Dielectric effect on the rf characteristics of a helical groove travelling wave tube

A new type of partial-dielectric-loaded helical groove slow-wave structure (SWS) for millimetre wave travelling wave tube (TWT） is presented in this paper.The radio-frequency characteristics including the dispersion properties,the longitudinal electric field distribution and the beam-wave coupling impedance of this structure are analysed.The results show that the dispersion of the helical groove circuit is weakened,the phase velocity is reduced and the position of the maximum Ez is moved from the mouth to the inside of the groove after partially filling the dielectric materials in the helical groove SWS.Therefore,the dielectric-loaded helical groove SWS is suitable for a multi-beam TWT with broad band and high gain.     

给定拓扑结构的网络的可靠性设计

本文首先讨论了网络链路堵概率的加权平均值，提出了网络分配的一般准则，并在考虑了网络链路生存链路概率的因素后，提出了更一般的网络链路堵塞概率的加权平均值，以此为基础，分别讨论了网络在给定点的费用条件下，使得网络可靠性最大的网络设计问题，以及在给定网络可靠性指标的前提下，使得网络费用最小的网络设计问题。     

Quasi-saturation capacitance behavior of a DMOS device

This paper reports a simulation study on the capacitance characteristics of a double-diffused metal-oxide semiconductor (DMOS) device operating in the quasi-saturation region. From the analysis, the capacitance effect of the gate oxide upon the drift region cannot be modeled as an overlap capacitance, because the drain-gate/source-gate capacitances of the DMOS device may exceed the gate-oxide capacitance due to the larger voltage drop over the gate oxide than the change in the imposed gate bias when entering the quasi-saturation region. This effect can be the explanation for the plateau behavior in the gate charge plot during turn-on and turn-off of the DMOS device. Based on the small-signal equivalent capacitance model, the accumulated charge in the drift region below the gate oxide may thoroughly associate with the drain terminal in the prequasi-saturation region and with the source terminal in the quasi-saturation region     

Structure and magnetic properties of nanocrystalline ferromagnets (II)

The role of magnetoelastic coupling effects in nanocrystalline ferromagnets is investigated by means of high-field magnetization and Doppler-broadening spectrum measurements. For the nanocrystalline Fe_{73 5}Cu₁Nb₃Si_13.5B₉ alloy, the results show that the pinning effects resulting from the quasidislocation dipole intensely influence the movement of domain wall; by coupling with the magnetostriction the defects-induced stress fields determine the magnetic properties at the early stage of crystallization. In view of the effective anisotropy and magnetoelastic coupling energy the optimal annealing conditions of alloys are discussed.     

光刻胶灰化工艺与深亚微米线条的制作

随着器件尺寸的缩小，细线条的制作成为很关键的工艺，普通光学光刻已接近其分辨率的极限，而电子束光刻和Ｘ射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究，并应用此工艺进行了深亚微米线条的制作，在普通光学光刻机上制作出宽度小于０．２５μｍ细线条。我们已将此工艺成功地应用在深亚微米ＭＯＳＦＥＴ的制作中。     

印制板液态感光阻焊油墨的工艺控制

本文介绍印制板液态感光阻焊油墨的工艺流程、工艺控制，并对生产中较常出现的几种质量问题进行讨论，进而提出解决措施。     

基于可寻址分支分配器的CATV收费系统

给出了一种基于可寻址分支分配器的ＣＡＴＶ收费管理系统设计方案，并着重介绍了系统的工作原理及可寻址分支分配器的设计。     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

2—（4,6—二甲基—2—嘧啶巯基）乙酰芳胺的合成及其生物活性的初步研究

许多乙酰芳胺类化合物具有优异的生物活性，例如除草剂苯噻草胺，可抑制细胞生长和分裂，防除稻田中禾本科杂草［１］；杀菌剂甲霜灵可防治作物霜霉病［２］。本文将具有多种生物活性的嘧啶基团引入到乙酰芳胺结构中［３］，合成下列１０个未见文献报道的标题化合物Ⅰ，通...     

Solaris2.X操作系统上NFS的环境配置

本文描述了Ｓｏｌａｒｉｓ２．Ｘ操作系统上网络文件系统ＮＦＳ的特性及其环境配置，介绍了如何建立了ＮＦＳ服务器和ＮＦＳ客户机，从而实现了远程文件系统资源共享。