Isothermal cis-trans isomerization behavior of polyacetylene films

Isothermal cis-trans isomerization behavior was studied by differential scanning calorimetry for conventional Shirakawa polyacetylene (S-PA) film and highly stretchable polyacetylene (hs-x) films synthesized using catalysts aged at high temperature. The rate of isomerization is slower for S-PA than for hs-x. Kinetic results of isomerization are analyzed by a stretched exponential function with exponent n (0 < n < 1), which is different from the previously assumed single exponential function. An activation energy of 31 kcal/mol was obtained for all the samples. © 1995 John Wiley & Sons, Inc.     

Excitation to symmetry forbidden vibronic levels in the 1B2u state by controlled electron impact on benzene

The ¹B_2u-¹A_1g fluorescence emission of benzene excited by controlled electron impact was measured in the 14 – 100 eV region. The optically forbidden 6° levels were preferentially, excited. This indicates that a non-dipole transition takes place under low-energy electron-molecule collisions.     

A new method to reconstruct three-dimensional spatial distribution function from radial distribution function in solvation structure

Three-dimensional spatial distribution function (SDF) of solvent is a fundamental quantity for analysis of solvation. However, its calculation has been very limited because long computational time is required. We here developed a novel and robust method to construct approximated SDFs of solvent sites from radial distribution functions. In this method, the expansion of SDFs in real solid harmonics around atoms of solute leads to a linear equation, from which SDFs are evaluated with reasonable computational time. This method is applied to the analysis of the solvation structure of liquid water, as an example. The successful results clearly show that this method is very powerful to investigate solvation structure.     

New structures of GaAlAs lateral-injection laser for low-threshold and single-mode operation

Two new structures of lateral-injection transverse junction stripe (TJS) lasers, in which the stripe geometry is formed by the double heterojunctions, have been developed. These lasers, the homojunction type and the single-heterojunction type, have a self-reverse-biased p-n junction for concentrating current into the narrow active region. The temperature dependence of the threshold current has been very much improved in one of the new structures, the homojunction type, and is fair compared with those of good conventional broad-contact lasers. The threshold current does not increase rapidly up to 350 K in the homojunction lasers. These lasers exhibit improved characteristics of low threshold, the single longitudinal mode oscillation as well as the single fundamental transverse-mode oscillation, and "kink-free" behavior in the current depedence of the light-output power.