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11.
Padavattan Govindaswamy Patrick J. Carroll Yurij A. Mozharivskyj Mohan Rao Kollipara 《Journal of Chemical Sciences》2006,118(4):319-326
The reaction of [{(η5-C5Me5)M(μ-Cl)Cl}2] {where M = Rh (1), Ir (2)} with functionalized phosphine viz., diphenyl-2-pyridylphosphine (PPh2Py) in dichloromethane solvent yield neutral ϰ1-P-coordinated rhodium and iridium complexes [(η5-C5Me5)RhCl2(κ1-P-PPh2Py)]3 and [(η5-C5Me5) IrCl2(ϰ1-P-PPh2Py)]4. Reaction of complexes 1 and 2 with the ligand PPh2Py in methanol under reflux give bis-substituted complexes such as [(η5-C5Me5)RhCl(ϰ1-P-PPh2Py)2]+
5 and [(η5-C5Me5)IrCl(ϰ1-P-PPh2Py)2]+
6, whereas stirring in methanol at room temperature gives P-, N-chelating complexes of the type [(η5-C5Me5)RhCl(ϰ2-P-N-PPh2Py)]+ 7 and [(η5-C5Me5)IrCl(ϰ2-P-N-PPh2Py)]+
8. Neutral ϰ1-P-coordinated complexes [(η5-C5Me5)RhCl2(ϰ1-P-PPh2Py)]3 and [(η5-C5Me5)IrCl2(ϰ1-P-PPh2Py)]4 easily undergo conversion to the cationic P-, N-chelating complexes [(η5-C5Me5)RhCl(ϰ2-P-N-PPh2Py)]+
7 and [(η5-C5Me5) IrCl(ϰ2-P, N-PPh2Py)]+
8 on stirring in methanol at room temperature. These complexes are characterized by FT-IR and FT-NMR spectroscopy as well as
analytical methods. The molecular structures of the representative complexes [(η5-C5Me5)RhCl2(ϰ1-P-PPh2Py)]3, [(η5-C5Me5)IrCl2(ϰ1-P-PPh2Py)]4 and hexafluorophosphate salt of complex [(η5-C5Me5)IrCl(ϰ2-P-PPh2Py)2]+
6 are established by single-crystal X-ray diffraction methods 相似文献
12.
13.
Hao Wang Ying Lin Biao Chen 《Signal Processing, IEEE Transactions on》2003,51(10):2613-2623
We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms. 相似文献
14.
分析了韩国、日本及国内运营商手机游戏业务的发展状况.探讨了手机游戏业务的模式.论述了该业务的战略定位和市场前景。从地区提供给移动通信市场对外部环境、产业链的准备是否充分以及运营商内部的资源和运营状况等三个方面阐明了手机游戏业务发展的关键因素。 相似文献
15.
Javier Ramírez Antonio García Uwe Meyer-Bäse Fred Taylor Antonio Lloris 《The Journal of VLSI Signal Processing》2003,33(1-2):171-190
Currently there are design barriers inhibiting the implementation of high-precision digital signal processing (DSP) objects with field programmable logic (FPL) devices. This paper explores overcoming these barriers by fusing together the popular distributed arithmetic (DA) method with the residue number system (RNS) for use in FPL-centric designs. The new design paradigm is studied in the context of a high-performance filter bank and a discrete wavelet transform (DWT). The proposed design paradigm is facilitated by a new RNS accumulator structure based on a carry save adder (CSA). The reported methodology also introduces a polyphase filter structure that results in a reduced look-up table (LUT) budget. The 2C-DA and RNS-DA are compared, in the context of a FPL implementation strategy, using a discrete wavelet transform (DWT) filter bank as a common design theme. The results show that the RNS-DA, compared to a traditional 2C-DA design, enjoys a performance advantage that increases with precision (wordlength). 相似文献
16.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
17.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
18.
本文概述了离子注入过程中污染产生的原因和防止污染的措施,特别强调了对微粒污染和金属污染的防护以满足ULSI加工对离子注入的要求。 相似文献
19.
Min-Shiang Hwang Chih-Wei Lin Cheng-Chi Lee 《Electronics letters》2002,38(23):1429-1431
An authenticated multiple-key agreement protocol is proposed. The protocol is not only secure against the unknown-key attack but also more efficient than other protocols. 相似文献
20.
Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication 相似文献