全文获取类型
收费全文 | 55361篇 |
免费 | 4437篇 |
国内免费 | 3502篇 |
专业分类
化学 | 29388篇 |
晶体学 | 510篇 |
力学 | 1460篇 |
综合类 | 264篇 |
数学 | 4131篇 |
物理学 | 11439篇 |
无线电 | 16108篇 |
出版年
2024年 | 108篇 |
2023年 | 647篇 |
2022年 | 922篇 |
2021年 | 1420篇 |
2020年 | 1192篇 |
2019年 | 1322篇 |
2018年 | 1195篇 |
2017年 | 1102篇 |
2016年 | 1855篇 |
2015年 | 1783篇 |
2014年 | 2337篇 |
2013年 | 3422篇 |
2012年 | 3856篇 |
2011年 | 4089篇 |
2010年 | 3000篇 |
2009年 | 3020篇 |
2008年 | 3862篇 |
2007年 | 3489篇 |
2006年 | 3383篇 |
2005年 | 2955篇 |
2004年 | 2674篇 |
2003年 | 2388篇 |
2002年 | 2400篇 |
2001年 | 1815篇 |
2000年 | 1481篇 |
1999年 | 1143篇 |
1998年 | 781篇 |
1997年 | 736篇 |
1996年 | 718篇 |
1995年 | 560篇 |
1994年 | 494篇 |
1993年 | 500篇 |
1992年 | 406篇 |
1991年 | 324篇 |
1990年 | 300篇 |
1989年 | 240篇 |
1988年 | 173篇 |
1987年 | 150篇 |
1986年 | 100篇 |
1985年 | 129篇 |
1984年 | 92篇 |
1983年 | 74篇 |
1982年 | 83篇 |
1981年 | 86篇 |
1980年 | 49篇 |
1979年 | 54篇 |
1978年 | 62篇 |
1976年 | 51篇 |
1975年 | 44篇 |
1974年 | 44篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
81.
Zhen‐Feng Chen Hong‐Li Zhou Hong Liang Yan Li Ren‐Gen Xiong Xiao‐Zeng You 《应用有机金属化学》2003,17(11):883-884
The centrosymmetric binuclear structure of [Pb2(H‐Norf)2(ONO2)4]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
82.
Mary E. Neubert DAVID G. ABDALLAH Jr Sandra S. Keast Julie M. Kim Soonnam Lee Ryan M. Stayshich Margaret E. Walsh Rolfe G. Petschek Shin-Tson Wu 《Liquid crystals》2003,30(6):711-731
New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.
Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature. 相似文献
Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature. 相似文献
83.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
84.
Chao-Chi Hong Jenn-Gwo Hwu 《Electron Device Letters, IEEE》2003,24(6):408-410
The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports. 相似文献
85.
Deale O.C. Ng K.T. Kim E.J. Lerman B.B. 《IEEE transactions on bio-medical engineering》1995,42(12):1208-1211
A high common mode voltage (Vcm) relative to earth ground is produced on the myocardium during the delivery of a defibrillator pulse and can generate a differential error signal when potential gradients are recorded with bipolar electrodes and isolation amplifiers. The error signal is proportional to Vcm, and therefore, a reduction in Vcm improves the accuracy of the potential gradient data. Experiments were conducted on 5 dogs to determine whether Vcm can be controlled using a bridge circuit. The bridge circuit consisted of a 5 kΩ power rheostat in parallel with the transthoracic resistance of the dog. The variable contact of the rheostat was connected to earth ground, and by adjusting the rheostat, Vcm on the myocardium could be varied. In each dog, 20 A shocks were delivered through stainless steel transthoracic electrodes. Point contact electrodes sutured to the epicardium were used to measure Vcm. It was determined that Vcm could be reduced to approximately zero at a given electrode on the heart. In addition, for the 5 dogs studied, the maximum measured Vcm on the heart was only 10% of the transthoracic voltage when the bridge circuit was balanced for an interior point in the heart 相似文献
86.
Joo-Wan Kim Byung Sung Kim Sangwook Nam Choong Woong Lee 《Antennas and Propagation, IEEE Transactions on》1996,44(7):996-999
To specify manufacturing tolerances of a reflector antenna, various errors such as random surface errors and misalignment errors must be considered at one time because superposition of the effects of those errors may not hold. Based on the Rahmat-Samii's formulation (1983), a method for computing efficiently the average power pattern of a reflector antenna with those errors is presented. Simulation results show that superposition of the effects of errors does not generally hold and demonstrate how those errors degrade the peak-gain and sidelobe levels 相似文献
87.
Young-Bae Seu Taeg-Kyeong Lim Chang-Jin Kim Sun-Chul Kang 《Tetrahedron: Asymmetry》1995,6(12):3009-3014
Optically active epoxy alcohol, (R)-2-butyryloxymethylglycidol3 which is the precursor of a tert-alcohol chiral building block was obtained in high enantiomeric purity, 98.7% e.e., by lipase-catalyzed asymmetric hydrolysis using a phosphate buffer and organic co-solvent system in 95% of chemical yield. 相似文献
88.
Ha J.H. Kim S.W. Seol Y.S. Park H.K. Choi S.H. 《Semiconductor Manufacturing, IEEE Transactions on》1996,9(2):289-291
The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF 6/Ar mixtures. It was found that while the plug loading effect is independent of varying SF6/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology 相似文献
89.
Sungwon Kim Zuo Wang Hagan D.J. Van Stryland E.W. Kobyakov A. Lederer F. Assanto G. 《Quantum Electronics, IEEE Journal of》1998,34(4):666-672
We demonstrate and compare two phase-insensitive all-optical transistors (AOT's) based on frequency-degenerate quadratic three-wave interactions. In particular, we demonstrate gain using KTP in a type II geometry. Both AOT's exploit the phase insensitivity inherent to three-wave parametric processes when only two fields are input, providing amplification of a small signal at the operating frequency via the interaction with a second-harmonic wave. The first scheme is based on successive up- and down-conversion (i.e., cascading) while the second relies on parametric down-conversion. We obtain gains of 5 and 160 in the two configurations, respectively, with a significant background and output coherent to the pump in the first case, no background and coherence between output and signal in the second 相似文献
90.
Dongwook Park Minnyeon Kim 《Quantum Electronics, IEEE Journal of》1996,32(8):1432-1440
This paper presents theoretical results on mode characteristics of surface-emitting (SE) lasers utilizing an active second-order grating section. Based on a coupled-mode approach, longitudinal modes and the associated space-harmonic transverse modes are calculated via a numerical technique. From these, the lasing-mode spectrum, near- and far-field patterns of the radiation mode, and the surface-emission power efficiency are obtained. Effects of the substrate reflector and the grating parameters are also investigated. Finally, comparisons are made with conventional, edge-emitting DFB lasers. The results indicate that with a suitable choice of structural parameter values, DFB SE lasers can be made to possess both the spectral discrimination of the conventional DFB lasers and the advantages of SE lasers at the same time and also that the second lowest longitudinal mode may be preferred over the fundamental longitudinal mode for many applications due to its symmetric field distribution 相似文献