Crystallographic report: Bis{[diacetyl‐bis(2,6‐isopropylphenylimine)]nickel(I)(µ‐chloro)}

The first α‐diimine nickel(I) complex having a chloro bridge is reported. The centrosymmetric dinuclear structure of {[ArN?C(Me)C(Me)?NAr]NiCl}₂[Ar?2,6?C₆H₃(i‐Pr)₂] features two chelating α‐diimine ligands and two bridged chlorine atoms, so that a distorted tetrahedral N₂Cl₂ coordination geometry for nickel results. Copyright © 2004 John Wiley & Sons, Ltd.     

Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

Single to 16-Channel Wavelength Conversion at 10 Gb/s Based on Cross-Gain Modulation of ASE Spectrum in SOA

A simple scheme for single to multi-channel wavelength conversion based on cross-gain modulation of amplified spontaneous emission (ASE) spectrum in semiconductor optical amplifier (SOA) is described. Single to 16-channel wavelength conversion at 10 Gb/s is first demonstrated without any additional probe lights, the modulation information carried by input signal could be converted into arbitrary many channels if only the demultiplexer with enough channels is exploited. Output performance and pattern effects are investigated experimentally.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

环境对MgB_2氧化过程中MgO晶须生长形状的影响

用扫描电镜研究了在 Mg B2 氧化过程中环境对 Mg O晶须生长形状的影响。仅有 Mg B2 时 ,在 80 0℃左右空气气氛中 ,可生长出纳米尺寸的 Mg O晶须。若把 Mg B2 添加到氧化铝陶瓷基体中 ,则生长成竹节状晶须。Mg O晶须生长形状的差别可能是由于氧浓度以及位错等因素造成的。     

Mid-infrared generation based on a periodically poled LiNbO3 optical parametric oscillator

We report a nanosecond Nd:YVO_4-pumped optical parametric oscillator (OPO) based on periodically poled LiNbO_3 (PPLN). Tuning is achieved in this experiment by varying the temperature and period of the PPLN. The design of double-pass singly resonant oscillator (DSRO) and confocal cavity enables the OPO threshold to be lowered considerably, resulting in a simple, compact, all-solid-state configuration with the mid-infrared idler powers of up to 466mW at 3.41μm.     

2,9-disubstituted 1,10-phenanthroline nickel complexes: Syntheses,characterization, and their ethylene oligomerization

Nickel complexes 1–4 ligated with 2,9-disubstituted-1,10-phenanthroline were synthesized and characterized by FT-IR spectra and elemental analysis. The molecular structure of complex 2 was confirmed by X-ray crystal diffraction analysis. Activated with methylaluminoxane (MAO), those complexes showed moderate activities for ethylene oligomerization. Published in Kinetika i Kataliz, 2007, Vol. 48, No. 5, pp. 710–714. This article was submitted by the authors in English.     

Linux系统防火墙技术的实现

防火墙是提供网络安全性的重要手段之一,Linux提供了实现防火墙技术的工具包.分析了Linux系统中常用的包过滤防火墙技术--IPchains和IPtables.这两种防火墙技术作为两种基本的包过滤工具,实际上使用的是内核中的信息表,将来自非信任源的不必要的信息过滤出去.与IPchains相比,IPtables信息包过滤系统是最新的解决方案,也是第一个集成到Linux内核的解决方案.在许多方面,IPtables比IPchains灵活,它允许管理员控制更多的细节,例如记录日志等级.     

基于经验数据的温室内的温湿度过程控制系统

针对温室内的温湿度过程控制中参数人工设定的困难和参数自设定的必要性,提出了一种新颖的基于经验数据的适用于温室内的温湿度过程控制系统.该系统硬件采用新型的数字式温湿度一体化传感器LTM8901.温湿度过程控制系统采用具有大容量Flash存储器的C8051F023微控制器,它可在1年时间内以小时为单位设定经验温湿度值,用于控制并记录实测值,实现在1年时间内完全自动控制,无须操作人员干预.具有数据可靠、安装简单、使用和维修方便的特点.