High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Arc root mobility on piezoelectrically actuated contacts in miniature circuit breakers

A novel contact opening mechanism has been developed using a piezoelectric actuator to open the contacts in a low contact opening velocity circuit breaker. The arc control on the contacts is critical for successful current interruption (10/sup 3/-10/sup 4/ A) in low voltage (<250V) devices. Previous work has shown how arc root commutation from the contact region into the arc chamber is affected by arc chamber materials, contact materials and the gap behind the moving contact for contact velocities between 1ms/sup -1/ and 10ms/sup -1/. This work is extended using a commercially available piezoelectric actuator to open the contacts. Contact opening speeds are assessed and the arc root mobility is characterized under this operating regime. A flexible test apparatus and solid-state high-speed arc imaging system are used to gather data on the arc root during the opening of the contacts. New experimental results are presented on the anode and cathode root velocity and arc root motion in an arc chamber with piezoelectrically actuated contact opening. These results can be used to improve the design of high current low voltage circuit breakers suitable for piezoelectric actuation.     

A WKB analysis of the buckling condition for a cylindrical shell of arbitrary thickness subjected to an external pressure

We consider the plane-strain buckling of a cylindrical shellof arbitrary thickness which is made of a Varga material andis subjected to an external hydrostatic pressure on its outersurface. The WKB method is used to solve the eigenvalue problemthat results from the linear bifurcation analysis. We show thatthe circular cross-section buckles into a non-circular shapeat a value of µ₁ which depends on A₁/A₂ and a mode number,where A₁ and A₂ are the undeformed inner and outer radii, andµ₁ is the ratio of the deformed inner radius to A₁. Inthe large mode number limit, we find that the dependence ofµ₁ on A₁/A₂ has a boundary layer structure: it is constantover almost the entire region of 0 < A₁/A₂ < 1 and decreasessharply from this constant value to unity as A₁/A₂ tends tounity. Our asymptotic results for A₁ – 1 = O(1) and A₁– 1 = O(1/n) are shown to agree with the numerical resultsobtained by using the compound matrix method.     

A Recursive Frequency Estimator Using Linear Prediction and a Kalman-Filter-Based Iterative Algorithm

This paper proposes a new Kalman-filter-based recursive frequency estimator for discrete-time multicomponent sinusoidal signals whose frequencies may be time-varying. The frequency estimator is based on the linear prediction approach and it employs the Kalman filter to track the linear prediction coefficients (LPCs) recursively. Frequencies of the sinusoids can then be computed using the estimated LPCs. Due to the coloredness of the linear prediction error, an iterative algorithm is employed to estimate the covariance matrix of the prediction error and the LPCs alternately in the Kalman filter in order to improve the tracking performance. Simulation results show that the proposed Kalman-filter-based iterative frequency estimator can achieve better tracking results than the conventional recursive least-squares-based estimators.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

Modified Transition Matrix Simulations of Communication Systems

We apply appropriately enhanced transition matrix and multicanonical methods to communication systems. Our procedure not only predicts time-independent quantities such as the bit-error-probability but can also be applied to dynamic effects such as the distribution of fading times.     

Enhancing Chaotic Communication Performances by Manchester Coding

A numerical analysis of an optical chaotic transmission system, based on the synchronization of two chaotic lasers, in a master-slave closed loop configuration is presented. At the transmitter, the master chaotic wave is superposed on the information message; at the receiver, the message is recovered by subtracting the synchronized slave chaotic wave from the received signal. The performances are analyzed in terms of the Q-factor, considering two different message modulation formats: the nonreturn-to-zero and the Manchester coding. The Manchester coding shows enhanced performances due to the shift of the signal spectrum to higher frequencies.     

Potential applications of LF-noise spectroscopy to the development of new-generation gas sensors

The solution proposed relates to flicker-noise gas sensors under development, which differ from conventional chemical sensors in offering exceptional selectivity for the analysis of a gaseous environment. The classification and analytical justification are given of low-frequency-noise spectroscopy techniques and measures that are proposed for investigation of disordered semiconductors. The feasibility is shown of patterning processes for flicker-noise gas sensors. Some methods are proposed for these processes and for measurement procedures of gaseous-environment monitoring.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.