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981.
S K Samanta U C Gupta R K Sharma 《The Journal of the Operational Research Society》2007,58(3):368-377
This paper investigates a discrete-time single-server finite-buffer queueing system with multiple vacations in which arrivals occur according to a discrete-time renewal process. Service and vacation times are mutually independent and geometrically distributed. We obtain steady-state system length distributions at prearrival, arbitrary and outside observer's observation epochs under the late arrival system with delayed access and early arrival system. The analysis of actual waiting-time for both the systems has also been carried out. The model has potential application in high-speed computer network, digital communication systems and other related areas. 相似文献
982.
M.K. Gupta Vijay Gupta Manoj Kumar 《Journal of Mathematical Analysis and Applications》2007,330(2):799-816
In the present paper we introduce a new family of linear positive operators and study some direct and inverse results in simultaneous approximation. 相似文献
983.
Streit D.C. Hafizi M.E. Umemoto D.K. Velebir J.R. Tran L.T. Oki A.K. Kim M.E. Wang S.K. Kim C.W. Sadwick L.P. Hwu R.J. 《Electron Device Letters, IEEE》1991,12(5):194-196
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
984.
A radix-8 wafer scale FFT processor 总被引:2,自引:0,他引:2
Earl E. Swartzlander Jr. Vijay K. Jain Hiroomi Hikawa 《The Journal of VLSI Signal Processing》1992,4(2-3):165-176
Wafer Scale Integration promises radical improvements in the performance of digital signal processing systems. This paper describes the design of a radix-8 systolic (pipeline) fast Fourier transform processor for implementation with wafer scale integration. By the use of the radix-8 FFT butterfly wafer that is currently under development, continuous data rates of 160 MSPS are anticipated for FFTs of up to 4096 points with 16-bit fixed point data. 相似文献
985.
A special poster session was run during the 18th International Symposium on Shock Waves, held on July 21 – 26, 1991, in Sendai, Japan. The purpose of this session was to compare various CFD schemes which are useful for simulating shock wave phenomena. A 2-D planar shock wave diffraction over a 90 degree sharp corner was selected as a bench mark problem. The problem specification and the output format are described below. Experimental outputs for the close flow conditions to the computational ones were also called for. Twenty six poster presentations were made at this session and the majority of the posters reflected a standard of excellence that warrants publication in the Shock Waves journal. Therefore these results are reproduced here. However, since there is a limit on the available page numbers, it was not possible to publish all the posters that were presented at the special poster session. We express our sincere thanks to all the participants in this session. 相似文献
986.
Tamaki Y. Shiba T. Kure T. Ohyu K. Nakamura T. 《Electron Devices, IEEE Transactions on》1992,39(6):1387-1391
A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3-μm bipolar LSIs. Fabricated 0.5-μm U-SICOS (U-groove isolated sidewall base contact structure) transistors are 44 μm2, and they have an isolation width of 2.0 μm, a minimum emitter width of 0.2 μm, a maximum cutoff frequency (f T) of 50 GHz, and a minimum ECL gate delay time of 27 ps. The key points for fabricating high-performance 0.3-μm bipolar LSIs are the control of the graft base depth and the control of the interfacial layer between emitter poly-Si and single-Si. The importance of a tradeoff relation between f T and base resistance is also discussed 相似文献
987.
K. -J. Berg A. Berger H. Hofmeister 《Zeitschrift für Physik D Atoms, Molecules and Clusters》1991,20(1):309-311
Small spherical silver particles in a surface layer of commercial flat glass were produced by means of sodium-silver ion exchange. In each volume element of the layer there is a Gaussian distribution of the particle diameters. The mean diameter increases with penetration depth. Within one individual sample it can vary from 4.5 nm immediately at the glass surface up to more than 50 nm at the end of the layer. Due to a special preparation technique the results were gained by microspectrophotometric measurements as well as by investigations carried out with the transmission electron microscope and the electron-probe microanalyzer on one and the same sample always as function of the penetration depth. 相似文献
988.
Zupac D. Baum K.W. Kosier S.L. Schrimpf R.D. Galloway K.F. 《Electron Device Letters, IEEE》1991,12(10):546-549
The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain 相似文献
989.
Zboril R. Mashlan M. Machala L. Walla J. Barcova K. Martinec P. 《Hyperfine Interactions》2004,156(1-4):403-410
Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and... 相似文献
990.
The present paper reports the dislocation unpinning model of acoustic emission (AE) from alkali halide crystals. Equations
are derived for the strain dependence of the transient AE pulse rate, peak value of the AE pulse rate and the total number
of AE pulse emitted. It is found that the AE pulse rate should be maximum for a particular strain of the crystals. The peak
value of the AE pulse rate should depend on the volume and strain rate of the crystals, and also on the pinning time of dislocations.
Since the pinning time of dislocations decreases with increasing strain rate, the AE pulse rate should be weakly dependent
on the strain rate of the crystals. The total number of AE should increase linearly with deformation and then it should attain
a saturation value for the large deformation. By measuring the strain dependence of the AE pulse rate at a fixed strain rate,
the time constantτ
s for surface annihilation of dislocations and the pinning timeτ
p of the dislocations can be determined. A good agreement is found between the theoretical and experimental results related
to the AE from alkali halide crystals. 相似文献