纳米4-H碳化硅薄膜的掺杂现象

对纳米晶SiC薄膜进行了P和B的掺杂,B掺杂效率比P高,其暗电导预前因子与激活能遵守Meyer-Neldel规则,并有反转Meyer-Neldel规则出现.掺杂效率比非晶态碳化硅薄膜高是纳米碳化硅薄膜的特点之一.非晶态中的隧穿和边界透射对输运有一定贡献.     

环上矩阵的广义Moore-Penrose逆

本文给出带有对合的有1的结合环上一类矩阵的广义Moore-Penrose逆存在的充要条件，而这类矩阵概括了左右主理想整环，单Artin环上所有矩阵。     

Tunneling Radiation of a Torus-Like Black Hole in Anti-de Sitter Space-Time

An extension of the Parikh-Wilczek's semi-classical quantum tunneling method, the tunneling radiation of the charged particle from a torus-like black hole is investigated. Difference from the uncharged mass-less particle, the geodesics of the charged massive particle tunneling from the black hole is not light-like, but determined by the phase velocity. The derived result shows that the tunneling rate depends on the emitted particle's energy and electric charge, and takes the same functional form as uncharged particle. It proves also that the exact emission spectrum is not strictly pure thermal, but is consistent with the underlying unitary theory. PACS Numbers: 04.70.Dy, 97.60.Lf, 05.30.Ch.     

非齐次微分方程两点边值问题正解的存在性及多重性

本文考虑一类非齐次微分方程的两点边值问题,得到了一些有关其正解存在性与多重性的精确条件．     

正相协列乘积和的重对数律与强大数律

证明了强平稳正相协列乘积和的重对数律与不同分布正相协列乘积和的强大数律,指出了部分和服从强大数律但乘积和未必服从强大数律这一事实,并讨论了定理2中一个条件的必要性．     

Influence of focusing depth on the microfabrication of waveguides inside silica glass by femtosecond laser direct writing

We studied the influence of focusing depth on the index change threshold and damage threshold of silica glass irradiated by a focused 120 fs laser beam. Both thresholds increased with the focusing depth. The aspect ratio of the waveguide cross section can be selected by changing the focusing depth. A 5 mm long waveguide was written at the depth of 2100 μm, which was single mode at 632.8 nm and exhibited propagation loss of 0.56 dB/cm. The refractive index change was calculated to be ∼2.47×10^-3. The influence of the focusing depth should be considered in multi-layer devices as shown in the fabrication of a 3×3 waveguide array. PACS 42.62.-b; 42.82.Et; 81.05.Kf     

线性σ-模型和在J/ψ→γpp的pp质量谱中观测到的增强现象

假定BES合作组在辐射衰变J/ψ→γ pp中观测到的pp,谱的增强是由于存在一个pp的分子态,用线性σ-模型计算了它的束缚能和寿命. 具体考虑了这种增强现象是由于pp可能形成一个S-波或P-波共振态, 并把计算结果和实验数据做了比较. 与氘核不同, 由于pp可以通过s-道湮没, 因此通过研究它的总宽度可以获得线性σ-模型及其相关问题的信息.     

化学镀镍合金在电子工业中的应用

对化学镀镍合金铁工艺和性能特性及其在电子工业中的应有委展现状作了评述。化学镀镍合金具有镀层均匀，适用基材广，结合力高，硬度高，优良的耐磨、耐蚀性，可焊性好和特殊的电磁性能等特性，在电子工业中获得了广泛的应用。文中着重介绍了化学镀镍合金在磁盘、电磁屏蔽、微电路、半导体、连接器及薄膜电阻上的应用情况。这些案例说明，合理应用化学镀镍合金技术，有利于提高电子元器件的质量，降低成本，促进技术进步。     

通信用VRLA蓄电池可靠性指标及计算探讨

在说明通信局（站）电源系统对VRLA蓄电池组可靠性要求的基础上，阐述了为了达到电信设备的电压、电流需求，通过串联或串并联构成电池组的单体VRLA蓄电池应达到的可靠性指标。在确定单体VRLA蓄电池应达到的可靠性指标。在确定单体VRLA蓄电池可靠性参数时，可通过现场使用调查或加速寿命试验的办法来求得。在单体VRLA蓄电池可靠性指标过低的情况下，可通过多种冗余连接方式来提高电池组的可靠性。