Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

Eigen filter to detect volitional EMG signals in autogenic EMG-controlled FES

Presented is an eigen filter to remove autogenic electrical stimulation artefacts and M-waves while preserving the volitional electromyographic signal. The optimality of the eigen filter is shown, along with simulated and measured data to indicate its superior performance over conventional prediction error filters.     

Preparation of antimicrobial poly(vinyl alcohol) nanofibers containing silver nanoparticles

Polyvinyl alcohol (PVA) nanofibers containing Ag nanoparticles were prepared by electrospinning PVA/silver nitrate (AgNO₃) aqueous solutions, followed by short heat treatment, and their antimicrobial activity was investigated for wound dressing applications. Since PVA is a water soluble and biocompatible polymer, it is one of the best materials for the preparation of wound dressing nanofibers. After heat treatment at 155 °C for 3 min, the PVA/AgNO₃ nanofibers became insoluble, while the Ag⁺ ions therein were reduced so as to produce a large number of Ag nanoparticles situated preferentially on their surface. The residual Ag⁺ ions were reduced by subsequent UV irradiation for 3 h. The average diameter of the Ag nanoparticles after the heat treatment was 5.9 nm and this value increased slightly to 6.3 nm after UV irradiation. It was found that most of the Ag⁺ ions were reduced by the simple heat treatment. The PVA nanofibers containing Ag nanoparticles showed very strong antimicrobial activity. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2468–2474, 2006     

Analyses of the practical adhesion strengths of the metal/polymer interfaces in electronic packaging

There is a plethora of techniques to measure the adhesion strength of metal/polymer interfaces. However, the practical adhesion strength, which is the work done in separating the film from the substrate (or one film from another), is very sensitive to the test methods and the mechanical effects, such as the residual stress, thickness and mechanical properties of the layers, strain rate, and phase angle. Deriving intrinsic-adhesion properties of the interfaces, which are independent of such parameters, from the practical adhesion-strength measurements is a formidable task. In the present work, data from the three commonly used adhesion tests; pull-out, 90°-peel, and T-peel tests are compared with the intrinsic-adhesion properties of the interface, such as the interface-fracture toughness or the interface-fracture energy, and their implications are discussed. Material systems analyzed were Cu-based lead frame/epoxy-molding compound (EMC) and Cu/Cr/polyimide.     

Interaction of metals with an organic semiconductor: Ag and In on PTCDA

The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π^* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π^* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.     

Synchronization of a class of chaotic dynamic systems with controller gain variations

In this paper, the nonfragile control problem for synchronization of a class of chaotic dynamical systems with controller gain variations is studied. Using the Lyapunov method and LMI (linear matrix inequality) technique, a criterion for the existence of the nonfragile controller for synchronization is derived in terms of LMI. To show the effectiveness of the proposed method, the control problem is applied to Genesio chaotic system.     

High-pressure effect on the crystal and magnetic structure of LuMnO3: Correlation between a distortion of the triangular lattice and the symmetry of the magnetic state in hexagonal frustrated manganites

The effect of a high pressure (up to 6 GPa) on the crystal and magnetic structure of the hexagonal manganite LuMnO₃ is studied by neutron diffraction in the temperature range 10–295 K. It is found that, as the pressure increases, the ordered magnetic moment of Mn ions at T = 10 K decreases noticeably from 2.48 (0 GPa) to 1.98 μ_B (6 GPa). This decrease is due to an enhancement of the geometrical frustration effects on the triangular lattice. At the same time, the symmetry of the triangular antiferromagnetic state (the irreducible representation Γ₂) remains unchanged. A correlation is revealed between the distortion parameter of the triangular lattice formed by Mn ions and the symmetry of the antiferromagnetic state of hexagonal manganites RMnO₃. Based on this correlation, a generalized magnetic phase diagram of these compounds is constructed. The obtained phase diagram provides an explanation for the changes observed in the magnetic state of hexagonal manganites caused by high pressure and chemical substitution.     

Vertex-based inter-frame boundary encoding scheme

The boundary is approximated by a polygon which can be encoded with the smallest number of bits for maximum distortion. The temporal redundancy between two successive frames is efficiently removed with the proposed scheme, resulting in a lower bit rate than the conventional algorithms     

0.2 μm AlSb/InAs HEMTs with 5 V gate breakdown voltage

DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 μm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an f_T of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of f_max is examined indicating a significant reduction in the unilateral gain due to impact ionisation