变频器的常见故障分析

本文阐述了变频器的常见故障，并针对常见故障提出了解决措施。     

A new VOF‐based numerical scheme for the simulation of fluid flow with free surface. Part II: application to the cavity filling and sloshing problems

Finite element analysis of fluid flow with moving free surface has been performed in 2‐D and 3‐D. The new VOF‐based numerical algorithm that has been proposed by the present authors (Int. J. Numer. Meth. Fluids, submitted) was applied to several 2‐D and 3‐D free surface flow problems. The proposed free surface tracking scheme is based on two numerical tools; the orientation vector to represent the free surface orientation in each cell and the baby‐cell to determine the fluid volume flux at each cell boundary. The proposed numerical algorithm has been applied to 2‐D and 3‐D cavity filling and sloshing problems in order to demonstrate the versatility and effectiveness of the scheme. The proposed numerical algorithm resolved successfully the free surfaces interacting with each other. The simulated results demonstrated applicability of the proposed numerical algorithm to the practical problems of large free surface motion. It has been also demonstrated that the proposed free surface tracking scheme can be easily implemented in any irregular non‐uniform grid systems and can be extended to 3‐D free surface flow problems without additional efforts. Copyright © 2003 John Wiley & Sons, Ltd.     

Bandwidth renegotiation for VBR video over ATM networks

A scheme for delivery or variable bit-rate (VBR) video over asynchronous transfer mode (ATM) networks where bandwidth can be renegotiated during the duration of a call between the video source and the network is considered. Renegotiation can be initiated by either the video source or the network. The video bandwidth requirement is characterized by a usage parameter control (UPC) consisting, in general, of peak rate, burst length, and sustained rate. A baseline design is outlined where rate-control adjusts the source's rate while a new UPC is requested from the network. When granted, the new UPC allows the source to maintain its target quantization and delay requirements. Rate control epochs may be extended when the network blocks UPC requests or sets a lower UPC value to temporally deal with congestion. Simulation results are presented for VBR MPEG video. The results show that with a moderate renegotiation rate the scheme tracks the bandwidth requirements of the source. As a result, the video quality and bandwidth efficiency can be maintained     

Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wirelasers with different current blocking configurations

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)_nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here     

Motion based object tracking with mobile camera

An efficient algorithm which detects and tracks a moving object is proposed. The global motion energy caused by camera movement is eliminated by finding the maximal matching position with the cross-correlation value between two consecutive frames using the spiral scanning technique. The region of a moving object is segmented exactly by combining the results of the temporal derivatives and edge map from one image, and the actual centroid of the moving object is determined as the mid-point of the cumulative distribution of the projection profile of the region     

An isolated ZVS/ZCS flyback converter using the leakage inductanceof the coupled inductor

This paper describes a simple and effective way to modify an existing hard-switched flyback power converter into a circuit with zero-voltage switching (ZVS) and zero-current switching (ZCS). The key improvement is to turn the unattractive features of the coupled inductor leakage inductance and snubber capacitor into attractive ones. The coupled inductor leakage inductance and snubber are used to form a quasi-resonant circuit to facilitate ZVS/ZCS of all power devices. The operating principles of the power converter and experimental results are presented     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

Random discrete PWM method for DC-DC power converters

A random discrete pulse-width modulation (RDPWM) scheme is examined and compared with the randomised pulse-position modulation (RPPM) method for DC-DC power conversion. The RDPWM method has no switching harmonics while the RPPM method has significant switching harmonics. Power spectral characteristics of the two methods are presented and discussed     

A new mean field SA-SA' critical point in a symmetry breaking field

We consider a S_A-S_A' critical point in the presence of a symmetry-breaking external magnetic (electric) field with a positive magnetic (dielectric) anisotropy or a dislocation layer. Via a renormalization group analysis of the model hamiltonian, we show that the upper critical dimensions below which mean-field theory breaks down is d_c = 2·5. Thus the S_A-S_A' transition in three dimensions becomes mean-field like in the presence of a symmetry-breaking field. We estimate the reduced temperature region where we can expect to see the mean field S_A-S_A' critical point in the presence of a magnetic field or a dislocation layer.