Bulk and shear mechanical loss of titania-doped tantala

We report on the mechanical loss from bulk and shear stresses in thin film, ion beam deposited, titania-doped tantala. The numerical values of these mechanical losses are necessary to fully calculate the Brownian thermal noise in precision optical cavities, including interferometric gravitational wave detectors like LIGO. We found the values from measuring the normal mode mechanical quality factors, Q's, in the frequency range of about 2000-10,000 Hz, of silica disks coated with titania-doped tantala coupled with calculating the elastic energy in shear and bulk stresses in the coating using a finite element model. We fit the results to both a frequency independent and frequency dependent model and find ${?}_{\mathrm{shear}}=(8.3\pm 1.1)\times {10}^{?4}$, ${?}_{\mathrm{bulk}}=(6.6\pm 3.8)\times {10}^{?4}$ with a frequency independent model and ${?}_{\mathrm{shear}}\left(f\right)=(5.0\pm 0.7)\times {10}^{?4}+(5.4\pm 1.1)\times {10}^{?8}f$, ${?}_{\mathrm{bulk}}\left(f\right)=(11\pm 2.8)\times {10}^{?4}?(8.7\pm 4.7)\times {10}^{?8}f$ with a frequency dependent (linear) model. The ratio of these values suggest that modest improvement in the coating thermal noise may be possible in future gravitational wave detector optics made with titania-doped tantala as the high index coating material by optimizing the coating design to take advantage of the two different mechanical loss angles.     

Quasi-1D Polymer Semiconductor–Diarylethene Blends: High Performance Optically Switchable Transistors

Optically switchable field-effect transistors (OSFETs) are non-volatile photonic memory devices holding a great potential for applications in optical information storage and telecommunications. Solution processing of blends of photochromic molecules and π-conjugated polymers is a low-cost protocol to integrate simultaneously optical switching and charge transport functions in large-area devices. However, the limited reversibility of the isomerization of photochromic molecules due to steric hindrance when embedded in ordered polymeric matrices represents a severe limitation and it obliges to incorporate as much as 20% in weight of the photochromic component, thereby drastically diluting the electronic function, limiting the device performance. Herein, a comparative study of the photoresponsivity of a suitably designed diarylethene molecule is reported when embedded in the matrix of six different polymer semiconductors displaying diverse charge transport properties. In particular, this study focuses on three semi-crystalline polymers and three quasi-1D polymers. It is found that 1% w/w of 1,2-bis(5-(3,5-di-tert-butylphenyl)-2-methylthiophen-3-yl)cyclopent-1-ene in a blend with poly(indacenodithiophene-co-benzothiadiazole) is sufficient to fabricate OSFETs combining photo-modulation efficiencies of 45.5%, mobilities >1 cm² V⁻¹s⁻¹, and photo-recovered efficiencies of 98.1%. These findings demonstrate that quasi-1D polymer semiconductors, because of their charge transport dominated by intra-molecular processes, epitomize the molecular design principles required for the fabrication of high-performance OSFETs.     

High Performing Solid-State Organic Electrochemical Transistors Enabled by Glycolated Polythiophene and Ion-Gel Electrolyte with a Wide Operation Temperature Range from −50 to 110 °C

The development of organic electrochemical transistors (OECTs) capable of maintaining their high amplification, fast transient speed, and operational stability in harsh environments will advance the growth of next-generation wearable and biological electronics. In this study, a high-performance solid-state OECT (SSOECT) is successfully demonstrated, showing a recorded high transconductance of 220 ± 59 S cm⁻¹, ultrafast device speed of ≈10 kHz with excellent operational stability over 10 000 switching cycles, and thermally stable under a wide temperature range from −50 to 110 °C. The developed SSOECTs are successfully used to detect low-amplitude physiological signals, showing a high signal-to-noise-ratio of 32.5 ± 2.1 dB. For the first time, the amplifying power of these SSOECTs is also retained and reliably shown to collect high-quality electrophysiological signals even under harsh temperatures (−50 and 110 °C). The demonstration of high-performing SSOECTs and its application in harsh environment are core steps toward their implementation in next-generation wearable electronics and bioelectronics.