R~(2,1)中线性Weingarten曲面的Bcklund变换(英文)

本文对三维Minkowski空间R~(2,1)中具有性质K-2mH+m~2-l~2=0或H=constant的类时曲面定义了一个Darboux线汇,同时得到了相应的Bcklund变换。     

Dupin hypersurfaces with four principal Curvatures,II

If M is an isoparametric hypersurface in a sphere S ⁿ with four distinct principal curvatures, then the principal curvatures κ₁, . . . , κ₄ can be ordered so that their multiplicities satisfy m ₁ = m ₂ and m ₃ = m ₄, and the cross-ratio r of the principal curvatures (the Lie curvature) equals −1. In this paper, we prove that if M is an irreducible connected proper Dupin hypersurface in R ⁿ (or S ⁿ ) with four distinct principal curvatures with multiplicities m ₁ = m ₂ ≥ 1 and m ₃ = m ₄ = 1, and constant Lie curvature r = −1, then M is equivalent by Lie sphere transformation to an isoparametric hypersurface in a sphere. This result remains true if the assumption of irreducibility is replaced by compactness and r is merely assumed to be constant.      

Viscometric properties of dilute polystyrene/dioctyl phthalate solutions

We report viscometric data collected in a Couette rheometry on dilute, single‐solvent polystyrene (PS)/dioctyl phthalate (DOP) solutions over a variety of polymer molecular weights (5.5 × 10⁵ ≤ M_w ≤ 3.0 × 10⁶ Da) and system temperatures (288 K ≤ T ≤ 318 K). In view of the essential viscometric features, the current data may be classified into three categories: The first concerns all the investigated solutions at low shear rates, where the solution properties are found to agree excellently with the Zimm model predictions. The second includes all sample solutions, except for high‐molecular‐weight PS samples (M_w ≥ 2.0 × 10⁶ Da), where excellent time–temperature superposition is observed for the steady‐state polymer viscosity at constant polymer molecular weights. No similar superposition applies at a constant temperature but varied polymer molecular weights, however. The third appears to be characteristic of dilute high‐molecular‐weight polymer solutions, for which the effects of temperature on the viscosity curve are further complicated at high shear rates. The implications concerning the relative importance of hydrodynamic interactions, segmental interactions, and chain extensibility with increasing polymer molecular weight, system temperature, and shear rate are discussed. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 787–794, 2006     

Economic analysis and optimization of tool portfolio in semiconductor manufacturing

The tool portfolio of a plant refers to the makeup, in quantity and type, of processing machines in the plant. It is determined by taking into consideration the future trends of process and machine technologies and the forecasts of product evolution and product demands. Portfolio planning is also a multicriteria decision-making task involving tradeoffs among, investment cost, throughput, cycle time, and risk. Tool portfolio planning is a complex task that has strong bearing on manufacturing efficiency. In the first part of this paper, a multicriteria economic decision model is presented for optimal configuration. of the portfolio and to determine the optimal factory loading. The second and third parts of the paper contain applications of the model. If plants are closely located or have a twin-plant design, portfolio planning at multiple plants can be integrated to enhance the overall effectiveness of portfolios. In the second part, a novel methodology for arbitrating capacity backup between plants is described. Because the economic model is constructed upon a valuation of both cycle time and throughput, it is a suitable method for the evaluation of cycle time reduction projects. The application procedure is outlined in the third part.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

燃煤循环流化床燃烧脱硫的模型预测

燃煤循环流化床燃烧脱硫的模型预测池涌，岑可法，倪明江Ｐ·Ｂａｓｕ（浙江大学能源系杭州３１００２７）关键词：循环流化床，燃烧，脱硫，模型预测一、引言循环流化床锅炉在过去十几年中得到了广泛的应用，但与此同时由于循环流化床内流体动力特性的高度复杂使得数学模...     

Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis

The stress buffer layer (SBL) is a widely applied improvement in many advanced packages used to release the stress concentration at solder joints. However, it has been generally found that the metal line adjacent to the SBL may suffer larger deformation and its reliability should be addressed. In this study, the panel level package (PLP) technology with solder on polymer (SOP) structure is selected as the testing sample to investigate the effect of SBL. The ball shear strength test is conducted first to investigate the reliability of metal trace in PLP. In addition, finite element (FE) analysis is applied to understand the actual thermo-mechanical behavior of PLP after its assembly. The package-level and board-level reliability assessments are compared, and the suggested layout of the redistribution layer on the SBL is provided herein.     

短毫米波和亚毫米波接收机的发展现状

本文概述了短毫米和亚毫米波接收机的发展现状，介绍了接收机的重要组成部件：混频器、振荡器和放大器的发展水平以及毫米波单片集成电路的现状，给出了接收机的最新性能指标。     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

新型处理药剂（EP-110）处理各种重金属离子的实验研究

各行各业生产过程中会产生大量废水,重金属离子污染物是其中的重要控制指标,传统的处理方法不能完全解 决这类污染。本文通过大量的实验数据,对新型的处理药剂(EP-110)处理各种重金属离子的性能做了全面的测试、分析,并 提出了使用方法。