Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

The magnetic entropy changes in Gd1−xBx alloys

A series of Gd_(1−x)B_x alloys have been prepared by arc melting method. After introducing small quantity of B atom in Gd, the Curie temperature of these alloys increase while the magnetic entropy changes are almost same as that of Gd. The refrigerant capacities of these alloys are also greater than that of Gd. These results suggest that Gd_(1−x)B_x alloys may be utilized as refrigerant in household magnetic refrigeration.     

Effect of oxygen exposure on the magnetic properties of ultrathin Co/Ge(1 1 1) films

Influences of oxygen exposure on the magnetic properties of Co/Ge(1 1 1) ultrathin films have been investigated by surface magneto-optic Kerr effect technique. As the oxygen exposure increases on Co/Ge(1 1 1) films, their magnetic properties could be modified. As an example for 15 ML Co/Ge(1 1 1) films, the coercivity increases from 730 to 920 Oe and the remanence Kerr intensity is reduced for 500 Langmuir (L) of oxygen exposure. Corresponding compositions analyzed by Auger electron spectroscopy measurement shows that the amount of oxygen on the surface layers increases with increasing the oxygen exposure time. Oxygen distributes on the topmost layers of the film. The adsorbed oxygen influences the electronic density of states of Co and results in the changes of the magnetic properties. Besides, the appearance of O/Co/Ge interface could modify the stress anisotropy, and as a result the coercivity of ultrathin Co/Ge(1 1 1) film is enhanced.     

Characterization of ultrashort optical pulses with third-harmonic-generation based triple autocorrelation

We present a method to obtain complete information of femtosecond pulses. By measuring triple-optical autocorrelation directly with third-harmonic generation, without spectral information, a temporal pulse shape can be obtained by analytical calculation without direction-of-time ambiguity. Combining the resulting optical pulse shape with its corresponding optical spectrum, the exact phase and color variations in time can all be recovered with a Gerchberg-Saxton algorithm through an iterative calculation with an O(n) complexity.     

An experimental study of dynamic tensile properties of glass fiber at low-temperatures

Tensile impact experiments of EC8.0−24×7 glass fiber bundles at different low temperaturesT(14°C, −40°C and −10°C) and strain rates ɛ were carried out, and complete stress-strain curves were obtained. Within the range of the experiment temperatures and strain rates, it is found that the initial modulusE, the ultimate strength σ_max and the unstable strain ɛ _b of the glass fiber bundles all increase with ɛ at an identicalT. At an identical ɛ, with the decrease ofT, E and σ_max increase; but ɛ _b increases when 10°C>T>−40°C and decreases when −40°C>T>−100°C. The strain-rate- and temperature-dependent bimodal Weibull statistical constitutive theory was adopted for the statistical analysis of the experimental results, and the Weibull parameters of single fiber were obtained. The results show that the bimodal Weibull distribution function is suitable to represent the strength distribution of the glass fiber at low temperature and different strain rates. The differences in the mechanical properties between EC8.0−24×7 and EC5.5−12 ×14 glass fiber bundles were also discussed. Project supported by the National Natural Science Foundation of China (No. 19772058).     

Large time behavior of the solutions to the Boltzmann equation with specular reflective boundary condition

In this paper a half space problem for the one-dimensional Boltzmann equation with specular reflective boundary condition is investigated. It is shown that the solution of the Boltzmann equation time-asymptotically converges to a global Maxwellian under some initial conditions. Furthermore, a time-decay rate is also obtained.     

Artificial time integration

Many recent algorithmic approaches involve the construction of a differential equation model for computational purposes, typically by introducing an artificial time variable. The actual computational model involves a discretization of the now time-dependent differential system, usually employing forward Euler. The resulting dynamics of such an algorithm is then a discrete dynamics, and it is expected to be “close enough” to the dynamics of the continuous system (which is typically easier to analyze) provided that small – hence many – time steps, or iterations, are taken. Indeed, recent papers in inverse problems and image processing routinely report results requiring thousands of iterations to converge. This makes one wonder if and how the computational modeling process can be improved to better reflect the actual properties sought. In this article we elaborate on several problem instances that illustrate the above observations. Algorithms may often lend themselves to a dual interpretation, in terms of a simply discretized differential equation with artificial time and in terms of a simple optimization algorithm; such a dual interpretation can be advantageous. We show how a broader computational modeling approach may possibly lead to algorithms with improved efficiency. AMS subject classification (2000)  65L05, 65M32, 65N21, 65N22, 65D18     

X分形晶格上Gauss模型的临界性质

采用实空间重整化群变换的方法,研究了2维和d(d>2)维X分形晶格上Gauss模型的临界性质.结果表明:这种晶格与其他分形晶格一样,在临界点处,其最近邻相互作用参量也可以表示为K=bqiqi(qi是格点i的配位数,bqi是格点i上自旋取值的Gauss分布常数)的形式;其关联长度临界指数v与空间维数d(或分形维数df)有关.这与Ising模型的结果存在很大的差异. 关键词： X分形晶格 重整化群 Gauss模型 临界性质     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

电子束光刻中的辐照损伤

本文研究了电子束光刻中电子能量(10—30keV)和电荷剂量(10~(-6)—10~(-3)C·cm~(-2))对铝栅MOS电容器的损伤和低温退火(<500℃)的影响。研究电子束光刻中高能量(30keV)和高剂量(10~(-3)C·cm~(-2))电子束引起的损伤,对电子束汽相显影光刻和电子束无显影光刻是有实际意义的。实验表明,平带电压的损伤可高达十几伏,界面态密度可高达10~(12)cm~(-2)eV~(-1)以上。在一定电荷剂量下,平带电压的损伤对电子能量的变化(在一定范围内)不敏感。在一定电子能量下,界面态密度的损伤对电荷剂量的变化(在一定范围内)不敏感。低温(<500℃)退火能完全消除平带电压的损伤,但不能完全消除界面态密度的损伤。