Investigation of the Li1+xV3O8 electrode–organic electrolyte interface by scanning photoelectron microscopy

To investigate the formation of a solid electrolyte interface (SEI) on the Li_1+xV₃O₈ electrode surface in the thermodynamic stability range of the organic electrolyte, we applied scanning photoelectron microscopy (SPEM) to a pristine electrode and to an electrode after ten cycles. The F K-edge absorption spectrum of the cycled electrode showed that LiF forms on the electrode surface during the lithium insertion–extraction process in the Li_1+xV₃O₈/Li cell. The photoelectron spectrum for the cycled electrode showed intense spectral features corresponding to Li 1s, F 2s, F 2p, and P 2p electron signals, whereas these spectral features were of negligible intensity for the pristine electrode. The above results give strong support for the formation of an SEI that consists of LiF and compounds containing phosphorus during operation of the battery. The SPEM images also revealed that the fluorine distribution on the surface of the cycled electrode was inhomogeneous.     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

Brightness and decay time of Zn2SiO4:Mn phosphor particles with spherical shape and fine size

Green-light-emitting Zn₂SiO₄:Mn phosphor particles were synthesized by modified large-scale spray pyrolysis using a colloidal solution containing fumed silica particles. The particles had a fine size, filled morphology, spherical shape and non-aggregation characteristics even after post-treatment at 1150 °C. The luminescence characteristics of Zn₂SiO₄:Mn phosphor particles having spherical shape, such as brightness and decay time under VUV excitation light, were investigated as a function of Mn content. The luminescence intensity exhibits a maximum at 5 mol% Mn-doped powder. The decay time increases consistently with decreasing Mn content and more saturated color coordinates are obtained with the composition having 12 mol% Mn. As a consequence, the 10 mol% Mn-doped powder proved to provide a good combination of favorable luminance and acceptable decay time. The influence of post-treatment temperature on the decay time and photoluminescence characteristics of Zn₂SiO₄:Mn particles was also investigated. Particles post-treated at 1155 °C had the maximum photoluminescence intensity, which was identical to 113% that of the commercial product, and a comparable decay time of 5.8 ms. PACS 81.20.Rg; 78. 55.Hx; 78.40.Ha; 81.05.Hd; 81.40.Tv     

Trenched‐Sinker LDMOSFET (TS‐LDMOS) Structure for 2 GHz Power Amplifiers

This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.     

从AVS到MPEG-2的转码算法研究

介绍了视频转码的几种基本技术，分析了MPEG-2与AVS的不同，提出了一种从AVS到MPEG-2的转码系统．针对关键的转码算法设计了一种综合优化方案，实验显示图像质量和压缩率都有明显提高。     

基于人文关怀的信号配时方法研究

在传统的信号配时中，都是以减少车辆的总延误为目标，这样并不能很好地体现出整个社会中人的时间价值。现以减少所有通过交叉口的出行者的总延误为目标，在传统的信号配时方案的基础上，提出了一套新的配时方案，同时以减少全部出行者的总延误时间为目标给出了相应的延误评价公式，最后以杭州市文一路-古翠路口的实测交通数据进行分析，论证了本配时方案的有效性。     

立方相GaN的持续光电导

研究了金属有机物化学气相外延 (MOVPE)方法生长的非故意掺杂的立方相 Ga N的持续光电导效应 .在六方相 Ga N中普遍认为持续光电导效应与黄光发射有关 ,而实验则显示在立方 Ga N中 ,持续光电导效应与其中的六方相 Ga N夹杂有关系 ,而与黄光发射没有关系 .文中提出 ,立方相 Ga N与其中的六方相 Ga N夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因 .通过建立势垒限制复合模型 ,解释了立方相 Ga N的持续光电导现象的物理过程 ,并对光电导衰减过程的动力学作了分析 .对实验数据拟合的结果证明以上的模型和推导是与实验相符的 .     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

移动IP的分层管理及在CDMA中的实现技术

介绍了移动IP技术 ,指出了传统移动IP技术在无线通信网中的不足 ,接着论述了分层管理的思想。通过对移动IP扩展协议HAWAII的分析 ,最后提出了把HAWAII用于CDMA中进行分层管理的架构