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41.
42.
常规双极晶体管在77K下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Gummel数,基区方块电阻,渡越时间和穿通电压等参数与温度及基区掺杂的关系,然后讨论了低温双极器件基区的优化设计问题。 相似文献
43.
微机在应变测量中的应用,采用上位机和下位机组合方式.上位机为一台IBM-PC/XT微机,用于对数据进行后处理.下位机以Z80-CPU为控制器,由传感器、转换器、接口及外设等组成数据采集器,实施对应变、压力和位移等参数的采集、显示和打印(即数据的预处理).上位机和下位机之间的数据传输,采用串行的方式,通过RS-232接口完成.本文主要以应变的采集处理为例,介绍系统功能、硬件配置及软件设计. 相似文献
44.
An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature. 相似文献
45.
无线数据通信网发展趋势 总被引:1,自引:0,他引:1
无线数据通信具有两大发展趋势,即低速的广域移动数据网及高速的局域无线数据网。本文介绍了其技术特点、应用情况和市场前景,分析了无线数据通信传输技术、网络结构和媒质接入控制等问题。 相似文献
46.
Chih-Yao Huang Ming-Jer Chen 《Electron Devices, IEEE Transactions on》1994,41(10):1806-1810
This work reports the development of design model for n-well guard rings in a CMOS process utilizing a low-doped epitaxial layer on a highly doped substrate. The validity of the model has been judged by a wide range of experimental data measured from the fabricated n-well guard ring structures with guard ring width as parameter. From the model developed, guidelines have been drawn to minimize the guard ring width while critically suppressing the amount of electrons escaping from the guard ring 相似文献
47.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献
48.
The implementation of time-domain diakoptics in the FDTD method 总被引:1,自引:0,他引:1
The time-domain diakoptics is implemented in the finite-difference time-domain (FDTD) method with two types of connecting interfaces: i) directional interface (TLM-type), and ii) total-field interface (FDTD-type). The FDTD-type interface provides a more efficient way to realize time-domain diakoptics than TLM, especially for device optimization problems. To emulate the TLM-type interface in FDTD, two novel algorithms are developed in this paper. One is to implement an ultra-wideband absorbing boundary on the excitation plane during excitation. The other is to separate directional waves without the knowledge of incident waves. For a large circuit with cascaded modules, sequential and parallel algorithms are provided to connect them. With these connecting algorithms, time-domain diakoptics is one candidate method to realize modular and parallel computation in FDTD simulations. The validity of these algorithms is confirmed by comparison with simulated results from Microwave SPICE 相似文献
49.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
50.
The polarization-dependent absorption and emission spectra of the 4I13/2-4I15/2 transition (λ~1.5 μm) in single crystal bulk Er:LiNbO3 have been measured. Low-temperature (10 K) measurements of the Stark split energy levels of these two manifolds indicate at least two Er3+ sites. McCumber theory is applied to determine the Er:LiNbO3 absorption and emission cross sections. These values are used to calculate the gain characteristics of Er:LiNbO3 channel waveguides. Calculations indicate that a gain of 10 dB is achievable in a waveguide of several centimeters using ~20-mW pump power 相似文献