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101.
Broadband packet networks based on asynchronous transfer mode (ATM) are expected to provide a wide range of services, including motion video, voice, data and image. When these networks become prevalent, some applications such as motion video and high-speed LAN interconnections will place a very large bit rate requirement on the channels. Currently, the physical layer supported by the synchronous optical network (SONET) allows the transmission of up to 2.4 Gbit/s with the OC-48 optical interface. However, it is not feasible for the electronic packet switch to route packets at this rate on a single link. In this paper we present a design of a broadband packet switch that uses multiple links in parallel to realize a high-speed channel. This implementation permits the switch to operate at the lower link rate, which can be at 150 Mbit/s, while having the ability to support a virtual circuit at a higher rate (up to 2.4 Gbit/s). The main contribution of the design is that packet sequence on a channel is still maintained even though packets are allowed to use any of the links belonging to the same channel. Besides allowing the switch to function at a slower rate than the transmission channel rate, the implementation of the multilinks benefits from statistical multiplexing gain. Analytical results show the performance advantages of multilink design with respect to delay, throughput and packet loss probability. 相似文献
102.
Mary E. Neubert DAVID G. ABDALLAH Jr Sandra S. Keast Julie M. Kim Soonnam Lee Ryan M. Stayshich Margaret E. Walsh Rolfe G. Petschek Shin-Tson Wu 《Liquid crystals》2003,30(6):711-731
New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.
Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature. 相似文献
Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature. 相似文献
103.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
104.
Deale O.C. Ng K.T. Kim E.J. Lerman B.B. 《IEEE transactions on bio-medical engineering》1995,42(12):1208-1211
A high common mode voltage (Vcm) relative to earth ground is produced on the myocardium during the delivery of a defibrillator pulse and can generate a differential error signal when potential gradients are recorded with bipolar electrodes and isolation amplifiers. The error signal is proportional to Vcm, and therefore, a reduction in Vcm improves the accuracy of the potential gradient data. Experiments were conducted on 5 dogs to determine whether Vcm can be controlled using a bridge circuit. The bridge circuit consisted of a 5 kΩ power rheostat in parallel with the transthoracic resistance of the dog. The variable contact of the rheostat was connected to earth ground, and by adjusting the rheostat, Vcm on the myocardium could be varied. In each dog, 20 A shocks were delivered through stainless steel transthoracic electrodes. Point contact electrodes sutured to the epicardium were used to measure Vcm. It was determined that Vcm could be reduced to approximately zero at a given electrode on the heart. In addition, for the 5 dogs studied, the maximum measured Vcm on the heart was only 10% of the transthoracic voltage when the bridge circuit was balanced for an interior point in the heart 相似文献
105.
Joo-Wan Kim Byung Sung Kim Sangwook Nam Choong Woong Lee 《Antennas and Propagation, IEEE Transactions on》1996,44(7):996-999
To specify manufacturing tolerances of a reflector antenna, various errors such as random surface errors and misalignment errors must be considered at one time because superposition of the effects of those errors may not hold. Based on the Rahmat-Samii's formulation (1983), a method for computing efficiently the average power pattern of a reflector antenna with those errors is presented. Simulation results show that superposition of the effects of errors does not generally hold and demonstrate how those errors degrade the peak-gain and sidelobe levels 相似文献
106.
Young-Bae Seu Taeg-Kyeong Lim Chang-Jin Kim Sun-Chul Kang 《Tetrahedron: Asymmetry》1995,6(12):3009-3014
Optically active epoxy alcohol, (R)-2-butyryloxymethylglycidol3 which is the precursor of a tert-alcohol chiral building block was obtained in high enantiomeric purity, 98.7% e.e., by lipase-catalyzed asymmetric hydrolysis using a phosphate buffer and organic co-solvent system in 95% of chemical yield. 相似文献
107.
The chemical mechanism of the precipitation of lead titanium peroxohydroxide particles in a solution of nitrilotriacetate (NTA) complexes of lead and titanium peroxo-hydroxide is envisioned as the interaction between cations of lead hydroxide and anions of polymeric titanium peroxo-hydroxide. 相似文献
108.
Ha J.H. Kim S.W. Seol Y.S. Park H.K. Choi S.H. 《Semiconductor Manufacturing, IEEE Transactions on》1996,9(2):289-291
The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF 6/Ar mixtures. It was found that while the plug loading effect is independent of varying SF6/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology 相似文献
109.
Byeong Gi Lee Seok Chang Kim 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1995,83(10):1399-1428
This paper discusses recent advances in the theory and applications of scrambling techniques for digital lightwave transmission. It introduces the theories of sequence space and shift register generator (SRG) space which enable systematic analysis and mathematical manipulation of the behavior of sequences in general and the related SRG's. It discusses the behavior and realization of frame synchronous scrambling (FSS) and distributed sample scrambling (DSS) with emphasis on parallel sequences and the related parallel SRG's (PSRG). In addition, it describes self synchronous scrambling (SSS). Then the paper applies the theories to today's lightwave transmission systems by demonstrating practical parallel designs of FSS for SDH/SONET transmission, DSS for cell-based ATM transmission, and SSS for SDH-based ATM transmission. It finally considers how DSS can be used for scrambling of mixed isochronous and nonisochronous data in future high-speed data networks. The paper employs various new concepts and terminology, such as PSRG engine, generating vector discrimination matrix, (M,N) PSRG, sampling vector, correction vector, correction matrix, predictable scrambling concurrent sampling, and immediate correction 相似文献
110.
Sungwon Kim Zuo Wang Hagan D.J. Van Stryland E.W. Kobyakov A. Lederer F. Assanto G. 《Quantum Electronics, IEEE Journal of》1998,34(4):666-672
We demonstrate and compare two phase-insensitive all-optical transistors (AOT's) based on frequency-degenerate quadratic three-wave interactions. In particular, we demonstrate gain using KTP in a type II geometry. Both AOT's exploit the phase insensitivity inherent to three-wave parametric processes when only two fields are input, providing amplification of a small signal at the operating frequency via the interaction with a second-harmonic wave. The first scheme is based on successive up- and down-conversion (i.e., cascading) while the second relies on parametric down-conversion. We obtain gains of 5 and 160 in the two configurations, respectively, with a significant background and output coherent to the pump in the first case, no background and coherence between output and signal in the second 相似文献