Modeling and measurement of simultaneous switching noise coupling through signal via transition

The signal via is a heavily utilized interconnection structure in high-density System-on-Package (SoP) substrates and printed circuit boards (PCBs). Vias facilitate complicated routings in these multilayer structures. Significant simultaneous switching noise (SSN) coupling occurs through the signal via transition when the signal via suffers return current interruption caused by reference plane exchange. The coupled SSN decreases noise and timing margins of digital and analog circuits, resulting in reduction of achievable jitter performance, bit error ratio (BER), and system reliability. We introduce a modeling method to estimate SSN coupling based on a balanced transmission line matrix (TLM) method. The proposed modeling method is successfully verified by a series of time-domain and frequency-domain measurements of several via transition structures. First, it is clearly verified that SSN coupling causes considerable clock waveform distortion, increases jitter and noise, and reduces margins in pseudorandom bit sequence (PRBS) eye patterns. We also note that the major frequency spectrum component of the coupled noise is one of the plane pair resonance frequencies in the PCB power/ground pair. Furthermore, we demonstrate that the amount of SSN noise coupling is strongly dependent not only on the position of the signal via, but also on the layer configuration of the multilayer PCB. Finally, we have successfully proposed and confirmed a design methodology to minimize the SSN coupling based on an optimal via positioning approach.     

Performance analysis of channel estimation for OFDM systems with residual timing offset

The authors present an analysis of the effect of timing offset on channel estimation for comb-type pilot-aided orthogonal frequency division multiplexing (OFDM) systems. Residual timing offset does not negatively affect the channel estimation of the pilot subcarrier, but does corrupt the channel information obtained via interpolation. This paper provides the mean square error (MSE) channel estimation performance when a linear interpolation technique is used in a comb-type pilot-aided OFDM system. Analysis shows that the performance degradation of the channel estimator due to imperfect frame synchronization is dependent on the frequency correlation of the channels and the amount of timing offset     

Intramitochondrial co-assembly between ATP and nucleopeptides induces cancer cell apoptosis

Mitochondria are essential intracellular organelles involved in many cellular processes, especially adenosine triphosphate (ATP) production. Since cancer cells require high ATP levels for proliferation, ATP elimination can be a unique target for cancer growth inhibition. We describe a newly developed mitochondria-targeting nucleopeptide (MNP) that sequesters ATP by self-assembling with ATP inside mitochondria. MNP interacts strongly with ATP through electrostatic and hydrogen bonding interactions. MNP exhibits higher binding affinity for ATP (−637.5 kJ mol⁻¹) than for adenosine diphosphate (ADP) (−578.2 kJ mol⁻¹). To improve anticancer efficacy, the small-sized MNP/ADP complex formed large assemblies with ATP inside cancer cell mitochondria. ATP sequestration and formation of large assemblies of the MNP/ADP–ATP complex inside mitochondria caused physical stress by large structures and metabolic disorders in cancer cells, leading to apoptosis. This work illustrates a facile approach to developing cancer therapeutics that relies on molecular assemblies.

Mitochondria-targeting nucleopeptide (MNP) can sequester ATP by self-assembling with ATP. A small nanosized MNP/ADP complex forms a large assembly with ATP. Thus, intramitochondrial co-assembly causes stress by large structures and apoptosis.     

High‐Performance Sodium‐Ion Hybrid Supercapacitor Based on Nb2O5@Carbon Core–Shell Nanoparticles and Reduced Graphene Oxide Nanocomposites

Sodium‐ion hybrid supercapacitors (Na‐HSCs) have potential for mid‐ to large‐scale energy storage applications because of their high energy/power densities, long cycle life, and the low cost of sodium. However, one of the obstacles to developing Na‐HSCs is the imbalance of kinetics from different charge storage mechanisms between the sluggish faradaic anode and the rapid non‐faradaic capacitive cathode. Thus, to develop high‐power Na‐HSC anode materials, this paper presents the facile synthesis of nanocomposites comprising Nb₂O₅@Carbon core–shell nanoparticles (Nb₂O₅@C NPs) and reduced graphene oxide (rGO), and an analysis of their electrochemical performance with respect to various weight ratios of Nb₂O₅@C NPs to rGO (e.g., Nb₂O₅@C, Nb₂O₅@C/rGO‐70, ‐50, and ‐30). In a Na half‐cell configuration, the Nb₂O₅@C/rGO‐50 shows highly reversible capacity of ≈285 mA h g^?1 at 0.025 A g^?1 in the potential range of 0.01–3.0 V (vs Na/Na⁺). In addition, the Na‐HSC using the Nb₂O₅@C/rGO‐50 anode and activated carbon (MSP‐20) cathode delivers high energy/power densities (≈76 W h kg^?1 and ≈20 800 W kg^?1) with a stable cycle life in the potential range of 1.0–4.3 V. The energy and power densities of the Na‐HSC developed in this study are higher than those of similar Li‐ and Na‐HSCs previously reported.     

Dual-wavelength cascaded Raman fibre laser

Dual-wavelength lasing at 1480 and 1500 nm has been demonstrated from a cascaded Raman fibre laser with a WDM coupler and two pairs of Bragg gratings. Intensity-adjustable, wavelength-tunable laser operation was achieved by tensile stress wavelength tuning of the gratings     

Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly(methyl methacrylate) gate insulator

The electrical properties of top-contact pentacene thin-film transistors (TFTs) with a poly(methyl methacrylate) (PMMA) gate dielectric were analyzed in air and vacuum environments. Compared to the vacuum case, the pentacene TFT in air exhibited lower drain currents and more pronounced shifts in the threshold voltage upon reversal of the gate voltage sweep direction, together with a decrease in the field-effect mobility. These characteristic variations were explained in terms of two distinctive actions of polar H₂O molecules in pentacene TFT. H₂O molecules were suggested to diffuse under the source and drain contacts and interrupt the charge injection into the pentacene film, whereas those that permeate at the pentacene/PMMA interface retard hole depletion in and around the TFT channel. The diffusion process was much slower than the permeation process. The degraded TFT characteristics in air could be recovered mostly by storing the device under vacuum, which suggests that the air instability of TFTs is due mainly to the physical adsorption of H₂O molecules within the pentacene film.     

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al–Sn–Zn–In–O (a-AT-ZIO) channel deposited by cosputtering using a dual Al–Zn–O and In–Sn–O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ hbox{cm}^{2}/hbox{V}cdothbox{s}$, an excellent subthreshold gate swing of 0.07 V/decade, and a high $I_{{rm on}/{rm off}}$ ratio of $≫hbox{10}^{9}$, even below the process temperature of 250 $^{circ}hbox{C}$. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived $hbox{Al}_{2} hbox{O}_{3}$ thin film.      

A formation of cobalt silicide on silicon field emitter arrays byelectrical stress

A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10^-8 torr     

Computing the Average Symbol Error Probability of the MPSK System Having Quadrature Error

When quadrature error exists, the shape of the M‐ary phase shift keying (MPSK) signal constellation becomes skewed‐elliptic. Each MPSK symbol takes on a different symbol error probability (SEP) value. The analytical results presented thus far have been derived from studies which examined the SEP problem assuming that the SEP of each MPSK symbol is equally likely; therefore, those results should not be treated as offering a complete solution. In this letter, we present a new and more complete solution to the SEP problem of MPSK by relaxing the above assumption and finding the expressions for the average as well as individual SEP in the presence of quadrature error.