Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs

The use of wet-chemical removal of native oxide in a sealed nitrogen ambient prior to deposition of metal on GaAs is shown to be an effective method of engineering the Schottky barrier height of the metal contacts. Due to its higher metal work function, a barrier height of 0.98 eV for Pt on n-type GaAs is demonstrated. This is considerably higher than the barrier height of conventionally processed TiPtAu contacts (0.78 eV). MES-FETs fabricated using PtAu bilayer contacts show reverse currents an order of magnitude lower than TiPtAu contacted companion devices, higher reverse breakdown voltages and much lower gate leakage. Utilizing this technology of oxide removal and the PtAu bilayer contact provides a much simpler method of enhancing the barrier height on re-type GaAs than other techniques such as counter-doping the near-surface or inserting an interfacial layer.     

Stabilisation mechanism for `supercritical? transferred-electron amplifiers

It is shown that a supercritical GaAs c.w. Gunn diode with a cathode doping notch and doping profile sloping upwards from the cathode to anode may act as a stabilised amplifier at high bias voltage. This profile is similar to that in many present-day devices, and may provide a more practical way of increasing the field uniformity so that the noise figure may be reduced, as described by Thim. It is suggested that this mode of operation may be more relevant to the operation of supercritical amplifiers than other stabilisation mechanisms involving large anode fields.     

Low-temperature plasma etching of GaAs,AlGaAs, and AlAs

Dry etching of compound semiconductors is becoming increasingly important as design ruler shrink for electronic devices. For photonic device applications, dry or plasma etching is used fin- device isolation, fine-line pattern transfer, and fabrication of optical quality interfaces. As has been well established for Si and W. plasma etching at reduced temperatures can provide superior critical dimension control and obviate the need for operating at high bias voltages that produce excessively energetic ion bombardment t. In this work, we explore low-temperature (–60 C to +60 C) etching of the compound semiconductors GaAs, AlGaAs, and AlAs, In addition to improving etch anisotropy, which provides critical dimension control, rye find thut processing at lower temperatures improves microuniformity and reduces loading effects. At high lemperaturcs, where larger samples are observed to etch more slowly than smaller pieces (loading effect), etching rates appear limited bv reactant transport to the wafer. In this regime, both microuniformity and macrouniformity arc poor. As the temperature is reduced, the etching rate becomes limited by surfitce processes us a residue containing the semiconductor elements, etchant gases, and residual background gases forms on the surface. hi this regime, the etch rare becomes independent of surface area and uniformity is improved.     

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds

Electron Cyclotron Resonance (ECR) discharges of CCl₂F₂ or PCl₃ have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min^–1 for 50 W (DC bias 308 V), 10 mTorr, 38 CCl₂F₂/2 O₂ plasmas. The etch rates fall rapidly with increasing pressure or increasing O₂-to-CCl₂F₂ ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl₃ discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min^–1 are possible with PCl₃ although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl₂F₂-based mixtures.     

Search for memory effects in methane hydrate: structure of water before hydrate formation and after hydrate decomposition

Neutron diffraction with HD isotope substitution has been used to study the formation and decomposition of the methane clathrate hydrate. Using this atomistic technique coupled with simultaneous gas consumption measurements, we have successfully tracked the formation of the sI methane hydrate from a water/gas mixture and then the subsequent decomposition of the hydrate from initiation to completion. These studies demonstrate that the application of neutron diffraction with simultaneous gas consumption measurements provides a powerful method for studying the clathrate hydrate crystal growth and decomposition. We have also used neutron diffraction to examine the water structure before the hydrate growth and after the hydrate decomposition. From the neutron-scattering curves and the empirical potential structure refinement analysis of the data, we find that there is no significant difference between the structure of water before the hydrate formation and the structure of water after the hydrate decomposition. Nor is there any significant change to the methane hydration shell. These results are discussed in the context of widely held views on the existence of memory effects after the hydrate decomposition.     

