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151.
Sum-frequency-generation (SFG) vibration spectroscopy is a technique only sensitive to functional groups arranged without centrosymmetry. For crystalline cellulose, SFG can detect the C6H2 and intra-chain hydrogen-bonded OH groups in the crystal. The geometries of these groups are sensitive to the hydrogen bonding network that stabilizes each cellulose polymorph. Therefore, SFG can distinguish cellulose polymorphs (Iβ, II, IIII and IIIII) which have different conformations of the exocyclic hydroxymethylene group or directionalities of glucan chains. The C6H2 asymmetric stretching peaks at 2,944 cm?1 for cellulose Iβ and 2,960 cm?1 for cellulose II, IIII and IIIII corresponds to the trans-gauche (tg) and gauche-trans (gt) conformation, respectively. The SFG intensity of the stretch peak of intra-chain hydrogen-bonded O–H group implies that the chain arrangement in cellulose crystal is parallel in Iβ and IIII, and antiparallel in II and IIIII.  相似文献   
152.
This article addresses the dynamic output feedback consensus problem of continuous‐time networked multiagent systems. Both a fixed topology and Markovian switching topologies are considered. The consensus algorithms are on the base of the output information of each agent's itself and its neighbors. Some sufficient conditions for consensus of multiagent systems are obtained in forms of bilinear matrix inequalities. The algorithm based on the homotopy continuation method is given to compute the feasible controller gains. Numerical simulations are given to show the effectiveness of the proposed results. © 2014 Wiley Periodicals, Inc. Complexity 20: 35–42, 2015  相似文献   
153.
A novel reaction-based probe for the dual signaling of hydrogen sulfide (H2S) was investigated. The selective H2S-induced cleavage of the ether linkage of the 7-nitro-2,1,3-benzoxadiazole (NBD) and 7-hydroxycoumarin conjugate resulted in a dual signaling behavior. The colorimetric and fluorogenic signaling behaviors were attributed to the H2S-induced generation of 7-nitrobenzo-2,1,3-oxadiazole-4-thiol (NBD-SH) and 7-hydroxycoumarin, respectively. The signaling behavior was analyzed by ratiometry. The selective signaling of H2S over other common metal ions and anions was possible with a detection limit of 1.6 × 10−6 M in an aqueous DMSO solution.  相似文献   
154.
A new method of surface microscopy is proposed, which combines three-dimensional electron spin resonance imaging by magnetic resonance force microscopy (MRFM) and topographic imaging of the sample surface by scanning force microscopy (SFM). In order to demonstrate its potential for the identification of microscale objects, the individual and combined images are used to provide the locations, shapes and spin density distributions of target phantom objects. We report spatial resolution in MRFM of 2.8 x 2.8 x 2.0 microm(3). This could be improved to the theoretical limit of 0.08 x 0.08 x 0.04 microm(3) through reduction of the thermal noise by cooling to cryogenic temperatures approximately 0.5K. We believe that this type of microscopy will become a very useful tool for the investigation of anomalies induced in surfaces by materials buried below the surface.  相似文献   
155.
Park YS  Wang H 《Optics letters》2007,32(21):3104-3106
Regenerative pulsation from whispering gallery modes excited by a continuous-wave laser beam is observed in silica microspheres that feature a diminishing thermal nonlinearity near 20 K. The regenerative pulsation arises from the competition between Kerr nonlinearity and the much reduced thermal nonlinearity, when the two nonlinearities with very different timescales are comparable in magnitude but opposite in sign.  相似文献   
156.
We have fabricated a solution-processed ZnO thin-film transistor without vacuum deposition. ZnO nanoparticles were prepared by the polyol method from zinc acetate, polyvinyl pyrrolidone, and diethyleneglycol. The solution-processable semiconductor ink was prepared by dispersing the synthesized ZnO in a solvent. Inverted stagger type thin-film transistors were fabricated by spin casting the ZnO ink on the heavily doped Si wafer with 200 nm thick SiO2, followed by evaporation of Cr/Au source and drain electrodes. After the drying and heat treatment at 600 C, a relatively dense ZnO film was obtained. The film characteristics were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In order to obtain the electrical properties of the solution-derived transistor, the on–off ratio, threshold voltage, and mobility were measured.  相似文献   
157.
High‐temperature‐induced and humidity‐induced degradation behaviors were investigated through the failure analysis of encapsulated Cu(In,Ga)Se2 (CIGS) modules and non‐encapsulated CIGS cells. After being exposed to high temperature (85 °C) for 1000 h, the efficiency loss of CIGS modules and the resistivities of the aluminum‐doped zinc oxide (AZO) layer, CIGS layer, and Mo layer were slightly increased. After damp heat (DH) testing (85 °C/85% RH), the efficiency of some modules decreased significantly accompanied by discoloration, and in these areas, the resistivity of the AZO layers increased markedly. The causes of degradation of CIGS cells after high temperature and DH tests were suggested through X‐ray photoelectron spectroscopy analysis. The high‐temperature‐induced degradation behaviors were revealed to be increases in series resistance of the CIGS cells, due to the adsorption of oxygen on the AZO, CIGS, and Mo layers. The degradation behavior after DH (85 °C/85% RH) exposure was caused by the adsorption of oxygen, as well as the generation of Zn(OH)2 due to water molecules. In particular, the humidity‐induced degradation behavior in discolored CIGS modules was ascribed to the generation of Zn(OH)2 and carboxylic acids in the AZO layer, due to a chemical reaction between the AZO, ethylene‐vinyl acetate copolymer, and water. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
158.
Thin‐film solar cells consisting of earth‐abundant and non‐toxic materials were made from pulsed chemical vapor deposition (pulsed‐CVD) of SnS as the p‐type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n‐type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post‐deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
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