短毫米波和亚毫米波接收机的发展现状

本文概述了短毫米和亚毫米波接收机的发展现状，介绍了接收机的重要组成部件：混频器、振荡器和放大器的发展水平以及毫米波单片集成电路的现状，给出了接收机的最新性能指标。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

宽带接入的春天还有多远

中国宽带业务的发展面临诸多问题:内容建设严重滞后于网络建设、缺少盈利的“杀手”业务、服务水平尚未达到宽带需求、恶性竞争产生网络泡沫以及产业环境尚不完善等。要想改善现状,宽带接入建设应采取下列措施:借助政府力量、联合社会力量、准确定位市场、丰富接入手段以及加强技术培训等。     

K2O-ZnO-Al2O3-B2O3-SiO2系掺Cr3+透明莫来石微晶玻璃的研究

采用了X射线衍射、透射电镜和吸收光谱及荧光光谱技术研究了K2O－ZnO-Al2O3-B2O3－SiO2系掺Cr^3 玻璃的析晶性能和光谱。研究结果表明：在K2O－Al2O3-B2O3-SiO2系掺Cr^3 玻璃的基础上引入ZnO后，析晶性能明显改善；析晶温度降低，析出的纳米莫来石微晶均匀、规则；微晶玻璃的发光强度明显增强。     

Processor Utilization Bounds for Real-Time Systems With Precedence Constraints

This paper presents a novel approach to computing tight upper bounds on the processor utilization for general real-time systems where tasks are composed of subtasks and precedence constraints may exist among subtasks of the same task. By careful analysis of preemption effects among tasks, the problem is formulated as a set of linear programming (LP) problems. Observations are made to reduce the number of LP problem instances required to be solved, which greatly improves the computation time of the utilization bounds. Furthermore, additional constraints are allowed to be included under certain circumstances to improve the quality of the bounds.     

Design of a 3780-point IFFT processor for TDS-OFDM

This correspondence presents a design of 3780-point IFFT processor for TDS-OFDM terrestrial DTV transmitter using FPGA. It demonstrates the algorithm design and error analysis of the processor, which can achieve a throughput of 7.56M complex IFFT operations per second. This design meets the signal-to-quantization noise ratio requirement of the TDS-OFDM system. It consists of two FPGA and one dual-port RAM. The data stream pipeline algorithm is implemented     

一种智能化的键盘练习器

本文介绍了一个利用单片机研制的键盘操作练习器。它能完成健盘输入练习和输入水平测试二项功能。     

结构振动控制中压电阻尼技术研究—压电被动阻尼技术（一）

压电阻尼技术有两种类型：压电被动阻尼技术和压电主动阻尼技术。本文对其中的压电被动阻尼技术进行了研究，结果表明：通过给压电元件并联适当的外部电路，可使压电系统具有与粘弹阻尼材料及动力吸振器相似的物理特性。合理配置电路参数，可以实现最优阻尼比。     

Analysis of saltation characteristics of bed-load transport in flowing water

The study of bed-load transport is of great significance both in theory and in practice. This paper discusses the saltation of bed-load solid grains in flowing water. Experiments and theoretic analysis have been made by means of high-speed photographing and advanced data processing technique with a combined method based on mechanical and statistical theories. It indicates that the saltation is the main form of the bed-load transport under ordinary flowing conditions. In the meantime, taking successive saltation as the model of bed-load transport, systematic analysis has been made with regard to the kinematic properties and mechanism of saltation. The statistical analysis shows that the probability density functions of the relative height and length of saltation are in conformity with Γ-type distribution, while the probability density functions of the relative velocities of saltation are in conformity with the Gaussian distribution. The project supported by National Natural Science Foundation of China     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed