Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

高职高专电工学课程教学改革

针对高职高专培养应用型人才的要求，分析了目前电工学课程教学的现状，提出了电工学课程改革方案。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.     

Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.     

Winograd矩阵乘法算法用于任意阶矩阵时的一种新处理方法

摘要t矩阵乘法StraSsen算法及其变形winograd算法用分而治之的方法把矩阵乘法时间复杂性由传统的D(n。)改进到0(佗kg。n.但是对于奇数阶矩阵,在划分子矩阵时,要作特殊处理才能继续使用此算法.本文提出了一种非等阶“十”字架划分方法,可以最少化填零,最大化性能,使得奇数阶矩阵乘法的时间复杂性更加接近偶数阶矩阵乘法的效果.计算实例显示该方法是有效的.     

Difference in micellar properties of sodium dodecyl sulfonate from sodium 4-decyl naphthalene sulfonate in D2O solution studied by 1H NMR relaxation and 2D NOESY

¹H chemical shift changes of sodium 4-decyl naphthalene sulfonate (SDNS) at 313 K show that its critical micellar concentration lies between 0.82 and 0.92 mmol/dm³, which is in the same range as that of the previous study at 298 K. The spin–lattice relaxation time, spin–spin relaxation time and two-dimensional nuclear Overhauser enhancement spectroscopy experiments give information about the structure of the SDNS micelle and the dynamics of the molecules in the micelle. The size of the SDNS micelle remains almost unchanged in the temperature range from 298 to 313 K as deduced by analyzing the self-diffusion coefficient. Special arrangement of the naphthyl rings of SDNS in the micelles affects the packing of these hydrophobic chains. The methylene groups of the alkyl chain nearest the naphthalene groups penetrate into the aromatic region, which results in a more tightly packed hydrophobic micellar core than that of sodium dodecyl sulfonate.     

CreditRisk+模型下商业银行经济资本配置研究

对金融资产风险的度量与经济资本的分配应该体现分散化效应,传统的V aR方式不能保证分散化效应的次可加性.本文讨论了基于T a ilV aR这一新的风险度量与经济资本分配标准,并在违约率均值不变情况下,对C red itR isk+模型下的商业银行经济资本分配进行了实证分析.     

Power scaling of printed-circuit-board preionized TEA CO2 laser up to 3.6 kW

A high average power, high-repetition-rate TEA CO₂ laser employing printed-circuit-board preionizer is described. The power scaling of this preionization configuration has been demonstrated. The average output power reaches 3.6 kW at pulse repetition rate of 180 pps. Furthermore, the scaling-up ability of the rotating spark gap as high-voltage switch for high-average-power gas laser has been validated.     

电源最大输出功率的条件及公式的应用

当外电路的电阻等于电源内电阻时,电源输出功率最大,应用这个结论,可以省去许多计算步骤.但实际应用时还要注意一些问题,下面从几个方面加以讨论.1 电源实际输出功率与最大输出功率的区别 这是两个不同的概念,一些学生往往会用Pm=(?)/4r计算电源输出最大功率,其实,(?)/4r只是电源输出功率的极限,电源一般不在该状态下工作.