全文获取类型
收费全文 | 6418篇 |
免费 | 467篇 |
国内免费 | 29篇 |
专业分类
化学 | 3942篇 |
晶体学 | 46篇 |
力学 | 71篇 |
数学 | 400篇 |
物理学 | 933篇 |
无线电 | 1522篇 |
出版年
2023年 | 87篇 |
2022年 | 93篇 |
2021年 | 157篇 |
2020年 | 136篇 |
2019年 | 150篇 |
2018年 | 125篇 |
2017年 | 126篇 |
2016年 | 243篇 |
2015年 | 208篇 |
2014年 | 238篇 |
2013年 | 410篇 |
2012年 | 426篇 |
2011年 | 515篇 |
2010年 | 319篇 |
2009年 | 348篇 |
2008年 | 444篇 |
2007年 | 357篇 |
2006年 | 342篇 |
2005年 | 292篇 |
2004年 | 266篇 |
2003年 | 222篇 |
2002年 | 250篇 |
2001年 | 132篇 |
2000年 | 129篇 |
1999年 | 90篇 |
1998年 | 67篇 |
1997年 | 78篇 |
1996年 | 63篇 |
1995年 | 44篇 |
1994年 | 38篇 |
1993年 | 36篇 |
1992年 | 49篇 |
1991年 | 24篇 |
1990年 | 37篇 |
1989年 | 33篇 |
1988年 | 16篇 |
1987年 | 18篇 |
1986年 | 15篇 |
1985年 | 28篇 |
1984年 | 23篇 |
1983年 | 16篇 |
1982年 | 18篇 |
1981年 | 11篇 |
1980年 | 13篇 |
1979年 | 12篇 |
1978年 | 15篇 |
1977年 | 19篇 |
1976年 | 12篇 |
1975年 | 11篇 |
1970年 | 17篇 |
排序方式: 共有6914条查询结果,搜索用时 15 毫秒
891.
柔性有源OLED显示器制造几点技术方面的考虑 总被引:2,自引:0,他引:2
Juhn S. Yoo Nackbong Choi Yong-Chul Kim In-Hwan Kim Seung-Chan Byun Sang-Hoon Jung Jong-Moo Kim Soo-Young Yoon Chang-Dong Kim In-Byeong Kang In-Jae Chung 代永平 《现代显示》2009,20(2):21-24
AMOLED在柔性显示领域前途似锦。LG显示展示了一款全彩4in柔性AMOLED样机,衬底为80μm厚的不锈钢薄片,曲率达到5cm弯曲半径。本文就此项柔性显示技术所面临的挑战进行了探讨.包括柔性衬底衬底的传送、如何获得特性稳定可靠的TFT以使OLED的亮度和一致性适用于此项技术的商业化推广。 相似文献
892.
Seung-Jo Jung 《Journal of Pure and Applied Algebra》2018,222(7):1579-1605
893.
Nanoelectromechanical resonators are promising high-sensitivity sensors for force, charge and mass detection. Presented is a dynamic stress-sensing technique using nano-scale suspended beams. Using magnetomotive transduction, the effective dynamic stress was measured on the beam from the resonance frequency at room temperature under a moderate vacuum. The sensitivity of the nano-scale resonator varied less than 1%, while its signal-to-noise ratio was reduced by about 30% in a muW electrothermal power range. 相似文献
894.
Man Chang Tae-Wook Kim Joonmyoung Lee Minseok Jo Seonghyun Kim Seungjae Jung Hyejung Choi Takhee Lee Hyunsang Hwang 《Microelectronic Engineering》2009,86(7-9):1804-1806
We investigated the impact of charge injection and metal gates (Al and Pt) on the data retention characteristics of metal–alumina–nitride–oxide–silicon (MANOS) devices for NAND flash memory application. Through the theoretical and experimental results, the highly injected charge (ΔVTH) could cause the band bending of Al2O3, which reduced the tunneling distance across Al2O3. Thus, the dominant charge loss path is not only toward SiO2 but also toward Al2O3 direction. Compared to low-metal work function (ФM), ONA stack with high-ФM showed better data retention characteristics, even if ΔVTH is high. This could be explained by Fermi level alignment for different ФM, which results in the reduction of electric field across the Al2O3 compensated by the ΔФM (ФPt ? ФAl). 相似文献
895.
