Potential applications of LF-noise spectroscopy to the development of new-generation gas sensors

The solution proposed relates to flicker-noise gas sensors under development, which differ from conventional chemical sensors in offering exceptional selectivity for the analysis of a gaseous environment. The classification and analytical justification are given of low-frequency-noise spectroscopy techniques and measures that are proposed for investigation of disordered semiconductors. The feasibility is shown of patterning processes for flicker-noise gas sensors. Some methods are proposed for these processes and for measurement procedures of gaseous-environment monitoring.     

Passively Q -switched Ytterbium-Doped Double-Clad Fiber Laser With a Cr4+:YAG Saturable Absorber

A high-power and high-repetition-rate passively Q -switched ytterbium-doped single-mode double-clad fiber laser was built using a Cr⁴⁺:YAG saturable absorber (SA). Two different SAs with initial transmissions of T_omicron = 30% and T_omicron = 50% were studied. At the maximum coupled pump power of 9.8 W, an output power of 4.7 W, pulse duration of 143 ns, pulse repetition rate of 253 KHz, pulse energy of 18.5 muJ, and slope efficiency of 49% were obtained with the T_omicron = 30% SA.     

Synthesis and characterization of a polyfluorene containing carbazole and oxadiazole dipolar pendent groups and its application to electroluminescent devices

We have synthesized a blue‐light‐emitting polyfluorene (PF) derivative ( PF‐CBZ‐OXD ) that presents bulky hole‐transporting carbazole and electron‐transporting oxadiazole pendent groups functionalized at the C‐9 positions of alternating fluorene units. The results from photoluminescence and electrochemical measurements indicate that both the side chains and the PF main chain retain their own electronic characteristics in the copolymer. An electroluminescent device incorporating this polymer as the emitting layer was turned on at 4.5 V; it exhibited a stable blue emission with a maximum external quantum efficiency of 1.1%. Moreover, we doped PF‐CBZ‐OXD and its analogue PF‐TPA‐OXD with a red‐light‐emitting iridium phosphor for use as components of phosphorescent red‐light emitters to investigate the effect of the host's HOMO energy level on the degree of charge trapping and on the electrophosphorescent efficiency. We found that spectral overlap and individual energy level matching between the host and guest were both crucial features affecting the performance of the electroluminescence devices. Atomic force microscopy measurements indicated that the dipolar nature of PF‐CBZ‐OXD , in contrast to the general nonpolarity of polydialkylfluorenes, provided a stabilizing environment that allowed homogeneous dispersion of the polar iridium triplet dopant. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2925–2937, 2007     

Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.     

Total classes of composition systems of discrete signals in isomorphous Galois fields

It is proposed a rule of total classes of composition systems of discrete frequency signals (CDF-signals) construction in extended Galois fields. It is carried out modeling and research a correlation properties of CDF-signals, and determined their practical attraction.     

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon

The results of the analysis of variations in the radiative recombination coefficient with varying doping level and concentration of excess electron-hole pairs are reported. It is shown that, along with the effect of narrowing of the band gap calculated in the many-electron approximation, the effect of screening of the Coulomb interaction responsible for the decrease in the excition binding energy should be taken into account. Both effects produce similar trends and decrease the radiative recombination coefficient with increasing levels of doping or injection. The contributions of excitonic radiative recombination and band-to-band radiative recombination to the total radiative recombination coefficient are separated from each other. It is shown that, in the region of room temperature, both contributions are comparable, while at liquid-nitrogen temperature, the excitonic component dominates over the band-to-band component. The results obtained by refined calculations of the limiting value of the internal quantum yield of electroluminescence for the silicon diodes and p-i-n structures are presented. It is shown that the internal quantum yield of electroluminescence can be as high as 14%. However, this values sharply decreases with increasing surface recombination rate and decreasing lifetime of excess charge carriers in the bulk.     

Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals

The results of the effect of ultrasonic treatment of ZnSe crystals on the structure of the energy spectrum of electronic states of centers with deep levels forming photoelectric and luminescent properties of this compound are presented. It is for the first time proved experimentally that the climb of edge dislocations under the effect of ultrasound leads to regrouping and generation of defects forming deep levels, which manifest themselves in phenomena of photosensitivity and radiative recombination.     

Book rewiev

Howard Anton and Robert C. Busby, John Wiley & Sons, Inc., 2002.     

Self‐assembly of amphiphilic tris(2,2′‐bipyridine)ruthenium‐cored star‐shaped polymers

Amphiphilic tris(2,2′‐bipyridine)ruthenium‐cored star‐shaped polymers consisting of one polystyrene block and two poly(N‐isopropylacrylamide) blocks were prepared by the “arm‐first” method in which RAFT polymerization and nonconvalent ligand–metal complexation were employed. The prepared amphiphilic star‐shaped metallopolymers are able to form micelles in water. The size and distribution of the micelles were studied by dynamic light scattering and transmission electron microscopy techniques. Preliminary studies indicate that the polymer concentration and the hydrophilic poly(N‐isopropylacrylamide) block length can affect the morphologies of the formed metal‐interfaced core–shell micelles in water. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 4204–4210, 2007