Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained.     

Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2

We have developed a novel chemically amplified deep-UV photoresist called ARCH2. ARCH2 displays a resolution of<0.23μm with a DOF of 1.0μm at 0.25μm. This material also displays superior time delay stability (>8 hours). The post exposure bake (PEB) temperature was varied from 100°C to 120°C and the PEB time was varied from 60s to 180s. This had very little effect on the CD of the resist profiles. Preliminary etching experiments in a conventional reactive ion etcher were then carried out using CF₄ to etch TiN. In these experiments the ARCH2 etched at a similar rate as conventional Novolac.     

Cyclic voltammetric studies of certain industrially potential iron chelate catalysts

 For the analysis of infrared spectroscopic bands and complex patterns partial cross correlation functions of a sample spectrum with reference spectra are calculated. The chosen ranges of the spectra are based on empirical knowledge of infrared spectrum structure correlations. The normalised maxima of the partial cross correlation functions are interpreted as fuzzy truth values and are combined by fuzzy logical operators. By application of that procedure larger common substructures will be derived from the reference spectra than by a maximum common substructure search based on the complete spectra. Received: 30 October 1996/Revised: 24 February 1997/Accepted: 26 February 1997     

Resonance phenomena of π-mode forming in multi-element gratings

An analysis of resonances of scattering from multi-element grating formed by a finite number of resonant elements is presented. It has been shown that gratings with three and more elements on its period can support the π-mode. The π-mode of a grating is characterized by the existence of the regions in the vicinity of the grating and along its period where the electromagnetic field has opposite phases. The existence and excitation of the π-mode in finite gratings with resonant cells formed by several scatterers having open cavities have been studied. The particular case of the grating with cells formed by three identical slotted cylinders has been considered in detail. An application of gratings which support the π-mode in electron-vacuum oscillators of millimeter waves for efficient deceleration of electrons and extracting energy from electron beam is discussed.     

全球电信界的战略联盟

９０年代初，随着通信向全球化方向发展，发达国家各电信企业纷纷采用联盟的方式，相互联合，发挥各自优势，大举进军全球电信市场。面对这种联盟潮流，想要搭上全球通信的列车，发展中国家应该采取什么措施？坚持什么原则？本文作者对此进行了较深入的分析和研究，并对中国电信的发展提出了建议。     

MAURER-CARTAN EQUATION OF A_∞-ALGEBRAS

§ 0　IntroductionA∞ - algebras were first introduced and applied by Stasheff in [12 ,13].Recently,theyappeared in both mathematics and mathematical physics[1 ,5— 8,1 0 ] .An A∞ - algebra is a Z-graded vector space over a fixed field k with a sequence of graded maps mn∶ A n→ A ofdegree n- 2 (n≥ 1) satisfying certain axioms (see [5 ,6 ,12 ,13]) .In this paper,we focusour attentions on,as we call,the minimal A∞ - algebras,which are usual A∞ - algebrasdefined in [5 ,6 ,12 ,13]with m1 =…     

INVERSE EIGENVALUE PROBLEM OF HERMITIAN GENERALIZED ANTI-HAMILTONIAN MATRICES

§1　IntroductionWe considerthe following inverse eigenvalue problem offinding an n-by-n matrix A∈S such thatAxi =λixi,i =1,2 ,...,m,where S is a given set of n-by-n matrices,x1 ,...,xm(m≤n) are given n-vectors andλ1 ,...,λmare given constants.Let X=(x1 ,...,xm) ,Λ=(λ1 ,λ2 ,...,λm) ,then the above inverse eigenvalue problemcan be written as followsProblem Given X∈Cn×m,Λ=(λ1 ,...,λm) ,find A∈S such thatAX =XΛ,where S is a given matrix set.We also discuss the so-called opti…