Controller for digital audio power amplifier with bit stream input

A new controller for a digital audio amplifier with bit stream input is proposed. The proposed controller has excellent features such as wide error correction range and no limitation on the modulation index. The controller is implemented in the half-bridge class-D amplifier and performance is verified through experiments.     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

Electrotunable Non‐reciprocal Laser Emission from a Liquid‐Crystal Photonic Device

A liquid crystal (LC) photonic device with an anisotropic optical heterojunction structure has been fabricated. The device has a phase‐retarding nematic LC (NLC) layer sandwiched between two polymer cholesteric LC films with right‐handed helices of different pitches. Electrotunable non‐reciprocal light transmittance and unidirectional circularly polarized (CP) lasing emission have been successfully demonstrated for this device structure. Two left CP (LCP) lasing emission peaks are observed at the edges of the overlapping region between the two photonic bands in the structure and are shifted upon the application of a voltage. In contrast, a non‐reciprocal right CP (RCP) lasing emission peak emerges at one of the band edges and diminishes upon the application of a voltage. These phenomena are interpreted based on the selective reflection of RCP light and the reorientation of the NLC molecules by the application of a voltage.     

A fiber depolarizer using polarization beam splitter loop structure for narrow linewidth light source

A new fiber depolarizer employing a polarization beam splitter loop structure is proposed and demonstrated. The depolarizer is devised for broad-band operation and the depolarization of narrow linewidth light source without any help of polarization controllers or Faraday rotator mirrors. A polarizing method is developed that shows good performance without polarization control unit. Therefore, the proposed depolarizer can be cost-effective and easily configured. From experiments, low output degree of polarization less than 10% is obtained for a narrow linewidth light source.     

Parasitic-aware RF circuit design and optimization

RF circuit synthesis techniques based on particle swarm optimization and adaptive simulated annealing with tunneling are described, and comparisons of parasitic-aware designs of an RF distributed amplifier and a nonlinear power amplifier are presented. Synthesized in 0.35-/spl mu/m digital CMOS using a single 3.3-V power supply, the designs provide an 8-dB gain and 8-GHz bandwidth for a four-stage distributed amplifier, and 1.2-W output power with 55% drain efficiency at 900 MHz for a three-stage power amplifier. A standard circuit simulator, HSPICE or SPECTRE, embedded in an optimization loop is used to evaluate cost functions. The proposed design and optimization methodology is computationally efficient and robust in searching complex multidimensional design spaces.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.     

2.488 Gb/s-318 km repeaterless transmission using erbium-dopedfiber amplifiers in a direct-detection system

The authors have achieved a 2.488 Gb/s, 318 km repeaterless transmission without any fiber dispersion penalty through a nondispersion-shifted fiber in a direct detection system. The system was loss limited with a T-R power budget of 57 dB. Three key components enabled the authors to achieve this result: (1) a Ti:LiNbO₃ external amplitude modulator enabling a dispersion-free transmission, (2) erbium-doped fiber amplifiers increasing the transmitting power to +16 dBm, and (3) an erbium-doped fiber preamplifier enabling a high-receiver sensitivity of -4.1 dBm for 10^-9 BER. To the author's knowledge, this result is the longest repeaterless transmission span length ever reported for direct detection at this bit rate. From the experimental results and a theoretical model, the authors identified the sources of the receiver sensitivity degradation from the quantum limit (-48.6 dBm) and estimated the practically achievable receiver sensitivity of ~-44 dBm (~-124 photons/bit) for 2.5 Gb/s optical preamplifier detection     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.     

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which become crucial for short gate length device performance maximization. Adopting a self-aligned T-gate architecture is one method used to reduce parasitic device access resistance, but at the cost of increasing parasitic gate fringing capacitances. As the device gate length is then reduced, the benefits of the self-aligned gate process come into question, as at these ultrashort-gate dimensions, the magnitude of the static fringing capacitances will have a greater impact on performance. To better understand the influence of these issues on the dc and RF performance of short gate length InP pHEMTs, the authors present a comparison between In_0.7Ga_0.3As channel 50-nm self-aligned and "standard" T-gate devices. Figures of merit for these devices include transconductance greater than 1.9 S/mm, drive current in the range 1.4 A/mm, and fT up to 490 GHz. Simulation of the parasitic capacitances associated with the self-aligned gate structure then leads a discussion concerning the realistic benefits of incorporating the self-aligned gate process into a sub-50-nm HEMT system