Using multi-exposure of color fringes to measure the beating motion of a moth

A multi-exposure of color fringes method has been developed to improve the capture speed of a conventional color CCD camera. In the method, four groups of projected fringe patterns encoded with different colors and different directions are stored in one CCD frame. Therefore the capture frequency of the conventional CCD can be improved to 200 Hz. It is available to measure the insect wings with low beating frequency, such as dragonfly, moth, or butterfly, whose beating frequency is about 30–40 Hz. We have used the method to measure the beating motion of a moth successfully.     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002     

入侵检测及网络层安全的研究

随着计算机网络的迅速发展，网络安全问题正变得日益重要。文章介绍了计算机网络系统IP层安全概况和入侵者对IP层常采用的入侵手段，以及为防止这种入侵所采取的措施。     

Investigation of the source/drain asymmetric effects due to gate misalignment in planar double-gate MOSFETs

A planar double-gate SOI MOSFET (DG-SOI) with thin channel and thick source/drain (S/D) was successfully fabricated. Using both experimental data and simulation results, the S/D asymmetric effect induced by gate misalignment was studied. For a misaligned DG-SOI, there is gate nonoverlapped region on one side and extra gate overlapped region on the other side. The nonoverlapped region introduces extra series resistance and weakly controlled channel, while the extra overlapped region introduces additional overlap capacitance and gate leakage current. We compared two cases: bottom gate shift to source side (DG/spl I.bar/S) and bottom gate shift to drain side (DG/spl I.bar/D). At the same gate misalignment value, DG/spl I.bar/S resulted in a larger drain-induced barrier lowering effect and smaller overlap capacitance at drain side than DG/spl I.bar/D. Because of reduced drain-side capacitance, the speed of three-stage ring oscillator of DG/spl I.bar/S, with 20% gate misalignment length (L/sub mis/) over gate length (L/sub g/), or L/sub mis//L/sub g/=20%, was faster than that of two-gate aligned DG-SOI.     

天津通信企业IT信息网络支撑平台

从系统建设背景、关键技术、创新点及应用情况等方面介绍了天津市通信公司企业IT信息网络支撑平台是一个统一、高效、简洁的综合业务网络平台。     

无线技术的新领域--WUSB

无线USB(WUSB)技术是一个全新的无线传输标准.实现USB(通用串行总线)无线化以后,既可以保持有线USB的高速传输等优点,又可以去掉电缆的羁绊,给各种设备带来更大的便捷和移动性.文中首先介绍了WUSB技术的由来--UWB技术规范的标准化难以确定,然后对WUSB技术的规范标准进行了阐述,最后概述了WUSB技术的发展现状及目前和今后的技术研发重点,并对WUSB的发展前景进行了展望.     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.     

A Multiobjective Hybrid Metaheuristic Approach for GIS-based Spatial Zoning Model

This paper presents a multiobjective hybrid metaheuristic approach for an intelligent spatial zoning model in order to draw territory line for geographical or spatial zone for the purpose of space control. The model employs a Geographic Information System (GIS) and uses multiobjective combinatorial optimization techniques as its components. The proposed hybrid metaheuristic consists of the symbiosis between tabu search and scatter search method and it is used heuristically to generate non-dominated alternatives. The approach works with a set of current solution, which through manipulation of weights are optimized towards the non-dominated frontier while at the same time, seek to disperse over the frontier by a strategic oscillation concept. The general procedure and its algorithms are given as well as its implementation in the GIS environment. The computation has resulted in tremendous improvements in spatial zoning.     

现代电子产品焊接质量的检测技术

介绍了现代电子产品焊接质量的检测技术,以及用于检查焊点质量和组装板(SMA)功能的测试仪器的工作原理及测试能力.目前常见和广泛使用的焊接质量检测方法是人工目测检查,其主要问题是其主观性,只能用来检测电子元件的形状、尺寸、颜色、表面特征及焊点的外观质量;自动光学检测(AOI)可以在整个过程中发现和纠正缺陷,但只是外在的焊点缺陷;激光/红外线组合式检测系统、X射线检测系统可以分析焊点微米级水平的缺陷,能找出其他检测所不能可靠地发现的缺陷,包括空洞、焊点形状差和冷焊锡点等;另外,X射线检测系统能一次测试单面或双面电路,准确地定位缺陷,获取工艺参数,例如锡膏厚度等.     

Roles of rhenium diimine complexes as metal‐ion probes and photosensitizers in functional polyurethanes

Polyurethanes incorporated with rhenium diimine complexes were synthesized. The polymers exhibited interesting morphologies and solution properties. Results from gel permeation chromatography suggested the formation of polymer aggregates in solutions. The polymers could act as probes for metal ions. The addition of metal ions to polymer solutions led to significant changes in the electronic absorption properties of the polymer solutions. This was attributed to the interactions between the polyether moieties and metal ions. The metal complexes could also act as efficient photosensitizers. After doping with charge‐transport viologens, the photoconductivity of the polymers was greatly enhanced. The experimental quantum efficiency was simulated with Onsager's theory. The thermalization distances and the primary yields were typically 12–14 Å and 10^?3, respectively. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 1708–1715, 2003