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101.
Bernd Stöckel 《Journal of Infrared, Millimeter and Terahertz Waves》1993,14(10):2131-2148
A two beam interferometer in the Martin-Puplett configuration is used to determine the complex dielectric constant at 300 GHz of teflon, TPX-plastics, SPECTRALON and paraffin waxes with melting temperatures of 48° C and 72° C, respectively. The design of the quasi-optical system leads to a constant beam diameter at the power detector independent of path delay and frequency. The power detector signal is recorded not only along one period but over about 50 periods. A spectrum estimation routine allows to determine more exactly amplitude and phase angle of the signal. A basic problem is noticed: imperfect detector and source match cause harmonic distortion of the power detector signal. The effects on processing the loss tangent and the invalidation are shown. Finally loss tangent and dielectric constant are determined indirectly by optimizing an equivalent microwave circuit using a commercial available microwave design system to take multiple reflections and losses in consideration. 相似文献
102.
This research extends previous work with dynamic models to manage groundwater quality by using the consumptive nitrate use rate instead of the nitrate application rate. The analysis indicates that misspecification results in overestimation of economic benefits, and supra-optimum nitrogen fertilizer application rates and groundwater nitrate stocks at a steady state. 相似文献
103.
Using high-NA step index optical fibers, we show, theoretically, that large-bandwidth second-harmonic generation and sum frequency generation can be achieved at conversion frequencies in the visible region of the spectrum 相似文献
104.
J Z Hu R J Pugmire A M Orendt D M Grant C Ye 《Solid state nuclear magnetic resonance》1992,1(4):185-195
Taking advantage of the long 13C T1 values generally encountered in solids, selective saturation and inversion of more than one resonance in 13C CP/MAS experiments can be achieved by sequentially applying several DANTE pulse sequences centered at different transmitter frequency offsets. A new selective saturation pulse sequence is introduced composed of a series of 90 degrees DANTE sequences separated by interrupted decoupling periods during which the selected resonance is destroyed. Applications of this method, including the simplification of the measurement of the principal values of the 13C chemical shift tensor under slow MAS conditions, are described. The determination of the aromaticity of coal using a relatively slow MAS rate is also described. 相似文献
105.
Silver nitrate-acetonitrile and π iodine-benzene complexes in thermotropic liquid crystals have been studied by 1H, 2H, and 13C NMR spectroscopy and by optical microscopy. Evidence for at least two silver complexes in each liquid crystal is presented. 相似文献
106.
The purpose of this paper is to study the relationship between the oxygen concentration and brightness degradation in ZnS:TbOF green thin-film electroluminescent (EL) devices. The characteristics including crystallinity, optical, and electrical properties were discussed. The brightness-voltage (B-V) measurement results shelved that with higher oxygen-content in ZnS:TbOF phosphor layer, lower brightness was measured. It was consistent with the poor crystallinity, worse photoluminescent intensity, and easier to get moisture in the oxygen-rich (O/Tb>1) phosphor film. Furthermore, deep level transient spectroscopy (DLTS) measurements identified that when the O/Tb ratio was greater than 1, the oxygen-related deep hole traps EH1 and/or EH2 could be detected in the ZnS:TbOF phosphor layer. These E H1 and/or EH2 traps were believed to be the main killers for the brightness of the device since they capture most of the holes from the generated electron-hole pairs. This evidence strongly supports that the modified energy transfer model is more dominant than direct impact excitation during the luminescent process 相似文献
107.
The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed 相似文献
108.
109.
Gunapala S.D. Bundara S.V. Liu J.K. Winn Hong Mani Sundaram Maker P.D. Muller R.E. Shott C.A. Carralejo R. 《Electron Devices, IEEE Transactions on》1998,45(9):1890-1895
A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature 相似文献
110.
A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's). The reasons behind this unwanted phenomenon are fully clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The existence of multi-value equilibrium points in model's constitutive equations is shown to be the necessary condition for the collapse of current gain to appear. For a N-finger device, N different patterns of collapse exist. The criterion to select the global stable pattern is given. The method has been used to predict the collapse in AlGaAs/GaAs HBT's and the agreement is excellent. The method also predicts that the collapse can happen far earlier than is normally expected in multi-finger high-power devices. The influence of ballasting resistance and thermal resistance is also investigated 相似文献