2-D symmetry: theory and filter design applications

In this comprehensive review article, we present the theory of symmetry in two-dimensional (2-D) filter functions and in 2-D Fourier transforms. It is shown that when a filter frequency response possesses symmetry, the realization problem becomes relatively simple. Further, when the frequency response has no symmetry, there is a technique to decompose that frequency response into components each of which has the desired symmetry. This again reduces the complexity of two-dimensional filter design. A number of filter design examples are illustrated.     

High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-y/Ge/sub x/C/sub y/ base by UHV/CVD

Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si/sub 1-x-y/Ge/sub x/C/sub y/ layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Multipath structure for FSR expansion in waveguide-based optical ring resonator

A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator.     

Large deflection dynamics and control for planar continuum robots

This paper focuses on a class of robot manipulators termed "continuum" robots - robots that exhibit behavior similar to tentacles, trunks, and snakes. In previous work, we studied details of the mechanical design, kinematics, path-planning and small-deflection dynamics for continuum robots such as the Clemson "tentacle manipulator". In this paper, we discuss the dynamics of a planar continuum backbone section, incorporating a large-deflection dynamic model. Based on these dynamics, we formulate a vibration-damping setpoint controller, and include experimental results to illustrate the efficacy of the proposed controller.     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Tuning the Dimensions of C60‐Based Needlelike Crystals in Blended Thin Films

A new ordered structure of the C₆₀ derivative PCBM ([6‐6]‐phenyl C₆₁‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

A single-chip digitally calibrated 5.15-5.825-GHz 0.18-/spl mu/m CMOS transceiver for 802.11a wireless LAN

The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.