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131.
The influence of the charge of a metal cation and the nature of a coagulant on the recovery of butadiene-styrene rubber and properties of rubber stocks and vulcanizates was examined.  相似文献   
132.
A review of the experimental and theoretical studies of the crown ether complexes with polar molecules in their crystals, solutions, and in a gas phase is given. The type of the molecular bonds in the complexes, their stoichiometry, and the change in the macrocycle conformation during complex formation are considered, as well as the effect of the macrocycle structure and the nature of the medium on the efficiency of the molecular bonding. New data are given on the enthalpies of transfer of the crown ethers from tetrachloromethane into solvents capable of forming hydrogen bonds. The enthalpies of specific interactions of macrocycles with the molecules of the solvents in the medium of the same solvents are characterized. The conformations of the crown ethers in the media under study are discussed.  相似文献   
133.
We establish conditions for the existence and uniqueness of a solution of the inverse problem for a one-dimensional heat equation with unknown time-dependent leading coefficient in the case where a part of the boundary of the domain is unknown.  相似文献   
134.
An estimate of the remainder in the spectral decomposition of the generalized ζ function is given, which is more precise than the known ones. This paper is a continuation of a previous paper published in one of the preceding issues. Bibliography: 1 title. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 330, 2006, pp. 77–92.  相似文献   
135.
(Na, K)NbO3 crystals with a perovskite structure and a KNbO3 content up to 40 mol % were grown from flux with the use of the solvent NaBO2. The dielectric measurements of the crystals grown revealed phase transitions that had never been observed before in ceramic samples.  相似文献   
136.
137.
The article presents results of theoretical and experimental investigation of quasioptical multiplexer based on reflecting diffraction grating. Diffraction losses caused by reflection into mirror harmonic, and by angle divergence of wave beams are calculated. In an experimental multiplexer, wave beams with the frequencies 70 GHz and 79 GHz were mixed with power losses less than 1%.  相似文献   
138.
Multilayer ferromagnet-layered antiferromagnet (Fe/Cr) structures frustrated because of roughness of interlayer boundaries were studied by mathematical modeling methods. The phase diagram of a three-layer system (plotted as film thickness versus the degree of roughness of the interfaces) was obtained, and the order parameter distributions in each phase were determined. The character of phase transitions in this system was studied. The applicability range of the Slonczewski magnetic proximity model was determined.  相似文献   
139.
The authors consider the problem of detecting visual evoked potentials (VEP's). A matched subspace filter is applied to the detection of the VEP and is demonstrated to perform better than a number of other evoked potential detectors. Unlike single-harmonic detectors, the matched subspace filter (MSF) detector is suitable for detecting multiharmonic VEP's. Moreover, the MSF is optimal in the uniformly most powerful sense for multiharmonic signals with unknown noise variance  相似文献   
140.
The trade-off between threshold voltage (Vth) and the minimum gate length (Lmin) is discussed for optimizing the performance of buried channel PMOS transistors for low voltage/low power high-speed digital CMOS circuits. In a low supply voltage CMOS technology it is desirable to scale Vth and Lmin for improved circuit performance. However, these two parameters cannot be scaled independently due to the channel punch-through effect. Statistical process/device modeling, split lot experiments, circuit simulations, and measurements are performed to optimize the PMOS transistor current drive and CMOS circuit speed. We show that trading PMOS transistor Vth for a smaller Lmin results in faster circuits for low supply voltage (3.3 to 1.8 V) n+-polysilicon gate CMOS technology, Circuit simulation and measurements are performed in this study. Approximate empirical expressions are given for the optimum buried channel PMOS transistor V th for minimizing CMOS circuit speed for cases involving: (1) constant capacitive load and (2) load capacitance proportional to MOS gate capacitance. The results of the numerical exercise are applied to the centering of device parameters of a 0.5 μm 3.3 V CMOS technology that (a) matches the speed of our 0.5 μm 5 V CMOS technology, and (b) achieves good performance down to 1.8 V power supply. For this process the optimum PMOS transistor Vth (absolute value) is approximately 0.85-0.90 V  相似文献   
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