低价的市场竞争心理必须改变

概述了中国PCB产品必须走出低价的市场竞争的困境,坚决走自主创新来发展中国PCB工业的道路。     

城域网中光纤光缆的探讨

城域网的建设是今后光纤网络建设的一个热点，根据城域网的特点和系统技术要求选择光纤光缆是网络设计的重要组成部分。本根据城域网的特点和需求，对市场上现有的光纤光缆做了详细的分析和探讨，提出了城域网规划中光纤光缆选择的原则和具体的建议。     

Surface of Ru/Fe2O3 catalysts used in water-gas shift reaction studied by auger electron spectrometry

Summary Carbon deposits on the surface ofRu/Fe₂O₃ catalysts used in the water-gas shift reaction have been investigated by Auger Electron Spectrometry. A correlation has been found between the thickness of the carbon deposit and the catalytic activity in WGSR. The carbon deposit covers the metallic active centers and blocks their contact with reagents. The dotting of the iron oxide support with sodium has been found to reduce the amount of carbon deposit. .      

从做大到做强的主体是PCB企业（集团） 中国PCB工业如何从做大到做强!（6）

从做大到做强是中国PCB工业的唯一出路.而做强中国PCB工业的主体是中国的PCB企业(集团).只有大多数的中国PCB企业做大并做强了,中国PCB工业才能称得上是PCB强国.     

一种基于ECDSA的USB存储设备访问控制方案

文章针对使用USB存储设备造成的内部泄密问题,提出了一种USB存储设备访问控制方案,该方案对用户的身份认证基于安全强度很高的椭圆曲线数字签名算法,同时使用过滤器驱动程序实现了USB存储设备的读写控制,因而此方案具有较好的安全性、实用性和通用性。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

PCI接口芯片s5935及其应用

s5935是AMCC公司生产的PCI接口芯片 ,可实现直通 (PASS-THRU)、邮箱 (MAILBOX)、FI FO/DMA三种工作方式。文章简要介绍了这三种工作方式 ,并给出了s5935的WDM驱动编程。     

农村通信如何"突围"

农村通信作为农村地区信息化的基础，对于全面建设小康具有特殊的重要地位。介绍了我国农村通信的发展现状，分析了农村通信发展的困难压其原因，最后对农村压边远、欠发达地区通信的均衡震展提出了一些建议。     

Flash器件中氧化硅/氮化硅/氧化硅的特性

对普遍采用的氧化硅/氮化硅/氧化硅( ONO)三层复合结构介质层的制备工艺及特性进行了研究分析,研究了ONO的漏电特性以及顶氧( top oxide)和底氧( bottom oxide)的厚度对ONO层漏电的影响.结果表明,采用较薄的底氧和较厚的顶氧,既能保证较高的临界电场强度,又能获得较薄的等效氧化层厚度,提高耦合率,降低编程电压.     

Personal telecommunication radiation safety and the precautionary principle

The approach to risk management for RF and microwave radiation has been to establish guidelines for maximum permissible levels of exposure. These guidelines are based on evaluations of the relevant scientific literature and, with safety margins to account for uncertainties and gaps in scientific knowledge, offer a significant level of protection against established hazards of RF and microwave radiation for short-term exposures. One can argue, on this basis, that the precautionary principle - specifically, safety factors -have been used to guide the making and promulgation of existing permissible-exposure standards for RF and microwave radiation. Therefore, discussions on the appropriateness of the precautionary principle for RF radiation may be "much ado about nothing". Clearly, this approach to "pre caution" neither has stifled technological development, nor has it helped to enforce the acceptance of zero risk, but it provided a basis for action when science was unable to give a clear answer.