Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

Two approaches have been used to fabricate stable photoelastic waveguides with planarized surfaces on GaAs-AlGaAs heterostructures. The first approach uses tensile Ni/sub 3/GaAs stressors formed by metal-semiconductor reactions. The second approach uses inert, refractory and compressive stressors, such as RF sputtered W and RF co-sputtered WNi films. For comparison purposes, ridge waveguides have also been fabricated using the same heterostructure by a dry etching technique. Optical losses of photoelastic waveguides, measured by Fabry-Perot (FP) method at a wavelength of 1.53 /spl mu/m, are comparable to or better than those of the ridge waveguides. Material loss appears to be the primary loss mechanism in both photoelastic and ridge waveguides. These results indicate that the photoelastic waveguide processing technique reported in this study is a promising alternative to commonly used dry etching techniques for planarization.     

Design of optimum signals for the simultaneous estimation of timedelay and Doppler shift

The problem of joint estimation of time delay and Doppler shift is considered from the point of view of the Wigner distribution of the signal. A very efficient method of obtaining the optimum signal with minimum estimation error based on the convexity of the design region is developed. Practical applications, however, require the signal to satisfy other constraints which present complications in acquiring the optimum signal. A design approach based on the method of simulated annealing is suggested to solve for the optimum signal under constraints. The performance of the signals so obtained is evaluated and compared with that of signals obtained by synthesis     

Infrared Spectroscopic Analysis of Chrysene and 1.2-Benzanthracence in Wax films

Chrysene and 1.2-benzanthracene are successfully doped in a solid wax film and their vibrational spectra in gooo--400cm^-1 are discussed. The harmonic frequencies and relative intensities of both the molecules observed in the film are compared with theoretical values calculated by the density functional theory （DFT） model as well as with the previous experimental data. The effects on spectra due to change of matrix and some additional bands observed in the wax film are also reported. Excellent agreement in the spectral positions and strengths between the experiments and DFT values are found.     

Observation of spontaneous pattern with six-fold symmetry in disk-shaped ZnO complex microstructures

Using a simple vapor phase transport technique, we have fabricated unique complex disk-shaped ZnO microstructures comprising a small disk coaxially grown on a large one and observed spatially perfect six-fold symmetric patterns. The observed results can be explained based on the spontaneous nanoindentation (NI) effect under the geometric constraints and the explanation can be extended to fathom the growth mechanism of other highly symmetrical ZnO nanostructures. Our results indicate that NI not only can elucidate the mechanical properties of surfaces and thin films but also is an effective approach to fabricate ordered nanostructures with high precision on the location of the building blocks. PACS 81.16.Rf; 81.07.-b; 81.05.Dz     

Effect of nitrogen surface doping on the work function and field emission of hydrogenated amorphous carbon films

The effect of nitrogen surface doping on the electron field emission characteristics of hydrogenated amorphous carbon films was studied. It was found that the emission threshold electric field decreased after nitrogen surface doping which indicated the reduction of the emission barrier at the film surface. It was demonstrated that this improvement arose from the decrease of the effective work function due to the formation of a dipole layer induced by chemical termination and chemical structural change on the film surface. PACS 52.75.Xx; 73.30 +y; 73.61.Jc     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

Faddeev-Noble Versus Sasakawa-Sawada Equations for the Nuclear Three-Body Coulomb Problem

We compare the efficiency of two Faddeev-type approaches for the nuclear three-body Coulomb problem. The first one is a modification of Noble’s approach, the second one is due to Sasakawa and Sawada. In an integral-equation formulation both of these methods rely on the same Green’s operators and driving terms. The differences lie in the treatment of the long-range Coulomb potentials. Numerical examples show that the modified Faddeev-Noble approach provides for faster convergence.     

Microwave Parametric Frequency Dividers With Conversion Gain

A novel active parametric frequency divider configuration using coupled microstrip transmission lines and two balanced pseudomorphic HEMTs (pHEMTs) is presented. The analysis of the divide-by-2 circuit presented applies the principles of subharmonic generation using a nonlinear reactance to an active semiconductor device such as a pHEMT. A 2-1-GHz active analog frequency divider is designed and fabricated, with measurements showing a 20% bandwidth, 13.5-dB conversion gain, and harmonic rejection levels of more than 22 dBc. A maximum conversion gain of 18 dB is also achieved. These higher conversion efficiencies and the ability to cascade dividers allow for higher order division ratios to be achieved with the same topology.     

A Lower Bound for the Differences of Powers of Linear Operators

Let T be a bounded linear operator in a Banach space, with σ（T）={1}. In 1983, Esterle-Berkani＇ s conjecture was proposed for the decay of differences （I - T） T^n as follows： Eitheror lim inf （n→∞（n＋1）｜｜（I-T）T^n｜｜≥1/e or T = I. We prove this claim and discuss some of its consequences.