Organophosphorus chemistry. Part 19. Free-radical addition of dialkyl phosphites to polyfluoro-olefins

An improved procedure for the peroxide-catalysed addition of dialkyl phosphites to tetrafluoroethylene is described, and the reactions of diethylphosphite with chlorotrifluoroethylene, 1,1-difluoroethylene,perfluoropropene, and 3,3,3-trifluoropropene have been investigated and found to yield diethyl 2-chloro-1,1,2-trifluoroethylphosphonate, diethyl 2,2-difluoroethylphosphonate, an 80:20 mixture of diethyl 2$\text{H}$-hexafluoro-$\text{n}$-propylphosphonate and diethyl 1$\text{H}$-hexafluoropropyl-2-phosphonate, and diethyl 3,3,3-trifluoropropyl-1-phosphonate, respectively.     

Limit theorems for transient diffusions on the line

Summary LetX be a diffusion in natural scale on (0,1], with 1 reflecting, and letc(x)(H _x ) andv(x)var (H _x ), whereH _x =inf{t: X _t =x}. Let _x =sup{t:X _t =x}. The main results of this paper are firstly that (i)c is slowly varying; (ii) are all equivalent: and secondly that (v) are all equivalent, and are implied by the condition . Other partial results for more general limit theorems are proved, and new results on regular variation are established.     

Highly diastereoselective 1,3-dipolar cycloaddition reactions of trans-2-methylene-1,3-dithiolane 1,3-dioxide with 3-oxidopyridinium and 3-oxidopyrylium betaines: a route to the tropane skeleton

The C2-symmetric vinyl sulfoxide, trans-2-methylene-1,3-dithiolane 1,3-dioxide, was found to react with a range of 3-oxidopyridinium betaines (bearing different substituents on nitrogen) in high yield and with total diastereoselectivity. A 2.3:1 mixture of regioisomers was formed with all of the 3-oxidopyridinium betaines but the ratio was found to change over prolonged periods of time due to reversibility of the minor regioisomer. 3-Oxidopyridinium betaines bearing methyl substituents at either the 2- or 6-position were also tested in the cycloaddition process. Improved regioselectivity (8:1) and again high diastereoselectivity were observed with the betaine having an additional substituent at the 2-position, but with betaines having a substituent in the 6-position although high regioselectivity was observed (9.9:1), the major isomer was formed with low diastereoselectivity (5.5:4.4). The origin of the regio- and diastereo-selectivity with all the betaines is discussed. Finally, the C2-symmetric vinyl sulfoxide, trans-2-methylene-1,3-dithiolane 1,3-dioxide was reacted with an oxidopyrylium betaine in moderate yield. Good regioselectivity and moderate diastereoselectivity were observed.     

The holographic bubble chamber experiment and the determination of the effective charmed quark mass and theK-factor for hadronic charm production

In the first holographic bubble chamber experiment — the HOBC experiment — we have accumulated a total of 40000 holograms with particle interactions. We have determined the total charm pair cross section inpN collisions to be 23.3 _?7.7 ⁺¹⁰ μb and 3.6 _?1.7 ^+2.3 μb for 360 and 200 GeV/c incident protons respectively. We have assumed a linear dependence of the cross section on the atomic number of the target. This experiment has demonstrated the feasibility of holographic recording in small bubble chambers. Assuming that the charm cross section can be described by the standard QCD factorized expression with gluon fusion and quark-antiquark annihilation, we have used our measured charm cross sections with other measurements to determine the effective charmed quark mass to be 1.8 _?0.35 ^+0.25 GeV/c². TheK factor, which describes the importance of the higher order corrections, is calculated to be 9.8 _?6.9 ^+12.5 (See noted added in proof.)     

Oxidative rearrangements of isobenzofurans: studies toward the synthesis of the ajudazols

We present a new facet of isobenzofuran chemistry which allows for its efficient manipulation to generate biologically relevant entities. This methodology has been successfully applied toward the synthesis of ajudazol A.