群时延精确设计的全差分四阶Bessel滤波器

采用MOS管有源电阻,提出了一种全差分R-MOSFET-C四阶Bessel有源低通滤波器,.通过调节工作于亚阈值区的CMOS管的沟道导纳补偿电阻值的大小,能抵消集成电路制造工艺中电阻值的一致偏差,实现Bessel有源滤波器群时延的精确设计.根据无源滤波器的状态方程完成有源滤波器的综合,应用3.3V,0.5μm CMOS工艺完成了群时延大小为0.75μs的四阶Bessel低通滤波器的管极计算机仿真,仿真结果表明所提电路正确有效,适于全集成.     

地域通信网的干扰技术研究

本文在分析地域通信网结构及组成的基础上,研究了对地域通信网实施的节点破坏、末端信息封锁、局部阻塞瘫痪等对抗方法,并使用干扰地域通信网的程度、节点干扰率、末端节点封锁率和传递信息误差率等指标对干扰效果进行评估。     

构建完整的宽带网络综合计费管理系统

为适应网络发展的需要 ,有线宽带运营商需要通过一套完整的宽带网络计费管理系统 ,从硬件到软件、从前台到后台对各个方面进行管理 ,实现统一、规范、快速的信息化、网络化电脑管理 ,降低运营成本 ,提高工作效率 ,以过硬的服务质量、优惠的价格、丰富的内容吸引用户。     

Rare-earth-enabled universal solders for microelectromechanical systems and optical packaging

In packaging of microelectromechanical systems (MEMS), optical, and electronic devices, there is a need to directly bond a wide variety of inorganic materials, such as oxides, nitrides, and semiconductors. Such applications involve hermetic-sealing components, three-dimensional MEMS assembly components as well as active semiconductor or optical components, dielectric layers, diffusion barriers, waveguides, and heat sinks. These materials are known to be very difficult to wet and bond with low melting-point solders. New Sn-Ag- or Au-Sn-based universal solders doped with a small amount of rare-earth (RE) elements have been developed, which now allow direct and powerful bonding onto the surfaces of various MEMS, optical, or electronic device materials. The microstructure, interface properties, and mechanical behavior of the bonds as well as the potential packaging applications of these new solder materials for MEMS and optical fiber devices are described. Various packaging-related structural, thermal, or electrical issues in MEMS are also discussed.     

苯和甲苯差分吸收光谱方法的实验室测量研究

本文介绍了差分光学吸收光谱法(DOAS)测量大气污染气体浓度的基本原理。DOAS方法就是利用氙灯发出的紫外—可见光，经望远镜准直后再经过一段距离的传输，由望远镜来接收．在传输中，由于各种不同的分子在不同的波段对光有不同的吸收特征，使光谱具有了污染物的特征，再通过与光源发出的光进行比较，反演这些气体在大气中浓度．我们将DOAS方法应用在监测有机物上，在分析光谱的过程中，应用多项式拟合和最小二乘法，从而精确地从测量光谱中来反演出大气中污染气体的浓度．文中用DOAS方法测量了苯和甲苯的样品，并分析了结果，结果和理论吻合．可为环境中有机污染物监测提供可靠的方法。     

电解铜箔产业发展趋势

随着技术的进步,电解铜箔在厚度上迅速向薄、超薄方向发展,THE、RCC、CAC等特殊性能铜箔需求比例快速 增加,以锂离子电池为代表的新应用领域正在形成。     

周期分析法在棉红蜘蛛发生程度预测中的应用

本文应用周期分析方法对江陵县棉红蜘蛛—朱砂叶螨的预测预报技术作了新的尝试．经对江陵县３６年历史资料拟合，符合率高达９４．４％．运用这一技术对该县１９８７—１９９６年棉红蜘蛛发生程度进行了１０年长期预测预报．     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

A comparison of master equation and Fokker-Planck equation in the thermodynamic limit

The master equation and the Fokker-Planck equation are compared thoroughly in both of the stationary and the time-dependent cases for a one-dimensional system. The comparison includes the master equation without detailed balance.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.