Testing for additivity with B-splines

Regression splines are often used for fitting nonparametric functions, and they work especially well for additivity models. In this paper, we consider two simple tests of additivity: an adaptation of Tukey's one degree of freedom test and a nonparametric version of Rao's score test. While the Tukey-type test can detect most forms of the local non-additivity at the parametric rate of O(n-1/2), the score test is consistent for all alternative at a nonparametric rate. The asymptotic distribution of these test statistics is derived under both the null and local alternative hypotheses. A simulation study is conducted to compare their finite-sample performances with some existing kernel-based tests. The score test is found to have a good overall performance.     

钒酸钇晶体及其在光纤通信中的应用

钒酸钇（YVO4）晶体具有良好的机械和物理特性，近年在光纤通信器件制造生产中得到了广泛的应用。本文介绍了基于YVO4晶体为材料的隔离器、环行器和交叉波分复用的功能及其原理结构。     

Global error bound for convex inclusion problems

The existence of global error bound for convex inclusion problems is discussed in this paper, including pointwise global error bound and uniform global error bound. The existence of uniform global error bound has been carefully studied in Burke and Tseng (SIAM J. Optim. 6(2), 265–282, 1996) which unifies and extends many existing results. Our results on the uniform global error bound (see Theorem 3.2) generalize Theorem 9 in Burke and Tseng (1996) by weakening the constraint qualification and by widening the varying range of the parameter. As an application, the existence of global error bound for convex multifunctions is also discussed.     

基于约束优化的联想记忆模型学习算法

本文提出了一种对称互连神经元网络的学习策略,利用全局约束优化方法确定连接权。优化过程采用了梯度下降技术。这种学习算法可以保证训练样本成为系统的稳定吸引子,并且具有优化意义上的最大吸引域。本文讨论了网络的存储容量,训练样本的渐近稳定性和吸引域大小。计算机实验结果说明了学习算法的优越性。     

Fabrication of bamboo-shaped GaN nanorods

Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN. Received: 8 January 2001 / Accepted: 28 April 2001 / Published online: 20 December 2001     

X441对数放大器的原理及其应用

本文主要介绍X441单片对数放大器的基本原理和应用,并列举了一些具体应用电路。     

The moire topography based on optical logic operation

The optical logic-operated moire,which is proposed on the basis of optical logicoperation,is a new method to obtain specific moire beat pattern.Its advantages lie in the ca-pability to select carrier-free,sharpened fringes with high contrast.The experimental methodand results of the application of the optical logic-operared moire in moire topography are pre-sented in this paper.     

硫酰胺的快速分析（Ⅱ） 

硫酰胺生产过程中副产的大量氯化铵要干扰硫酰胺的测定，采用四苯硼钠将全部氯化铵呈沉淀析出，再用次溴酸钠把滤液中的硫酰胺分解成氮气，测其体积，计算出硫酰胺的含量。对样品进行测定的结果表明，该法重现性好、准确度高、分析周期在３５ｍｉｎ内，相对误差在±１％以内。     

PZT铁电薄膜的制备及电学性能研究

使用硝酸锆作锆源的溶胶－凝胶方法制备ＰＺＴ铁电薄膜。他们的电学性能被测试包括电滞回线，电流Ｉ（ｔ）特性，漏电流，矫顽场疲劳和老化。测到的ＰＺＴ薄膜剩余极化８．２μＣ／ｃｍ~２，矫顽场６８ｋＶ／ｃｍ．簿膜的寿命可超过１０~（１１）周期。     

Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS