Codiameters of 3‐connected 3‐domination critical graphs

A graph G is 3‐domination critical if its domination number γ is 3 and the addition of any edge decreases γ by 1. Let G be a 3‐connected 3‐domination critical graph of order n. In this paper, we show that there is a path of length at least n?2 between any two distinct vertices in G and the lower bound is sharp. © 2002 John Wiley & Sons, Inc. J Graph Theory 39: 76–85, 2002     

Numerical analysis for the periodic response of nonsmooth dynamic systems of high-dimension

This paper deals with the numerical solution of high dimensional dynamic systems with nonsmooth characteristics, such as structural elastoplasticity, mechanical clearance and dry friction. As a stable periodic response of the system attracts its transient response, it may be extracted from the transient response somehow. The paper suggests a novel iteration scheme to extrapolate the periodic response from a short time history of its transient response by curve fitting. Compared with the current schemes such as shooting and incremental harmonic balancing, the present scheme makes full use of the information within the transient response and the system characters, then its computation efficiency has increased by an order and the numerical convergence depending on the initial iteration has greatly improved.The subject supported by the Chinese Foundation of Aeronautical Science     

Ca原子的Penning离化

用614.3nm染料激光照射以Ne为缓冲气体的Ca空心阴极灯,观察到了Ca原子的Pen-ning离化效应。对比在Li空心阴极灯中获得的光电流信号,解释了Ca原子的彭宁离化。     

TV信号的多路传输及带宽压缩

本文阐述了时间压缩信号及其频谱、各种差分信号的产生方法及频带压缩过程.最后对图象带宽为4.2MHz的TV系统用8.4MHz带宽传送三个TV信号的具体执行力式作了介绍.     

溴化亚铜脉冲激光光动力学疗法治疗鲜红斑痣临床研究

用ＣｕＢｒ脉冲激光光动力学疗法治疗鲜红斑痣８例２１个区域，其中１１个区红色完全褪去，７个区残留少量浅色，３个区红色明显褪去，２０个区域无疤痕形成。     

从江苏苏南数字微波线路看广播电视专用网发展前景

新建微波干线电路采用高质量的数字微波设备是广电部科技工作会议的精神之一。本文介绍了江苏苏南数字微波线路，并从方案确定、技术实现、设备选型等方面进行分析比较，从而得到一个合理的整体方案。本文还着重阐述了数字传输的关键设备－编码器的现状与发展趋势，提出广播电视专用网多功能应用的设想。     

短毫米波和亚毫米波接收机的发展现状

本文概述了短毫米和亚毫米波接收机的发展现状，介绍了接收机的重要组成部件：混频器、振荡器和放大器的发展水平以及毫米波单片集成电路的现状，给出了接收机的最新性能指标。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed