Properties of holomorphic Wiener functions —skeleton,contraction, and local Taylor expansion

Summary We show that each holomorphic Wiener function has a skeleton which is intrinsic from several viewpoints. In particular, we study the topological aspects of the skeletons by using the local Taylor expansion for holomorphic Wiener functions.Supported in part by the Grant-in-Aid for Science Research 03740120 Min. Education     

Calculation of heat transfer and uniformity of chemical amplification during post-exposure bake

Heat transfer in a resist-coated silicon wafer using a bake process is theoretically evaluated by modeling the three-dimensional diffusion process, focusing on the controllability of the lithographic performance of chemically amplified resists. Six models of various ambient conditions are used. The proximity gap between the hotplate and the wafer is found to have a dominant influence on the heat transfer process for the whole system. Because the atmosphere near the wafer acts as a thermal diffusion buffer layer, no temperature gradient occurs in the resist, even when it is subjected to convective heat transfer from the resist surface. Experimental results obtained by X-ray lithography confirm the calculation results.     

Crosslinked poly(N-isopropylacrylamide) gel for electrophoretic separation and recovery of substances

Crosslinked poly(N-isopropylacrylamide) gel was tested on the feasibility for a preparative electrophoretic matrix. Horse heart myoglobin and bovine hemoglobin were well separated on the gel matrix electrophoretically by molecular sieving effect of the gel network. Relative mobilities of those proteins in the gel were larger than those in a crosslinked polyacrylamide gel of the same polymer concentration. After the separation, the protein-containing portion of the gel underwent swelling at 4°C and deswelling at 37°C, alternatively. As a result of the deswelling, each protein was recovered in a discharged solution out of the gel at almost 100% yield.     

980 nm compact optical isolators using Cd1-x-yMnxHgyTe single crystals for high power pumping laserdiodes

The author have developed compact optical isolators operating at 480 nm wavelength with an insertion loss of 1.0 dB, isolation of 30 dB, size of 4φ×4.5 mm and endurance against laser power of ~500 mW using Cd_1-x-yMn_xHg_yTe single crystals for the first time     

A 220-MHz pipelined 16-Mb BiCMOS SRAM with PLL proportionalself-timing generator

This 512 Kw×8 b×3 way synchronous BiCMOS SRAM uses a 2-stage wave-pipeline scheme, a PLL self-timing generator and a 0.4-μm BiCMOS process to achieve 220 MHz fully-random read/write operations with a GTL I/O interface. Newly developed circuit technologies include: 1) a zig-zag double word-line scheme, 2) a centered bit-line load layout scheme, and 3) a phase-locked-loop (PLL) with a multistage-tapped ring oscillator which generates a clock cycle proportional pulse (CCPP) and a clock edge lookahead pulse (CELP)     

Metallized ultra-shallow-junction device technology for sub-0.1μm gate MOSFET's

This paper describes a new ultra-thin SOI-CMOS structure offering reduced parasitic diffusion-layer resistance. It addresses ways to deal with the ultra-shallow junctions required by sub-0.1 μm MOSFET's. Based on a CVD tungsten process we experimentally investigate the characteristics of selectively grown tungsten used in the source and drain region made in SOI layers of various thicknesses ranging from 10 to 100 nm. We also investigate certain CMOS device characteristics. The SOI-CMOS structure, with low parasitic diffusion-layer resistance and good contact characteristics for ultra-shallow junction devices exhibits superior device performance and high scalability     

A light-transmitting two-dimensional photodetector array using a-Sipin photodiodes and poly-Si TFT's integrated on a transparent substrate

A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator     

The structure and maximal gain of CW-pumped GaP-AlGaP semiconductor Raman amplifier with tapers on both sides

GaP-AlGaP waveguide semiconductor Raman amplifiers (SRAs) tapered on both sides were fabricated by high-quality GaP-AlGaP liquid phase epitaxial growth using the temperature difference method with controlled vapor pressure (TDM-CVP), photolithography patterning, and reactive ion etching with PCl/sub 3/ gas. Although the finesse of the both-sides-tapered waveguide SRA is lower than previous values for straight or one-side-tapered waveguides, the CW-pumped gain was maximized, and a maximal gain of 4.2 dB was obtained. This letter presents the effect of tapered structures in SRA with CW pumping amplification.