真空微电子荧光平板显示器件的实验研究

真空微电子荧光平板显示器件的实验研究刘杰明，李志能，陈秀峰（浙江大学信息与电子工程学系）关键词：真空微电子，反应离子刻蚀一、引言近十年来，随着真空微电子学的崛起，利用微细加工技术，使真空元器件集成化和高性能化已成为可能，一种新型场致发射阵列真空荧光平...     

The number of powers of 2 in a representation of large even integers II

It is proved that for any integerk≥ 54 000, there isN _k >0 depending onk only such that every even integer ≥N _k is a sum of two odd prime numbers andk powers of 2. Project partially supported by RGC Research Grant (No.HKU 7122/97P) and Post-Doctoral Fellowship of the University of Hong Kong.     

一种新颖的表面等离子谐振效应光波导水质传感技术

光学表面等离子谐振（ＳＰＲ）效应是一种很有效的水质检测技术，经过详细的理论推导，同了ＳＰＲ反射光强的普遍适用公式。在纯水与受污染水两种情况下，根据一些已知参数计算出结果。由计算结果数据一出的曲线比较表明，ＳＰＲ效应在两种情况下有明显差别，这也正是ＳＰＲ效应用于水质检测的理论根据。     

AlGaAs／GaAs HBT集成电路的CAD

介绍了一套用于ＡｌＧａＡｓ／ＧａＡｓＨＢＴ集成电路的ＣＡＤ软件，它可完成ＨＢＴ的器件模拟、模型参数提取及电路模拟。应用该软件对ＨＢＴ运算放大器进行了模拟，为电路的研制提供了依据。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

正交特征群

本文在证明了有限Ａｂｅ１群Ｇ与它的特征群Ｇ√存在同构的一个必要充分条件之后，构造了一类正交特征群，从而概括了相当一大类正交变换（它包括了离散付里叶变换、阿达玛变换、数论变换、Ｃｈｒｅｓｔｅｎｓｏｎ变换）这对构成有限域与整环上的正交变换具有指导作用。     

应用于生物医学的光声光谱技术的改进和实验研究

改进的光声光谱归一化技术，避免了普通的分光法归一化光声光谱技术中分束镜以及锁相放大器动态范围的影响和限制，实现宽光谱范围内准确的光谱测量。氙灯光源功率起伏用修正项修正，误差在5％以内，实现各次实验数据的可比性。     

一类稀疏效应下捕食┐被捕食者系统极限环的存在性和唯一性

本文研究捕食者种群具有线性密度制约的一类稀疏效应下捕食－被捕食者系统ｘ＝ｘ（ａｘ－ｃｘ３－ｂｙ），ｙ＝ｙ（－α＋βｘ－γｙ）．（＊）得到：（１）当Ａ１＜Ａ１，Ａ２＜Ａ２，Ａ３＞Ａ３时，系统（＊）在第一象限内存在极限环；（２）当Ａ２＜Ａ２，Ａ３＞Ａ３时，系统（＊）在第一象限内存在唯一极限环     

Nonlinear analysis of the ion-ripple laser with the longitudinal component of the ion-ripple field taken into consideration

Ion-ripple laser, which consists of a relativistic electron beam obliquely propagating through an ion-ripple in a plasma, is investigated by nonlinear numerical simulation. The influence of the component of the ion-ripple field parallel to the beam direction on beam-wave interaction is analyzed. The results show that the longitudinal component of the ion-ripple field has a considerable influence on ion-ripple laser. The operating parameters are also optimized.     

玻璃陶瓷材料中Tm3+离子红外到蓝色上转换发光

系统研究了PbF2+GeO2+WO3ⅩⅣTmF3玻璃陶瓷材料中,在近红外光(1.06μm)激发下,Tm3+离子的发光特性.实验中观测到Tm3+离子的两组峰值位置分别在20920cm-1和22173cm-1的蓝色上转换发光,并证实这两组上转换发光分别与吸收三个和四个光子有关,同时建立了上转换发光的模型.为了选择最佳掺杂浓度,详细地测量了Tm3+离子峰值为20920cm-1的蓝色上转换发光强度与TmF3浓度的关系.