Generalized 3G theorem and application to relativistic stable process on non-smooth open sets

Let G(x,y) and GD(x,y) be the Green functions of rotationally invariant symmetric α-stable process in Rd and in an open set D, respectively, where 0<α<2. The inequality GD(x,y)GD(y,z)/GD(x,z)?c(G(x,y)+G(y,z)) is a very useful tool in studying (local) Schrödinger operators. When the above inequality is true with c=c(D)∈(0,∞), then we say that the 3G theorem holds in D. In this paper, we establish a generalized version of 3G theorem when D is a bounded κ-fat open set, which includes a bounded John domain. The 3G we consider is of the form GD(x,y)GD(z,w)/GD(x,w), where y may be different from z. When y=z, we recover the usual 3G. The 3G form GD(x,y)GD(z,w)/GD(x,w) appears in non-local Schrödinger operator theory. Using our generalized 3G theorem, we give a concrete class of functions belonging to the non-local Kato class, introduced by Chen and Song, on κ-fat open sets. As an application, we discuss relativistic α-stable processes (relativistic Hamiltonian when α=1) in κ-fat open sets. We identify the Martin boundary and the minimal Martin boundary with the Euclidean boundary for relativistic α-stable processes in κ-fat open sets. Furthermore, we show that relative Fatou type theorem is true for relativistic stable processes in κ-fat open sets. The main results of this paper hold for a large class of symmetric Markov processes, as are illustrated in the last section of this paper. We also discuss the generalized 3G theorem for a large class of symmetric stable Lévy processes.     

The study of exchange coupling in NiFe/Cu/IrMn trilayer structures by MOKE and FMR measurements

The exchange coupling strength of NiFe/Cu/IrMn trilayer films was examined with both a new magneto optical Kerr effect (MOKE) method developed for the exchange coupling field determination and ferromagnetic resonance (FMR) measurements. We found that the value for exchange coupling field obtained by the MOKE technique coincided with FMR result with high accuracy. Other peculiarities of FMR measurements due to interlayer exchange coupling such as angular dependence of resonance field on Cu spacer thickness are also shown in the article.     

Tail asymptotics for the fundamental period in the MAP/G/1 queue

This paper studies the tail behavior of the fundamental period in the MAP/G/1 queue. We prove that if the service time distribution has a regularly varying tail, then the fundamental period distribution in the MAP/G/1 queue has also regularly varying tail, and vice versa, by finding an explicit expression for the asymptotics of the tail of the fundamental period in terms of the tail of the service time distribution. Our main result with the matrix analytic proof is a natural extension of the result in (de Meyer and Teugels, J. Appl. Probab. 17: 802–813, 1980) on the M/G/1 queue where techniques rely heavily on analytic expressions of relevant functions. I.-S. Wee’s research was supported by the Korea Research Foundation Grant KRF 2003-070-00008.     

High power single-frequency continuous-wave Nd:YVO4 master-oscillator power amplifier

We report a highly-efficient, high-power, single-frequency Nd:YVO₄ master-oscillator power-amplifier with near-diffraction-limited output beam quality. A diode-pumped Nd:YVO₄ ring laser incorporating a passive method for suppressing axial-mode-hopping was employed as the master-oscillator, and was amplified by a three-stage diode-end-pumped Nd:YVO₄ amplifier, yielding 79 W of output with an extraction efficiency of 29%. The overall power gain was 15 dB for an input power from the master-oscillator of 2.4 W, and the M² parameter was less than 1.5 at the maximum power. The prospects for a further increase of power and brightness via this approach are considered. PACS 42.55.Xi; 42.60.Da; 42.60.Jf     

The effect of surface crystalline layers on asymmetric off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons

The off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons was measured using a pick-up coil wound around the sample. One side of a ribbon was etched in hydrofluoric acid solution during various times in order to change the thickness of the surface crystalline layer appearing after annealing. The asymmetric two-peak field dependence of the off-diagonal impedance was observed for all samples. The evolution of the off-diagonal magnetoimpedance with the change in the ribbon thickness is analyzed.     

A Reverse of bessel’s inequality in 2-inner product spaces and some grüss type related results with applications

A reverse of Bessel’s inequality in 2-inner product spaces and companions of Grüss inequality with applications for determinantal integral inequalities are given.     

Photoemission studies of oxygen adsorbed on a LiAl(1 1 0) alloy surface: Role of Li segregation

We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlO_x and Li₂O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O₂ exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

A new resource allocation scheme based on a PSNR criterion forwireless video transmission to stationary receivers over Gaussianchannels

A new resource allocation scheme is proposed for video service over a Gaussian channel. For video quality rating, we introduce a suitable metric: the average peak signal-to-noise ratio (PSNR) or the average channel-induced PSNR degradation. Then, we model the end-to-end distortion considering the error propagation effect caused by motion compensation. On the basis of this model, we propose an efficient resource allocation scheme for real video service. Unlike conventional schemes, the new scheme satisfies the PSNR requirement of each video user by adjusting the bit-error rate level with the changes of image characteristics. Simulation results show that the proposed scheme utilizes the bandwidth more efficiently than conventional schemes     

Noise bandwidth suppression for low noise readout circuit

A new noise reduction circuit that suppresses noise bandwidth of the output stage is proposed for the readout circuit of an infrared detector operating at a high pixel rate. Using this circuit, it is found that the rms noise voltage of the output stage is effectively reduced from 87 to 52 μV at a pixel rate of 10 pixel/μs