A New Approach for Built‐in Self‐Test of 4.5 to 5.5 GHz Low‐Noise Amplifiers

This paper presents a low‐cost RF parameter estimation technique using a new RF built‐in self‐test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.     

Ripple: a wireless token-passing protocol for multi-hop wireless mesh networks

This work presents a wireless token-passing protocol, named Ripple, for wireless mesh networks (WMNs). In contrast to existing random-access approaches, Ripple uses a decentralized controlled-access approach to protect nodes from unintentional packet collisions and maximize the spatial reuse. The performance of Ripple under an error-free wireless channel was investigated and the accuracy of the analysis was verified by simulation. Simulation results also indicated that Ripple achieved throughput, stability, and QoS enhancement than that of 802.11 DCF under a highly loaded situation.     

WDM网络光层保护新算法的探讨

首先介绍了几种按照不同标准划分的WDM网络光层保护方法,然后提出了三种实现光层保护的新算法,对它们的内容和性能做了详细描述。按照提出的算法所求得的解,可以为WDM网络提供新的光层保护方式。     

YBa2Cu1-xCox(Cu1-yZny)2Oz体系的Co,Zn共同掺杂效应

本文报道通过对YBa₂Cu_1-xCo_x(Cu_1-yZn_y)₂O_z(0≤x,y≤0.1)体系晶体结构、氧含量、正常态电阻-温度关系、Hall效应以及超导临界温度等的综合测量,发现随着Co和Zn含量的增加,体系经历了从正交结构的超导金属向四方结构的非超导半导体的转变,超导临界温度T_c和载流子浓度n_h均迅速下降,Co 关键词：     

基于TC8830AF的智能语音卡结构与设计

本文描述一种基于８０３１单片机和ＴＣ８８３０ＡＦ语音处理器的ＰＣ机智能语音卡，通过软硬件设计解决了ＰＣ－８０３１－ＴＣ８８３０ＡＦ结构中的通讯问题。该语音卡在进行语音的合成、编辑和播放时，仅占用极少的ＰＣ机ＣＰＵ处理时间，能满足计算机系统进行实时语音合成的要求。     

High-frequency small signal AC and noise modeling of MOSFETs for RFIC design

High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and f_T characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

α,α′-二氧代烯酮环二氮代缩醛的NMR研究

报道了5种新的α，α′-二氧代烯酮环二氮代缩醛化合物的NMR谱，初步探讨了分子结构对化学位移的影响．