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91.
Wideband chirp measurement technique for high bit rate sources 总被引:1,自引:0,他引:1
A Mach Zehnder (MZ) interferometer has been used as an optical discriminator to measure the time-resolved frequency chirp of an optical source 相似文献
92.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs) 相似文献
93.
H.-J. Sue E. I. Garcia-Meitin N. A. Orchard 《Journal of Polymer Science.Polymer Physics》1993,31(5):595-608
The fracture behavior of a core-shell rubber (CSR) modified epoxy is investigated using both fracture mechanics and microscopy tools. The CSR-modified epoxy is found to be toughened via numerous line-array cavitations of the CSR particles, followed by plastic flow of the epoxy matrix. The toughening effect via the above craze-like damage process is found to be as effective as that of the well-known widespread rubber cavitation/matrix shear yielding mechanisms. The conditions for triggering the craze-like damage appear to be both stress state and rubber concentration dependent. The type of rubber tougheners utilized also plays a critical role in triggering this rather unusual craze-like damage in epoxy systems. © 1993 John Wiley & Sons, Inc. 相似文献
94.
We characterize orbifolds in terms of their sheaves, and show that orbifolds correspond exactly to a specific class of smooth groupoids. As an application, we construct fibered products of orbifolds and prove a change-of-base formula for sheaf cohomology. 相似文献
95.
For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors 相似文献
96.
M. Trunk J. Popp I. Hartmann M. Lankers E. Urlaub W. Kiefer 《Fresenius' Journal of Analytical Chemistry》1996,355(3-4):354-356
In situ measurements of gas-liquid surface reactions of single aerosol microdroplets are presented. By means of optical levitation in combination with elastic (Mie) and inelastic (Raman) light scattering it is possible to get information on the chemistry of e.g. acid/base reactions as well as the physical behavior of single microparticles. 相似文献
97.
Arafa M. Fay P. Ismail K. Chu J.O. Meyerson B.S. Adesida I. 《Electron Device Letters, IEEE》1996,17(3):124-126
We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K 相似文献
98.
Li Z.-M. Landheer D. Veilleux M. Conn D.R. Surridge R. Xu J.M. McDonald R.I. 《Photonics Technology Letters, IEEE》1992,4(5):473-476
The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained 相似文献
99.
100.
Semi-empirical molecular orbital calculations were carried out for the compounds (C2H5)3As, (C2H5)3Ga and RAsH2 (R = C2H5, i-C3H7, i-C4H9, and t-C4H9) by using the CNDO/2-U program, and their capability of β-elimination reaction is compared on the basis of the torsion energy to the transition state, electrostatic interactions and orbital overlapping between the central atom and the β-hydrogen, and bond order of the metal-carbon, and carbon-hydrogen bond. In the comparison of (C2H5)3As with (C2H5)3Ga, we found that the β-elimination of (C2H5)3As could hardly be expected to take place in the thermal decomposition. The capability of β-elimination would be smaller in C2H5AsH2 than that in (C2H5)3As. Moreover when the ethyl group is replaced by a t-butyl group in RAsH2, the β-elimination reaction appears to become more difficult and a large possibility for a radical process is suggested. 相似文献