A fast atom bombardment mass spectrometric analysis of crown ether complexes [1]

Analyses of crown ether complexes of alkali metal ions and characterization of the complexes formed inm-nitrobenzyl alcohol have been carried out by fast atom bombardment (FAB) mass spectrometry. By using m-nitrobenzyl alcohol as a matrix for measurements, the stoichiometry of the complexes was assessed on the basis of the observed FAB peaks. In addition, the formation of crown ether-alkali metal complexes at a 2 : 1 molar ratio was enhanced by increasing the ionic radius of the metal ion in agreement with previous observations. On these grounds, FAB mass spectrometry may provide a rapid means for investigation of the complexation behavior of crown ethers and the stoichiometry of the complexes.     

10-Gbit/s optical receiver using ICs with low-capacitance HBT technology

A 10-Gbit/s optical receiver is developed using low-capacitance HBT IC technology. The HBT allows a cutoff frequency of 45 GHz and a maximum oscillation frequency of 70 GHz. The receiver contains an automatic gain-control amplifier IC with a gain of 16 dB, a bandwidth of 10.7 GHz, and a decision-circuit IC with an ambiguity of 66 mVp-p at a data rate of 10 Gbit/s. The sensitivity of this receiver is -26.5 dBm at a bit error rate of 10^-9. Transmission over a 140-km fiber was achieved successfully.     

Hetergeneous-nucleation synthesis of monodisperse ε-cobalt nanoparticles using palladium seeds

Monodisperse bimetallic Pd–Co nanoparticles were prepared via a thermal decomposition of cobalt carbonyl using palladium seeds at the Pd/Co molar ratios 0.5%, 1%, and 5%. The heterogeneously nucleated nanoparticles without any size-selective precipitation are sufficiently uniform to self-assemble into ordered arrays. The as-synthesized nanoparticles are each a single crystal with a complex cubic structure called ε-Co. The presence of Pd seeds seems to improve the stability of Co nanoparticles against oxidation based on the results from time-dependent magnetization measurement.     

Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τ_s becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.     

0.25 μm gate length CMOS devices for cryogenic operation

Under cryogenic operation, a low V_th realizes a high speed performance at a greatly reduced power-supply voltage, which is the most attractive feature of Cryo-CMOS. It is very important in sub-0.25 μm Cryo-CMOS devices to reconcile the miniaturization and the low V_th. Double implanted MOSFET's technology was employed to achieve the low V_th while maintaining the short channel effects immunity. We have investigated both the DC characteristics and the speed performance of 0.25 μm gate length CMOS devices for cryogenic operation. The measured transconductances in the saturation region were 600 mS/mm for 0.2 μm gate length n-MOSFET's and 310 mS/mm for 0.25 μm gate length p-MOSFET's at 80 K. The propagation delay time in the fastest CMOS ring oscillator was 22.8 ps at V_dd=1 V at 80 K. The high speed performance at extremely low power-supply voltages has been experimentally demonstrated. The speed analysis suggests that the sub-l0 ps switching of Cryo-CMOS devices will be realized by reducing the parasitic capacitances and through further miniaturization down to 0.1 μm gate length or below     

A scheme of picosecond pulse shaping using gain saturationcharacteristics of semiconductor laser amplifiers

To obtain high power, well shaped picosecond pulses from gain-switched semiconductor lasers, the use of dynamic gain saturation characteristics of semiconductor laser amplifiers was investigated theoretically and experimentally. A configuration of a reflected-wave amplifier (RWA) with single-side external coupling is introduced for pulse shaping, which is found to be suitable for enhancing dynamic gain saturation. By a combination of a distributed feedback laser oscillator at 1.3 μm in wavelength and a reflected-wave amplifier of 400 μm cavity length with asymmetric facet reflectivities of 0.01% and 30%, single-mode optical pulses with almost no tailing, full width at half maximum of 15 ps, and peak power exceeding 50 mW were obtained without pulse broadening, despite the considerable tail structure of the incident pulse     

Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.     

Application of Automatic Chromatic Dispersion Compensation for Realization of All-Optical Network

We have studied the algorithm for the automatic chromatic dispersion compensation using bit error rate (BER) and Q-factor optimization for realization of dynamically reconfigurable all-optical network. We have made sure good performance using the compensation system by laboratory experiments.