空间红外大口径折射式低温镜头设计与验证

针对目标探测类空间红外相机大范围成像、高灵敏度探测、高精度定位等应用需求,文中提出采用像方远心光路和低温光学技术结合的解决方案,设计了物方视场角8°×8°、入瞳口径265 mm、工作温度200 K的像方远心折射式光学系统。镜头最大口径280 mm,采用多级分散的弹性支撑设计,解决大口径低温透镜装框、透镜组件支撑和镜头整体安装各环节的热应力卸载问题。在保证高刚度和低漏热的情况下,使低温下透镜的热应力对镜头能量集中度的影响降低到可接受范围内。镜头完成装调及室温下像质确认后,进行了力学振动试验,并将其制冷到200 K水平测试像质,测试结果表明,镜头能量集中度达到轴上75%,边缘视场72%。     

Facile non‐lithographic route to highly aligned silica nanopatterns using unidirectionally aligned polystyrene‐block‐polydimethylsiloxane films

Thin films (monolayer and bilayer) of cylinder forming polystyrene‐block‐polydimethylsiloxane (PS‐b‐PDMS) were shear aligned by the swelling and deswelling of a crosslinked PDMS pad that was physically adhered to the film during solvent vapor annealing. The nanostructures formed by self‐assembly were exposed to ultraviolet‐ozone to partially oxidize the PDMS, followed by calcination in air at 500 °C. In this process, the PS segments were fully decomposed, while the PDMS yielded silica nanostructures. The highly aligned PDMS cylinders were thus deposited as silica nanolines on the silicon substrate. Using a bilayer film, the center‐to‐center distance of these features were effectively halved from 38 to 19 nm. Similarly, by sequential shear‐alignment of two distinct layers, a rhombic array of silica nanolines was fabricated. This methodology provides a facile route to fabricating complex topographically patterned nanostructures. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1058–1064     

一种新的解映射算法的推导和实现

本文在一种16QAM,64QAM,256QAM的解映射算法启发下,提出了新的适合32QAM和128QAM的解映射算法,并在此基础上,给出了适合DVB-C接收机的多QAM解映射结构.然后在FPGA中实现和仿真.最后通过比较说明,相对于传统的查找表解映射方法,提出的解映射算法可以明显减少资源使用率.     

IDS告警融合与关联模型的研究

入侵检测是保障网络安全的重要手段,针对现有入侵检测系统中告警数量多、协调性差等问题,论文提出了一种具有告警融合与关联功能的告警处理系统模型,该模型冗余告警量少、整体检测能力强,并能进行攻击企图的预测,能有效提高入侵检测的效率,有助于进一步增强网络的健壮性。     

DS90C363/DS90CF364 LVDS发送/接收器在数字RGB液晶屏上的应用

通过在FPD铁路上使用LVDS技术可使具有数字RGB接口的液晶显示屏的工作距离大大增加。文章通过一个具体应用环境介绍了21位LVDS发送器/接收器DS90C363/DS90CF364传输套片的主要特性、引脚功能、工作原理，同时指出了在具体设计使用时的注意事项。     

Surface of Ru/Fe2O3 catalysts used in water-gas shift reaction studied by auger electron spectrometry

Summary Carbon deposits on the surface ofRu/Fe₂O₃ catalysts used in the water-gas shift reaction have been investigated by Auger Electron Spectrometry. A correlation has been found between the thickness of the carbon deposit and the catalytic activity in WGSR. The carbon deposit covers the metallic active centers and blocks their contact with reagents. The dotting of the iron oxide support with sodium has been found to reduce the amount of carbon deposit. .      

一种的四进制CPM调制器的设计与FPGA实现

设计并实现了一种基于FPGA的四进制连续相位调制器（PCM）。该调制器的基带调制模块通过查表法实现，复杂度较低。仿真结果验证了设计的正确性。     

McAfee推进在华战略

全球入侵防护和安全风险管理解决方案领先供应商McAfee公司7月5日在华宣布,将正式启用中文名称“迈克菲”。同期还宣布在深圳成立的移动技术研究实验室已投入使用,为包括摩托罗拉在内的移动设备开发安全解决方案。此外迈克菲还与中国联通、百度、软通科技和华擎科技四家中国企业结盟,共同为中国的消费者提供安全产品。纵观McAfee的中国区战略,可以说是品牌加固、科研深化与结盟广泛全线推进。迈克菲寓意双重也许启用一个中文名称本身并不是一件值得大惊小怪的事,但从McAfee董事会主席兼CEO GeorgeSamenuk先生亲临北京别具匠心的新闻发…     

干涉型激光直写技术用于光盘防伪

利用作者研制的干涉型激光直写系统，阐述了干涉型激光直写设计OVD的方法，防伪特征，介绍了应用于光盘防伪的OVD技术和应用前景，给出了实验结果。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.