A numerical study of an unsteady laminar flow in a doubly constricted 3D vessel

Unsteady flow dynamics in doubly constricted 3D vessels have been investigated under pulsatile flow conditions for a full cycle of period T. The coupled non‐linear partial differential equations governing the mass and momentum of a viscous incompressible fluid has been numerically analyzed by a time accurate Finite Volume Scheme in an implicit Euler time marching setting. Roe's flux difference splitting of non‐linear terms and the pseudo‐compressibility technique employed in the current numerical scheme makes it robust both in space and time. Computational experiments are carried out to assess the influence of Reynolds' number and the spacing between two mild constrictions on the pressure drop across the constrictions. The study reveals that the pressure drop across a series of mild constrictions can get physiologically critical and is also found to be sensitive both to the spacing between the constrictions and the oscillatory nature of the inflow profile. The flow separation zone on the downstream constriction is seen to detach from the diverging wall of the constriction leading to vortex shedding with 3D features earlier than that on the wall in the spacing between the two constrictions. Copyright © 2002 John Wiley & Sons, Ltd.     

ISDN的现状和发展

９０年代将是ＩＳＤＮ和宽带ＩＳＤＮ迅速发展的年代，本文介绍了国外Ｎ－ＩＳＤＮ和Ｂ－ＩＳＤＮ的发展动向，并结合我国通信网的现状，对发展ＩＳＤＮ（Ｂ－ＩＳＤＮ）提出若干建议。     

四方向上的任意角度扇形数字滤波器的设计

具有任意角度（扇形所围成的角度）和任意方向（扇形所取方向）的扇形数字滤波器在图像数据压缩和地质、地震等方面的数据处理中有着广泛的应用。目前，大多数的工作多集中于水平及垂直方向的９０°扇形数字滤波器的设计，因而有必要研究任意方向上的任意角度的扇形数字滤波器的设计。本文介绍利用ＭｃＣｌｅｌｌａｎ交换法设计具有垂直，水平及±４５°方向上的任意角度的扇形数字滤波器的设计方法，垂直水平方向上的扇形滤波器的设     

IPA模型对Hopfield模型神经网络的改进

考虑Ｈｏｐｆｉｅｌｄ模型中假态之间的布尔逻辑关系，提出利用ＩＰＡ模型对神经网络中的假态进行抑制，并和原网络的性能进行了比较，结果表明：改进后的网络性能比Ｈｏｐｆｉｅｌｄ模型和ＩＰＡ模型均有较大提高。     

介质加载圆柱腔的场分析

本文应用严格场匹配法解决了介质加载圆柱腔的本征问题，计算了圆柱腔在纵向部分填充介质后ＴＥ０１ｎ模和ＴＭ０１ｎ模的本征频率和本征场型的变化。特别分析了本征模式在空气段为截止模的情况。本文的分析方法亦可应用到纵向部分填充介质的传输线和其它形状的谐振腔。     

陶瓷传感器的微型化与集成化

本文主要介绍陶瓷传感器在微型化及集成化方面的进展；指出了集成化多功能传感器存在的技术问题及未来发展趋势。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Modeling low-frequency electrode-type resistivity tools in invadedthin beds

The authors formulate and implement a numerical mode-matching (NMM) method to model electrode-type resistivity tools in invaded thin beds. The authors derive the low-frequency approximation of the Maxwell's equations to obtain the partial differential equation for the potential field. The new NMM program is validated by comparing the numerical results with those obtained from other dc programs. It is found that this new program is much faster than the program using the finite-element method (FEM), and hence is useful for routine interpretation of resistivity logs and for inversion     

An error and sensitivity analysis of the atmospheric- andsoil-correcting variants of the NDVI for the MODIS-EOS

Several soil- and atmospheric-correcting variants of the normalized difference vegetation index (NDVI) have been proposed to improve the accuracy in estimating biophysical plant parameters. In this study, a sensitivity analysis, utilizing simulated model data, was conducted on the NDVI and variants by analyzing the atmospheric- and soil-perturbed responses as a continuous function of leaf area index. Percent relative error and vegetation equivalent “noise” (VEN) were calculated for soil and atmospheric influences, separately and combined. The NDVI variants included the soil-adjusted vegetation index (SAVI), the atmospherically resistant vegetation index (ARVI), the soil-adjusted and atmospherically resistant vegetation index (SARVI), the modified SAVI (MSAVI), and modified SARVI (MSARVI). Soil and atmospheric error were of similar magnitudes, but varied with the vegetation index. All new variants outperformed the NDVI. The atmospherically resistant versions minimized atmospheric noise, but enhanced soil noise, while the soil adjusted variants minimized soil noise, but remained sensitive to the atmosphere. The SARVI, which had both a soil and atmosphere calibration term, performed the best with a relative error of 10 percent and VEN of ±0.33 LAI. By contrast, the NDM had a relative error of 20 percent and VEN of ±0.97 LAI     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate