Zn location in the W‐type hexagonal ferrite SrZnCoFe16O27

The title compound, SrZnCoFe₁₆O₂₇ (ZnCo‐W), strontium zinc cobalt hexadecairon oxide, crystallizes in space group P6₃/mmc, with the Sr atom at a site with symmetry and Zn²⁺ located at two tetrahedral sites (4e and 4f, each with 3m symmetry) of the spinel blocks. The Zn occupancy is 36% on equipoint 4e and 14% on 4f. The enrichment of diamagnetic ions on one of seven sublattices is thought to be responsible for the high temperature dependence of the saturation magnetization.     

Transient behavior of Hg1−xCdxTe films deposited on (100) CdTe substrates by chemical vapor transport

The growth history of Hg_1−xCd_xTe films deposited on (100) CdTe substrates by chemical vapor transport (CVT) has been studied, for the first time, by using a transient growth technique. The observed morphological evolution of Hg_1−xCd_xTe films deposited at 545°C shows a transition behavior from three-dimensional (3D) islands to two-dimensional (2D) layer growth. The experimental results indicate that the so-called critical time needed for the above morphological transition is about lh under present experimental conditions. Based on the chemical bonding properties of Hg_1−xCd_xTe, and on the behavior of the morphological transition, the Stranski-Krastanov growth mode is suggested for the epitaxial growth system. The time dependence of the growth thickness, of the growth rate (R₁₀₀) along the [100] direction, and of the surface composition all reveal a transient behavior. These are related to the nature of the Hg_1-xCd_xTe/ (100)CdTe heterojunction and to the surface reactions. Comparison of the growth rates and of the total mass deposited as a function of time shows the relationship between epitaxial growth and mass flux of the Hg_1−xCd_xTe-HgI₂ chemical vapor transport system.     

Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport

As part of a systematic investigation of the effects of substrate surfaces on epitaxial growth, the transient behavior of Hg_1−xCd_xTe film growth on (111)B CdTe by chemical vapor transport (CVT) has been studied as a function of growth time under vertical stabilizing (hot end on top) and vertical destabilizing (hot end at bottom) ampoule orientations. The experim ental results show the morphological transition of the Hg_1−xCd_xTe deposition on (111)B CdTe at 545°C from three-dimensional islands to layers within about 0.5 and 0.75 h for the growth under vertical stabilizing and destabilizing conditions, respectively. The combined effects of small convective flow disturbances on the growth morphology and defect formation are measurable. The overall trends of the time dependent growth rates and compositions of the Hg_1−xCd_xTe epitaxial layers under stabilizing and destabilizing conditions are similar. The system atically higher growth rates of the Hg_1−xCd_xTe films by about 10% under vertical destabilizing conditions could be influenced by a small convective contribution to the mass transport. The combined results show that improved Hg_1−xCd_xTe epitaxial layers of low twin density on (111)B CdTe substrates can be obtained by CVT under vertical stabilizing conditions.     

At-line determination of formaldehyde in bioprocesses by sequential injection analysis

A sequential injection analysis (SIA) method for the at-line determination of formaldehyde in a cultivation process of Pichia pastoris is presented. A genetically modified yeast strain was used for cultivation processes wherein methanol feed induced the production of the recombinant protein 1-3del I-TAC. Recurring measurements of culture medium, its blank and including standard addition were performed with Nash reagent using an automated syringe device and photometric detection. The apparatus was coupled via a laboratory-made flow-through adapter to a continuous filtered and cell-medium flow from the bioreactor. At-line monitoring of formaldehyde was performed at two cultivations, each of 250 h during fed-batch phases with glycerol and methanol as carbon sources. High reliability, robustness and reproducibility of the method, the software and the instrumentation as well as the high selectivity of the reaction were demonstrated.     

Novel correlation of Schottky constants with lattice energies for II-VI and I-VII compounds

Correlations of computed Schottky constants () with structural and thermodynamic properties showed linear dependences of log K_S on the lattice energies for the Zn-, Cd-, Hg-, Mg-, and Sr-chalcogenides and for the Na- and K-halides. These findings suggest a basic relation between the Schottky constants and the lattice energies for these families of compounds from different parts of the Periodic Table, namely, =−(2.303nRT log K_S)+2.303nRm_b+2.303nRTi_b. is the experimental (Born-Haber) lattice energy (enthalpy), n is a constant approximately equal to the formal valence (charge) of the material, m_b and i_b are the slope and intercept, respectively, of the intercept b (of the log K_S versus linear relation) versus the reciprocal temperature. The results of this work also provide an empirical correlation between the Gibbs free energy of vacancy formation and the lattice energy.