Ohmic contact and transport properties of II–VI Green/Blue laser diodes

The employment of the Zn(Se,Te) pseudo-graded contacting scheme to p-type ZnSe-based alloys contributes directly to the recent demonstration of room temperature continuous-wave operation of II– VI green-blue laser diodes. Contact ohmicity is maintained down to cryogenic temperatures which enabled the investigation of electrical transport properties associated with the p-type nitrogen-doped ZnSe, Zn(S,Se), and (Zn,Mg)(S,Se). The observation of both persistent photoconductivity and a metastable population of holes which are in thermodynamic equilibrium with hydrogenic acceptors having reduced activation energy suggests the presence of a DX-like behavior for holes in p-type (Zn,Mg)(S,Se).     

Delayed self-heterodyne linewidth measurement of VCSELs

We report on high-resolution linewidth measurements of proton-implanted InGaAs-GaAs VCSELs employing the delayed self-heterodyne method. Devices with 16-/spl mu/m active diameter exhibit record low linewidths of 20 MHz and 4-MHz residual linewidth. The linewidth enhancement factor is accurately determined from the ratio of induced phase to amplitude modulation indexes.