淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

双旋Y切石英振子厚度模式的频温特性的研究

本文利用描述固体中弹性声波的克里斯托费尔方程,建立了双旋Y切石英振子厚度模式的频温特性分析方法,并编制了相应的计算机程序。该程序可给出双旋Y切石英振子在任意切角(ф_3ф_1)下的厚度模(a、b、c模)的频率温度特性曲线。文中给出了单旋AT切、BT切(b模)、双旋SC切(b、c模)、FC切、IT切、LC切、NL_1切、NL_2切、AK切等各已知切型的频温特性曲线。对石英谐振器的切角灵敏度和切角误差进行了分析。     

On the decomposition of Kn into complete m-partite graphs

Graham and Pollak [3] proved that n ?1 is the minimum number of edge-disjoint complete bipartite subgraphs into which the edges of K_n can be decomposed. Using a linear algebraic technique, Tverberg [2] gives a different proof of that result. We apply his technique to show that for “almost all n,” ? (n + m ?3)/(m ?1) ? is the minimum number of edge-disjoint complete m-partite subgraphs in a decomposition of K_n.     

Dependence of slow crack growth in polyethylene on butyl branch density: Morphology and theory

A theoretical equation has been developed to described the rate of slow crack growth in an ethylene-hexene copolymer in terms of the basic morphological parameters. These parameters are spacing of the butyl branches, number of tie molecules, and the thickness of the lamellar crystal. Experimentally, the thickness of the lamellae and the long period were determined as functions of the branch density. The calculation of the number of tie molecules is based on the values of the molecular weight and the long period. The model of slow crack growth is based on the rate of disentanglement of the tie molecules. The rate of disentanglement varies inversely with the number of tie molecules and directly with the number of tie molecules that are not pinned by the branches.     

色心激光器及其发展

色心激光器由于其特殊的调谐范围及单频、窄线宽的工作特点,可作为高分辨率的分光仪的理想窄带光源而用于分子振动一转动跃迁的研究,在光纤通信、超高速现象的研究等方面也有其独特的应用。本文叙述色心的构造及其特点,色心激光器的泵浦及泵浦的最佳化,调谐方式及新调谐范围的进展,单频、窄线宽运行的实现、激光脉冲的压缩等。最后指出色心激光器的发展方向和可能的应用。     

牙齿化石中由辐照产生的陷阱电子的热稳定性研究

本文对周口店北京猿人遗址的动物牙齿化石进行了辐照产生的陷阱捕获电子的热稳定性研究和釉质样品及牙质样品的热稳定性对比实验。得到釉质样品中g=2.0016 ESR峰的寿命为7.1×10⁶年(20℃)。说明了取该峰进行ESR年代测定的可信性和用釉质样品进行ESR年代测定的必要性。     

N2（A）及N（2D）对IF（X）的传能研究

在微波放电系统中,对NH_3-F-F_2-CF_3I体系进行研究,结果表明,向IF(X)传能的诸多媒介中,N_2(A)及N(~2D)起着主要作用,并且这一结论在经微波激发后的N_2与CF_3I的直接反应中得到了进一步证实。     

铝酸锶铕的合成与发光的研究

本文详细报导4(SrEu)O·7Al2O3.磷光体的合成及激活剂Eu2+离子浓度、硼酸、五氧化二磷等对磷光体发光强度,发射光谱和激发光谱的影响.讨论了不同Eu2+离子之间的能量传递.测量了不同Eu2+浓度下磷光体的荧光寿命和长余辉特性.     

Trefftz,collocation, and other boundary methods—A comparison

In this article we survey the Trefftz method (TM), the collocation method (CM), and the collocation Trefftz method (CTM). We also review the coupling techniques for the interzonal conditions, which include the indirect Trefftz method, the original Trefftz method, the penalty plus hybrid Trefftz method, and the direct Trefftz method. Other boundary methods are also briefly described. Key issues in these algorithms, including the error analysis, are addressed. New numerical results are reported. Comparisons among TMs and other numerical methods are made. It is concluded that the CTM is the simplest algorithm and provides the most accurate solution with the best numerical stability. © 2006 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq, 2007     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage