Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.     

Active long pulse shaping technique of pulsed CO2 laser using multi-pulse discharge control

We describe the pulse forming of pulsed CO₂ laser using multi-pulse superposition technique. Various pulse shapes, high duty cycle pulse forming network (PFN) are constructed by time sequence. This study shows a technology that makes it possible to make various long pulse shapes by activating SCRs of three PFN modules consecutively at a desirable delay time with the aid of a PIC one-chip microprocessor. The power supply for this experiment consists of three PFN modules. Each PFN module uses a capacitor, a pulse forming inductor, a SCR, a high voltage pulse transformer, and a bridge rectifier on each transformer secondary. The PFN modules operate at low voltage by driving the primary of HV pulse transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence.We investigated various long pulse shapes as different trigger time intervals of SCRs among three PFN modules. As a result, we could obtain laser beam with various pulse shapes and durations from about 250 to 1000 μs.     

Highly Efficient Orange and Green Solid‐State Light‐Emitting Electrochemical Cells Based on Cationic IrIII Complexes with Enhanced Steric Hindrance

Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂ sb]PF₆ in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W^–1) at 2.5 V, and 7.1 % and 26.2 lm W^–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells.     

Waveband-switchable SOA ring laser constructed with a phase modulator loop mirror filter

An electrically tunable multiwavelength source has been developed using a birefringence-based optical comb filter in a semiconductor optical amplifier ring laser. The filter is constructed with an electrooptic phase modulator placed inside a fiber loop mirror. By controlling the birefringence of the modulator through the applied bias, the radio-frequency power, or the modulation frequency, we achieve a continuous shift of the spectral comb to access different interleaved wavebands. Electrical waveband switching has been successfully demonstrated for 21 wavelengths at 100-GHz grid spacing with an optical signal-to-noise ratio over 40 dB.     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.     

Efficient microwave induced direct α-halogenation of carbonyl compounds

A novel and direct method for the synthesis of α-halocarbonyl compounds using sequential treatment of carbonyl compounds with [hydroxy(tosyloxy)iodo]benzene followed by magnesium halides under solvent-free microwave irradiation conditions is described.     

Algebraic decoding of (103, 52, 19) and (113, 57, 15) quadratic residue codes

In this paper, two algebraic decoders for the (103, 52, 19) and (113, 57, 15) quadratic residue codes, which have lengths greater than 100, are presented. The results have been verified by software simulation that programs in C++ language have been executed to check possible error patterns of both quadratic residue codes.     

Reliability and wireability optimizations for chip placement on multichip modules

The chip placement problem of multichip module (MCM) designs is to map the chips properly to the chip sites on the MCM substrate. Chip placement affects not only the thermal characteristics of an MCM but also routing efficiency, which translates directly into manufacturability, performance, and cost. This paper presents a solution methodology for the optimal placement problem considering both thermal and routing design objectives simultaneously. The coupling is achieved through use of a hybrid-force model that is a combination of the traditional interconnection-force model and a novel thermal-force model. The placement procedure can be used as a design tool to place chips and then determine the tradeoffs which can be made in placing for reliability and wireability. Experiments on five examples including three benchmarks show that the present algorithm yields very high-quality results.