Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

Optical orientation of holes in strained nanostructures

A theory describing the optical orientation and Hanle effect for holes in quantum wells or quantum dots based on cubic semiconductors is developed. It is demonstrated that the presence of internal or external strain in quantum-confinement heterostructures leads to the dependence of the Hanle effect on the orientation of the magnetic field with respect to the heterostructure growth axis.     

Modified Transition Matrix Simulations of Communication Systems

We apply appropriately enhanced transition matrix and multicanonical methods to communication systems. Our procedure not only predicts time-independent quantities such as the bit-error-probability but can also be applied to dynamic effects such as the distribution of fading times.     

Enhancing Chaotic Communication Performances by Manchester Coding

A numerical analysis of an optical chaotic transmission system, based on the synchronization of two chaotic lasers, in a master-slave closed loop configuration is presented. At the transmitter, the master chaotic wave is superposed on the information message; at the receiver, the message is recovered by subtracting the synchronized slave chaotic wave from the received signal. The performances are analyzed in terms of the Q-factor, considering two different message modulation formats: the nonreturn-to-zero and the Manchester coding. The Manchester coding shows enhanced performances due to the shift of the signal spectrum to higher frequencies.     

Potential applications of LF-noise spectroscopy to the development of new-generation gas sensors

The solution proposed relates to flicker-noise gas sensors under development, which differ from conventional chemical sensors in offering exceptional selectivity for the analysis of a gaseous environment. The classification and analytical justification are given of low-frequency-noise spectroscopy techniques and measures that are proposed for investigation of disordered semiconductors. The feasibility is shown of patterning processes for flicker-noise gas sensors. Some methods are proposed for these processes and for measurement procedures of gaseous-environment monitoring.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Structure of solid monolayers and multilayers of n -hexane on graphite

We present all-atom molecular dynamics simulations ofn-hexane on the basal plane of graphite at monolayer and multilayer coverages. In keeping with experimental data, we find the presence of ordered adsorbed layers both at single monolayer coverage and when the adsorbed layer coexists with excess liquid adsorbate. Using a simulation method that does not impose any particular periodicity on the adsorbed layer, we quantitatively compare our results to the results of neutron diffraction experiments and find a structural transition from a uniaxially incommensurate lattice to a fully commensurate structure on increasing the coverage from a monolayer to a multilayer. The zig-zag backbone planes of all the alkane molecules lie parallel to the graphite surface at the multilayer coverage, while a few molecules are observed to attain the perpendicular orientation at monolayer coverage. Dedicated to Professor C N R Rao on his 70th birthday     

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

The effect of nonlinearity of the drift velocity of free charge carriers and the gradient-and concentration-related nonlinearities in the power-voltage sensitivity of a field-effect transistor with a short channel are studied theoretically. Theoretical results are compared with experimental data on the detection of terahertz radiation. It follows from the comparison that, in order to gain deeper insight into observed systematic features in the analysis of high-frequency characteristics of the transistor, one has to take into account some other mechanisms of the current nonlinearity, in addition to the plasma-related nonlinearity.