气流式加速度传感器的敏感机理

介绍了在研制气流式加速度传感器过程中，为对气流式加速度传感器进行建模，作者对气流式加速度传感器的工作机理进行了理论性探讨。在分析过程中以流体力学、传热学和惯性理论为基础并结合实验结果，建立了适合于气流式加速度传感器的气体运动方程和能量方程。同时还讨论了热线测量加速度的方法及根据实验分析了输入加速度对腔体内温度及传感器输出电压的影响，从而为进一步研究一系列气流式传感器的工作机理提供了方法。     

Lossless subband coding system based on rounding transform

We propose a new rounding transform called the overlapping rounding transform (ORT). It is defined as a two-port input/two-port output FIR filtering system with a pair of rounding operations. The ORT is applied to develop lossless subband coding systems. The ORT approach has both a simpler representation and more possibilities for lossless subband implementation than the lifting scheme     

Implementation of secure digital communication by hyperchaoticsynchronisation

By active-passive-decomposition synchronisation, the application of the one-way coupled ring map lattice hyperchaotic system in secure digital speech communication is demonstrated. Synchronisation guarantees strong security and recovery without error     

Determination of tyrosine traces by adsorption voltammetry of its copper (II) complex

The electrochemical behavior of the copper-tyrosine complex has been studied by linear-sweep adsorption voltammetry. In 0.02 mol/L Na₂HPO₄ buffer solution (pH=9.6), the complex can be adsorped on a hanging mercury drop electrode and reduced at a peak potential of about –0.42 V (vs. SCE). The secondary derivative peak height is linear proportional to the concentration of tyrosine in the range 1.0×10^–7–5.0×10^–5 mol/L. The detection limit is 5×10^–8 mol/L.Project supported by the Provincial Science Foundation of Shandong Province     

基于神经网络的VQ图象编码

文章给出将神经网络与矢量量化相结合的两种编码方法，介绍了其原理和实现的算法。经计算机模拟表明，在比特率低于０．３ｂｐｐ时仍可得到高质量的编码图象。     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

计算机存储系统的9位字节单向错误检测码

本文介绍了一种计算机存储系统中的单向错误检测码，系统构成采用９位字节，其中８位数据位，１位校验位，并使用一个单独的附加奇偶校验字节。单向错误检测码有两类，一类每个字包含固定的奇偶校验位；另一类每个字节包含的检验位的构成方式是任意的。     

在柔性变焦系统中的压力变焦镜

从理论上和实验上对水冷镜的镜面曲率半径随压力变化的规律作了研究。对压力变形后镜面相对于球面作了波像差分析，分析表明压力变焦镜用于中红外激光系统是合适的