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31.
Tipton C.W. Bayne S.B. Griffin T.E. Scozzie C.J. Geil B. Agarwal A.K. Richmond J. 《Electron Device Letters, IEEE》2002,23(4):194-196
This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices 相似文献
32.
C.J. Wu 《Applied Acoustics》2002,63(10):1143-1154
This work formulates the double-layer structural-acoustic coupling problem for cylindrical shell by using a combination of the wave-number domain approach (WDA) and the boundary integral equation (BIE). Expressions for the spectral radial velocity of the outer surface of a finite fluid-filled/submerged (FFS) cylindrical thin shell are formulated by means of the transfer matrix equation in wave-number domain. It is shown that the spectral variables on the inner surface of the shell are related to those on the outer surface of the shell. The far field sound radiation from this kind of shell is numerically evaluated for various fluid cases. An experimental verification is performed, and a good correlation between the theoretical results and the experimental results shows that the theoretical study work in this paper is correct. 相似文献
33.
I. J. Lozada J. C. Osorio D. V. Griffiths M. Cerrolaza 《Numerical Methods for Partial Differential Equations》2006,22(2):296-316
The semi‐analytical integration of an 8‐node plane strain finite element stiffness matrix is presented in this work. The element is assumed to be super‐parametric, having straight sides. Before carrying out the integration, the integral expressions are classified into several groups, thus avoiding duplication of calculations. Symbolic manipulation and integration is used to obtain the basic formulae to evaluate the stiffness matrix. Then, the resulting expressions are postprocessed, optimized, and simplified in order to reduce the computation time. Maple symbolic‐manipulation software was used to generate the closed expressions and to develop the corresponding Fortran code. Comparisons between semi‐analytical integration and numerical integration were made. It was demonstrated that semi‐analytical integration required less CPU time than conventional numerical integration (using Gaussian‐Legendre quadrature) to obtain the stiffness matrix. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq, 2006 相似文献
34.
Su M.F. Reda Taha M.M. Christodoulou C.G. El Kady I. 《Photonics Technology Letters, IEEE》2008,20(10):761-763
Processing methods used in photonics and nanotechnology possess many limitations restricting their application areas such as high cost, inability to produce fine details, problems with scalability, and long processing time. Proximity field nanopatterning is a lithography method which surpasses these limitations. By using interference patterns produced by a two-dimensional phase mask, the technique is able to generate a submicron detailed exposure on a millimeter-size slab of light sensitive photopolymer, which is then developed like a photographic plate to reveal three-dimensional interference patterns from the phase mask. While it is possible to use simulations to obtain the interference patterns produced by a phase mask, realizing the mask dimensions necessary for producing a desired interference pattern is analytically challenging due to the intricacies of light interactions involved in producing the final interference pattern. An alternative method is to iteratively optimize the phase mask until the interference patterns obtained converge to the desired pattern. However, depending on the optimization technique used, one either risks a significant probability of failure or requires a prohibitive number of iterations. We argue that an optimization technique that is to take advantage of the physics of the problem using machine learning methods (here fuzzy learning) can lead to competent mask design. This technique is described in this letter. 相似文献
35.
A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC 总被引:1,自引:0,他引:1
Min Gyu Kim Gil-Cho Ahn Hanumolu P.K. Sang-Hyeon Lee Sang-Ho Kim Seung-Bin You Jae-Whui Kim Temes G.C. Un-Ku Moon 《Solid-State Circuits, IEEE Journal of》2008,43(5):1195-1206
A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation. 相似文献
36.
37.
X Y Liu C J Li 《Science in China. Series B, Chemistry, life sciences & earth sciences》1989,32(10):1215-1223
To further evaluate the causality between endogenous pyrogen (EP)-induced fever and cyclic adenosine-3',5'-monophosphate (cyclic AMP) level, the effects of sodium salicylate (SS) on the febrile response and increased levels of cyclic AMP in both cerebrospinal fluid (c.s.f.) and plasma during EP-induced fever in rabbits were observed. The results suggest that cyclic AMP is probably involved in the central mediation of EP-induced fever and that increased concentration of cyclic AMP in c.s.f. associated with EP-induced fever is not the result of temperature elevation but appears to be caused by the increased synthesis in the central nervous system. In addition it is confirmed that blood is impossibly a contributory source of increased cyclic AMP in c.s.f. during EP fever, and that SS may act subsequent to the increase in cyclic AMP. 相似文献
38.
Sarto M.S. Voti R.L. Sarto F. Larciprete M.C. 《Electromagnetic Compatibility, IEEE Transactions on》2005,47(3):602-611
New nanolayered coatings are designed and deposited on flexible plastic substrate having the thickness of 100 /spl mu/m, in order to realize lightweight ultrathin transparent shielding foils. The structure of the coating is optimized considering three figures of merit: the average transmittance in the visible range for normal incidence, the normalized average transmittance for oblique incidence at 550 nm, and the transmittance quality factor. The nanotechnology exploited for the deposition of the transparent metals is the dual ion beam sputtering. Tests of durability, optical transmission, and shielding effectiveness demonstrate that the film has a high adhesion under mechanical solicitation, high resistance against aging, peak transmittance in the visible range higher than 70%, omnidirectional properties in the range 0/spl deg/-60/spl deg/, and shielding effectiveness of 40 dB up to 6 GHz. 相似文献
39.
K. C. Kumara Swamy E. Balaraman M. Phani Pavan N. N. Bhuvan Kumar K. Praveen Kumar N. Satish Kumar 《Journal of Chemical Sciences》2006,118(6):495-501
The diversity of products in the reaction of diethyl azodicarboxylate (DEAD)/diisopropyl azodicarboxylate (DIAD) and activated
acetylenes with PIII compounds bearing oxygen or nitrogen substituents is discussed. New findings that are useful in understanding the nature
of intermediates involved in the Mitsunobu reaction are highlighted. X-ray structures of two new compounds (2-t-Bu-4-MeC6H3O)P (μ-N-t-Bu)2P+[(NH-t-Bu)N[(CO2]-i-Pr)(HNCO2-i-Pr)]](Cl-)(2-t-Bu-4-MeC6H3OH)(23)and [CH2(6-t-Bu-4-Me-C6H2O)2P(O)C(CO2Me)C-(CO2Me)CClNC(O)Cl] (33) are also reported. The structure of23 is close to one of the intermediates proposed in the Mitsunobu reaction. 相似文献
40.
Seo K. Heiblum M. Knoedler C.M. Oh J.E. Pamulapati J. Bhattacharya P. 《Electron Device Letters, IEEE》1989,10(2):73-75
A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In 0.12Ga0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In0.12Ga0.88As was estimated to be about 380 meV 相似文献