Application of N,N‐bis(diphenylphosphino)aniline palladium(II) complexes as pre‐catalysts in Heck coupling reactions

Palladium(II) complexes with N,N‐bis(diphenylphosphino)aniline ligands catalyse the Heck reaction between styrene and aryl bromides, affording stilbenes in good yield. The structures of two of the complexes used as pre‐catalysts have been determined by single‐crystal X‐ray diffraction. Copyright © 2007 John Wiley & Sons, Ltd.     

A Numerical Calculation for Electron Impact Excitation of Copper

The scattering of electrons by atomic copper has been studied using Born approximation and the concept of the generalized oscillator strength (GOS). Differential and total cross-sections for the excitation of the 3d¹⁰ 4p² P state are calculated at incident energies of 100 eV and are compared with other available experimental and theoretical data. The agreement between our calculation for the differential cross-section and the available experimental results is fairly good at the forward angles, while the agreement at large angles is poor. The calculated total cross-sections are compared with the experimental data and those predicted by several theories. It is found that our calculation for the total cross-sections are in a good agreement with the close coupling calculation of Msezane and Henry (1986a, Physical Review A 33, 1631) for incident energies greater than 20 eV. The integrated cross-section measurements of Ismail and Teubner (1995, Journal of Physics B: Atomic, Molecular and Optical Physics 28, 4164) are in good agreement with the present calculation.     

Link budget analysis for multistandard receiver architectures

As devices shrink, creating integrated circuits (ICs) that work with the required accuracy becomes more difficult due to issues related to device physics. Receivers are part of an area referred to as "mixed-signal design," meaning that both analog and digital circuitry will be on the same IC. This too presents many challenging issues, as the analog circuitry is highly sensitive to disruptions caused by the noisy digital circuitry. Therefore, accurate modeling and simulation is crucial in the design of wireless receivers to ensure the best possible operation of the fabricated IC. Through simulation and modeling a designer can determine if receiver architecture will meet the required specifications and pinpoint the possible problems before valuable time is spent developing the actual circuit. This article will present design issues for multistandard wireless receivers to give the reader an understanding of the challenges involved in link-budget analysis. TITAN (Toolbox for Integrated Transceiver Analysis), a link-budget analysis tool developed at The Ohio State University Analog VLSI Laboratory, will be presented as an example of a tool for receiver simulation. To determine design performance, various requirements must be translated to model parameters. Among the requirements for receivers are noise floor (NF), second- and third-order distortion (IP2 and IP3, respectively), reciprocal mixing, and phase noise. TITAN offers a graphical interface and encapsulated models to the designer, eliminating the possibility of formula corruption. The interface provides a more intuitive and sophisticated way of setting up the simulation and provides the designer with more readable results. Additionally, a blocking profile component allows the architecture to be tested across multiple standards.     

Embedded diagonally implicit Runge–Kutta–Nystrom 4(3) pair for solving special second-order IVPs

In this paper, third-order 3-stage diagonally implicit Runge–Kutta–Nystrom method embedded in fourth-order 4-stage for solving special second-order initial value problems is constructed. The method has the property of minimized local truncation error as well as the last row of the coefficient matrix is equal to the vector output. The stability of the method is investigated and a standard set of test problems are tested upon and comparisons on the numerical results are made when the same set of test problems are reduced to first-order system and solved using existing Runge–Kutta method. The results clearly shown the advantage and the efficiency of the new method.     

Statistical modeling of device mismatch for analog MOS integratedcircuits

A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms     

Dynamics of Random One-Dimensional ±J Systems

Finite chains of a two-state random Potts spin model with periodic boundary conditions are studied within Glauber dynamics. The spin exchange is assumed random with frustration between ferro and antiferromagnetic values (±J). Time-dependent fluctuations are induced by periodic temperature oscillations. Master type differential equations for spin correlation functions are solved within linear response theory. The spectrum of relaxation times are calculated at different temperatures. The ±J Potts glass chains undergo a zero temperature phase transition. The barriers against inversion of the spin chain take only two values; 0 and 2|J|. The temperature behaviour of specific heat is characterized by rounded peaks. The frequency dependence displays two plateaus for the real part of specific heat and two corresponding peaks for the imaginary part. The dynamic specific heat is not affected by the longest relaxing mode like susceptibility. The time separation of the modes is demonstrated by the Cole-Cole plots.     

Tetradecanol dehydrogenation over CuO catalyst supported on BaO, CaO and MgO

Bimetallic Cu/Mg, Ca, Ba mixed oxide compounds acted as catalyst in the dehydrogenation of tetradecanol into tetradecanal, and were characterized by thermal gravimetric analysis, surface area, X-ray diffraction, temperature-programmed reduction and desorption of CO₂. Alkaline earth oxides increased the total basic site concentration in the order of Mg>Ca>Ba. A correlation was found between the total basic site concentration and initial dehydrogenation rate. This revised version was published online in June 2006 with corrections to the Cover Date.     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

CMOS scaling into the nanometer regime

Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling     

Kinetics of chlorine isotope exchange reaction between sodium chloride-36 and triphenyltin chloride in mixed solvents

Isotope exchange reaction between NaCl-36 and triphenyltin chloride in dioxane-water (8020% w/w) and ethanol-water (9010% w/w) mixed solvents has been studied at 25, 35 and 50 °C. The exchange reaction was found to proceed via a bimolecular S_N2, limiting mechanism with reaction rates depending on the solvent used. Inhibition of the exchange in ethanol-water is probably due to solvation of chloride ion through hydrogen bond formation. The rate laws for the exchange reactions are: R_e=3.24×10⁹ e^–65550/RT [Rh₃SnCl] [NaCl] in dioxanewater and R_e=6.61×10⁸ e^–69600/RT [Ph₃SnCl] [NaCl] in ethanol-water, where is the degree of dissociation of NaCl and R_e is the rate of exchange in mol l^–1 s^–1. The activation parameters H^*, S^* and G^* are reported.