Ja-Young Jung Shin-Bok Lee Ho-Young Lee Young-Chang Joo Young-Bae Park 《Journal of Electronic Materials》2009,38(5):691-699
Anodic dissolution and the electrochemical migration characteristics of eutectic Sn-Pb solder alloy in deaerated 0.001% NaCl
and Na2SO4 solutions were investigated using anodic polarization and water drop tests. Anodic polarization results revealed that a Pb-rich
phase was preferentially ionized in deaerated 0.001% NaCl solution and an Sn-rich phase was predominantly ionized in deaerated
0.001% Na2SO4 solution, which coincides well with the composition of the dendrites formed during water drop tests. X-ray diffraction and
photoelectron spectroscopy results showed that the surface oxide film formed on pure Sn in deaerated 0.001% NaCl solution
is more stable than that formed on pure Sn in deaerated 0.001% Na2SO4 solution. The surface oxide film formed on pure Pb in deaerated 0.001% Na2SO4 solution is more stable than that formed on pure Sn in deaerated 0.001% NaCl solution. Therefore, the quality of the surface
film of eutectic Sn-Pb solder in a chemical environment seems to be critical not only for corrosion resistance, but also for
electrochemical migration resistance. 相似文献
896.
Jaesik Yoon Hyejung Choi Dongsoo Lee Ju-Bong Park Joonmyoung Lee Dong-Jun Seong Yongkyu Ju Man Chang Seungjae Jung Hyunsang Hwang 《Electron Device Letters, IEEE》2009,30(5):457-459
We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 104 cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer. 相似文献
897.
Problem solving has long been a priority in mathematics education, and the first Common Core mathematical practice (SMP1) focuses on this priority through the language of “Make sense of problems and persevere in solving them.” We present findings from a survey about how prospective elementary teachers' (PTs) make sense of potential difficulties with fostering SMP1. Findings suggested that PTs' common anticipated difficulties relate to planning a solution pathway and self monitoring whether the solution makes sense. Moreover, a third of PTs disclosed that their anticipated difficulties are linked to their own personal struggles with aspects of SMP1. An alternative interpretation of SMP1 surfaced in which a small number of PTs described SMP1 as necessitating that a teacher teach multiple solution methods to students, instead of engaging students in productive struggle to develop their own strategies. We present a framework illustrating the connections between SMP 1 and Pólya's problem solving phases, and we discuss how these findings connect to and build on previous research of PTs' experiences with problem solving. We offer implications for the targeted support needed in teacher preparation programs to address these struggles, to prevent them from being replicated in their students. 相似文献
898.
Kyung-Hoon Lim Gunhyun Ahn Sungchan Jung Hyun-Chul Park Min-Su Kim Ju-Ho Van Hanjin Cho Jong-Hyuk Jeong Cheon-Seok Park Youngoo Yang 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2009,56(4):265-269
In this brief, we present a 60-W power amplifier that is linearized using an RF predistorter for multicarrier wideband code-division multiple-access (WCDMA) applications. The proposed RF predistorter is fully composed of RF or analog circuits, and it has a moderate memory effect compensation capability using a delayed third-order intermodulation (IM3) component path. It also includes the IM5 generation circuits and a compact IM3 generator that is capable of autocanceling for the fundamental component. The proposed RF predistorter was implemented and applied to a 60-W high-power WCDMA amplifier. For a four-carrier downlink WCDMA signal, the RF predistorter improved the adjacent channel leakage power ratio at a 5-MHz offset by 6.19 dB at an average output power of 48 dBm. The total efficiency of the system is as high as 13.6% at the same output power level. At an output power level of 60 W, the linearized power amplifier complies with the linearity specification of the WCDMA system. 相似文献
899.
Jung Joo Park Tae Jin Park Woo Sik Jeon Ramchandra Pode Jin Jang Jang Hyuk Kwon Eun-Sun Yu Mi-Young Chae 《Organic Electronics》2009,10(1):189-193
Using a 4,4′,4′′-tris(N-carbazolyl)-triphenylamine (TCTA) small molecule interlayer, we have fabricated efficient green phosphorescent organic light emitting devices by solution process. Significantly a low driving voltage of 3.0 V to reach a luminance of 1000 cd/m2 is reported in this device. The maximum current and power efficiency values of 27.2 cd/A and 17.8 lm/W with TCTA interlayer (thickness 30 nm) and 33.7 cd/A and 19.6 lm/W with 40 nm thick interlayer are demonstrated, respectively. Results reveal a way to fabricate the phosphorescent organic light emitting device using TCTA small molecule interlayer by solution process, promising for efficient and simple manufacturing. 相似文献
900.
This paper demonstrates the effects of the imidization ratio of polyimide gate insulators on the performance of organic thin-film transistors (OTFTs). We report the synthetic results of polyimide films imidized at a temperature of 200 °C along with an easily removed organic base catalyst (1,8-diazabicyclo[5.4.0]undec-7-ene, DBU), and their application in gate insulators of organic thin-film transistors. The degree of imidization increased to almost 100% after a thermal treatment at 200 °C for 40 min in the presence of DBU. The performance of the pentacene OTFT dramatically improved by using low temperature cured polyimide film as the gate insulator. 相似文献